SMBJ5.0A thru SMBJ188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
DO-214AA (SMB J-Bend)
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
(bi-directional)
V
BR
(uni-directional)
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 231 V
6.4 V to 231 V
5.0 V to 188 V
600 W
100 A
150 °C
Uni-directional, bi-directional
DO-214AA (SMBJ)
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Revision: 06-Feb-14
Document Number: 89284
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188CA
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
MAX.
6.40
7.07
6.67
7.37
7.22
7.98
7.78
8.60
8.33
9.21
8.89
9.83
9.44
10.4
10.0
11.1
11.1
12.3
12.2
13.5
13.3
14.7
14.4
15.9
15.6
17.2
16.7
18.5
17.8
19.7
18.9
20.9
20.0
22.1
22.2
24.5
24.4
26.9
26.7
29.5
28.9
31.9
31.1
34.4
33.3
36.8
36.7
40.6
40.0
44.2
44.4
49.1
47.8
52.8
50.0
55.3
53.3
58.9
56.7
62.7
60.0
66.3
64.4
71.2
66.7
73.7
71.1
78.6
77.8
86.0
83.3
92.1
86.7
95.8
94.4
104
100
111
111
123
122
135
133
147
144
159
167
185
178
197
189
209
209
231
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)SMBJ5.0A
(5)
(+)SMBJ6.0A
(+)SMBJ6.5A
(+)SMBJ7.0A
(+)SMBJ7.5A
(+)SMBJ8.0A
(+)SMBJ8.5A
(+)SMBJ9.0A
(+)SMBJ10A
(+)SMBJ11A
(+)SMBJ12A
(+)SMBJ13A
(+)SMBJ14A
(+)SMBJ15A
(+)SMBJ16A
(+)SMBJ17A
(+)SMBJ18A
(+)SMBJ20A
(+)SMBJ22A
(+)SMBJ24A
(+)SMBJ26A
(+)SMBJ28A
(+)SMBJ30A
(+)SMBJ33A
(+)SMBJ36A
(+)SMBJ40A
(+)SMBJ43A
(+)SMBJ45A
(+)SMBJ48A
(+)SMBJ51A
(+)SMBJ54A
(+)SMBJ58A
(+)SMBJ60A
(+)SMBJ64A
(+)SMBJ70A
(+)SMBJ75A
(+)SMBJ78A
(+)SMBJ85A
(+)SMBJ90A
(+)SMBJ100A
(+)SMBJ110A
(+)SMBJ120A
(+)SMBJ130A
(+)SMBJ150A
(+)SMBJ160A
(+)SMBJ170A
SMBJ188A
DEVICE MARKING
CODE
UNI
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
BI
KE
KG
AK
KM
AP
AR
AT
AV
AX
KZ
BE
LG
BK
BM
LM
LR
BT
LV
BX
BZ
CE
MG
CK
CM
CP
CR
CT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
PE
PG
PK
PM
PP
PR
PS
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
800
800
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
MAXIMUM
PEAK PULSE CLAMPING
SURGE
VOLTAGE AT
CURRENT
I
PPM
I
PPM
(A)
(2)
V
C
(V)
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.9
24.6
23.1
21.7
20.5
18.5
16.9
15.4
14.3
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.8
7.3
6.9
6.4
6.2
5.8
5.3
5.0
4.8
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
2.0
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
328
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4)
All terms and symbols are consistent with ANSI/IEEE C62.35
(5)
For the bi-directional SMBJ5.0CA, the maximum V
BR
is 7.25 V
(6)
V = 3.5 V max. at I = 50 A (uni-directional only)
F
F
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 06-Feb-14
Document Number: 89284
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188CA
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
(1)
R
JL
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBJ5.0A-M3/52
SMBJ5.0A-M3/5B
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10 µs
Peak Value
I
PPM
10
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
6000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
V
R
, Measured at Stand-Off
Voltage V
WM
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
P-P
100
200
25
0
0
25
50
75
100
125
150
175
200
10
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 06-Feb-14
Document Number: 89284
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMBJ5.0A thru SMBJ188CA
www.vishay.com
Vishay General Semiconductor
200
100
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
0.001
10
0.01
0.1
1.0
10
100
1000
1
10
100
t
p
- Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Revision: 06-Feb-14
Document Number: 89284
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 13-Jun-16
1
Document Number: 91000