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SMBJ Series

Transient Voltage Suppressors

PRODUCT SUMMARY

Stand-off Voltage ratings from 5.0V to 440V

Peak pulse power 600W in SMB surface-mount package

FEATURES

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

Low profile package with built-in strain relief for surface-mount

Glass passivated junction

Low incremental surge resistance, excellent clamping capability

Peak pulse power capability of 600W with a 10/1000us waveform,

repetition rate (duty cycle): 0.01%

Very fast response time

High temperature soldering guaranteed:

260°C for 10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip

Terminals: Matte-Sn plated, solderable per MIL-STD-750,

Method 2026

Polarity: For uni-directional types the band denotes the cathode, which

is positive with respect to the anode under normal TVS operation.

Mounting position: Any

Weight: 0.003oz., 0.093g

Pb-free; RoHS-compliant

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.

MAXIMUM RATINGS

Rating at 25°C ambient temperature unless otherwise specified.

Parameter

Peak pulse power dissipation with

a 10/1000

s waveform

(1,2)

(see Fig. 1)

Peak pulse current with a 10/1000

s waveform

(1)

Peak forward surge current, 8.3ms single half sine-wave

uni-directional only

(2)

Typical thermal resistance, junction to ambient

(3)

Typical thermal resistance, junction to lead

Operating junction and storage temperature range

Symbol

PPM

FSM

, T

STG

Value

Minimum 600

See Next Table

100

-55 to +150

Unit

°C/W

°C

Notes:

1. Non-repetitive current pulse, per Fig. 3 and derated above T

=25°C per Fig. 2.

2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal

3. Mounted on minimum recommended pad layout

9/21/2006 Rev.4.01

www.SiliconStandard.com

1 of 4

SMBJ Series

ELECTRICAL PARAMETERS

At 25°C ambient temperature unless otherwise specified. V

=3.5V at I

=25A (uni-directional only)

Device marking

co d e

Device Type

SMBJ5.0

SMBJ5.0A

SMBJ6.0

SMBJ6.0A

SMBJ6.5

SMBJ6.5A

SMBJ7.0

SMBJ7.0A

SMBJ7.5

SMBJ7.5A

SMBJ8.0

SMBJ8.0A

SMBJ8.5

SMBJ8.5A

SMBJ9.0

SMBJ9.0A

SMBJ10

SMBJ10A

SMBJ11

SMBJ11A

SMBJ12

SMBJ12A

SMBJ13

SMBJ13A

SMBJ14

SMBJ14A

SMBJ15

SMBJ15A

SMBJ16

SMBJ16A

SMBJ17

SMBJ17A

SMBJ18

SMBJ18A

SMBJ20

SMBJ20A

SMBJ22

SMBJ22A

SMBJ24

SMBJ24A

SMBJ26

SMBJ26A

SMBJ28

SMBJ28A

SMBJ30

SMBJ30A

(5)

Breakdow n voltage

(BR)

(Volts)

(1)

Min.

6.40

6.67

7.22

7.78

8.33

8.89

9.44

10.0

11.1

12.2

13.3

14.4

15.6

16.7

17.8

18.9

20.0

22.2

24.4

26.7

28.9

31.1

33.3

Max.

7.82

7.07

8.15

7.37

8.82

7.98

9.51

8.60

10.2

9.21

10.9

9.83

11.5

10.4

12.2

11.1

13.6

12.3

14.9

13.5

16.3

14.7

17.6

15.9

19.1

17.2

20.4

18.5

21.8

19.7

23.1

20.9

24.4

22.1

27.1

24.5

29.8

26.9

32.6

29.5

35.3

31.9

38.0

34.4

40.7

36.8

UNI

Test

current

at I

(mA)

1.0

Stand-off

voltage

(Volts)

5.0

6.0

6.5

7.0

7.5

8.0

8.5

9.0

Maximum

reverse

leakage

at V

D(3)

(uA)

800

500

200

100

5.0

1.0

Maximum

peak pulse

surge

current

PPM(2)

(A)

62.5

65.2

52.6

58.3

48.8

53.6

45.1

50.0

42.0

46.5

40.0

44.1

37.7

41.7

35.5

39.0

31.9

35.3

29.9

33.0

27.3

30.2

25.2

27.9

23.3

25.9

22.3

24.6

20.8

23.1

19.7

21.7

18.6

20.5

16.8

18.5

15.2

16.9

14.0

15.4

12.9

14.3

12.0

13.2

11.2

12.4

Maximum

clamping

voltage

at I

PPM

(Volts)

9.6

9.2

11.4

10.3

12.3

11.2

13.3

12.0

14.3

12.9

15.0

13.6

15.9

14.4

16.9

15.4

18.8

17.0

20.1

18.2

22.0

19.9

23.8

21.5

25.8

23.2

26.9

24.4

28.8

26.0

30.5

27.6

32.2

29.2

35.8

32.4

39.4

35.5

43.0

38.9

46.6

42.1

50.0

45.4

53.5

48.4

Notes:

1. V

(BR)

measured after I

applied for 300us square wave pulse or equivalent

2. Surge current waveform per Fig. 3 and derate per Fig. 2

3. For bi-directional types having V

of 10 Volts and less, the I

limit is doubled

4. All terms and symbols are consistent with ANSI/IEEE C62.35

5. For the bidirectional SMBJ5.0CA, the maximum V

(BR)

is 7.25V.

9/21/2006 Rev.4.01

www.SiliconStandard.com

2 of 4

SMBJ Series

ELECTRICAL PARAMETERS

At 25°C ambient temperature unless otherwise specified. V

=3.5V at I

=25A (uni-directional only)

Breakdow n voltage

(BR)

(Volts)

(1)

Min.

36.7

40.0

44.4

47.8

50.0

53.3

56.7

60.0

64.4

66.7

71.1

77.8

83.3

86.7

94.4

100

111

122

133

144

167

178

189

201

224

246

279

335

391

447

492

Max.

44.9

40.6

48.9

44.2

54.3

49.1

58.4

52.8

61.1

55.3

65.1

58.9

69.3

62.7

73.3

66.3

78.7

71.2

81.5

73.7

86.9

78.6

95.1

86.0

102

92.1

106

95.8

115

104

122

111

136

123

149

135

163

147

176

159

204

185

218

197

231

209

222

247

272

309

371

432

494

543

Maximum

reverse

leakage

at V

D(3)

(uA)

1.0

Maximum

peak pulse

surge

current

PPM(2)

(A)

10.2

11.3

9.3

10.3

8.4

9.3

7.8

8.6

7.5

8.3

7.0

7.8

6.6

7.3

6.2

6.9

5.8

6.4

5.6

6.2

5.3

5.8

4.8

5.3

4.5

5.0

4.3

4.8

4.0

4.4

3.8

4.1

3.4

3.7

3.1

3.4

2.8

3.1

2.6

2.9

2.2

2.5

2.1

2.3

2.0

2.2

2.1

1.9

1.7

1.5

1.3

1.1

0.9

Maximum

clamping

voltage

at I

PPM

(Volts)

59.0

53.3

64.3

58.1

71.4

64.5

76.7

69.4

80.3

72.7

85.5

77.4

91.1

82.4

96.3

87.1

103

93.6

107

96.8

114

103

125

113

134

121

139

126

151

137

160

146

179

162

196

177

214

193

231

209

268

243

287

259

304

275

292

324

356

405

486

567

648

713

Device marking

co d e

Device type

SMBJ33

SMBJ33A

SMBJ36

SMBJ36A

SMBJ40

SMBJ40A

SMBJ43

SMBJ43A

SMBJ45

SMBJ45A

SMBJ48

SMBJ48A

SMBJ51

SMBJ51A

SMBJ54

SMBJ54A

SMBJ58

SMBJ58A

SMBJ60

SMBJ60A

SMBJ64

SMBJ64A

SMBJ70

SMBJ70A

SMBJ75

SMBJ75A

SMBJ78

SMBJ78A

SMBJ85

SMBJ85A

SMBJ90

SMBJ90A

SMBJ100

SMBJ100A

SMBJ110

SMBJ110A

SMBJ120

SMBJ120A

SMBJ130

SMBJ130A

SMBJ150

SMBJ150A

SMBJ160

SMBJ160A

SMBJ170

SMBJ170A

SMBJ180A

SMBJ200A

SMBJ220A

SMBJ250A

SMBJ300A

SMBJ350A

SMBJ400A

SMBJ440A

UNI

Test

current

at I

(mA)

1.0

Stand-off

voltage

(Volts)

100

110

120

130

150

160

170

180

200

220

250

300

350

400

440

Notes:

1. V

(BR)

measured after I

applied for 300us square wave pulse or equivalent

2. Surge current waveform per Fig. 3 and derate per Fig. 2

3. For bi-directional types having V

of 10 Volts and less, the I

limit is doubled

4. All terms and symbols are consistent with ANSI/IEEE C62.35

5. For parts without A, the V

is +10%

9/21/2006 Rev.4.01

www.SiliconStandard.com

3 of 4

SMBJ Series

RATINGS AND CHARACTERISTIC CURVES

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no

guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no

responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its

use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including

without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to

the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of

Silicon Standard Corporation or any third parties.

9/21/2006 Rev.4.01

www.SiliconStandard.com

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