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SMCG6.0E3/TR

Trans Voltage Suppressor Diode, 1500W, 6V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Microsemi
包装说明
R-PDSO-G2
Reach Compliance Code
compliant
ECCN代码
EAR99
最大击穿电压
8.15 V
最小击穿电压
6.67 V
击穿电压标称值
7.41 V
最大钳位电压
11.4 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-215AB
JESD-30 代码
R-PDSO-G2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1.56 W
最大重复峰值反向电压
6 V
表面贴装
YES
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SMCG5.0 – SMCG170CA,
SMCJ5.0 – SMCJ170CA
Available
Surface Mount 1500 Watt
Transient Voltage Suppressor
DESCRIPTION
The SMC 5.0 through SMC 170A series of 1500 watt Transient Voltage Suppressors (TVSs)
protects a variety of voltage-sensitive components. The gull-wing design (SMCG) in the DO-215AB
package allows for visible solder connections. The J-bend design (SMCJ) in the DO-214AB
package allows for greater PC board mounting density. Selections include unidirectional and
bidirectional as well as RoHS compliant versions. They can protect from secondary lightning
effects per IEC61000-4-5 and class levels defined herein, or for inductive switching environments
and induced RF protection. Since their response time is virtually instantaneous, they can also be
used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Microsemi also offers
numerous other products to meet higher and lower power voltage regulation applications.
DO-215AB
(SMCG) Package
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Economical surface mount design with gull-wing or J-bend terminations.
Wide leads assure a large surface contact for good heat dissipation and a low resistance path for
surge current flow to ground.
Available in both unidirectional and bidirectional construction.
Designed specifically for transient voltage suppression.
Ideal for protecting sensitive components such as integrated circuits and MOS devices.
Moisture classification is “Level 1” with no dry pack required per IPC/JEDEC J-STD-020B.
RoHS compliant versions available.
Axial-lead equivalent packages for thru-hole mounting are available as 1.5KE6.8A to 1.5KE200CA
or 1N6267 through 1N6303A and 1N5908 (contact Microsemi for other surface mount options).
DO-214AB
(SMCJ) Package
NOTE: All SMC series are
equivalent to prior SMM package
identifications.
Also available in:
Hi-Rel
Level
MSMCG(J)5.0A –
MXLSMCG(J)170CAe3
APPLICATIONS / BENEFITS
Selections for 5.0 to 170 volts standoff voltages (V
WM
).
Tolerance levels of 5% or 10% available.
Protection from switching transients and induced RF.
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 ohms source impedance:
Class 1: SMC 5.0 to SMC 170A or CA
Class 2: SMC 5.0 to SMC 150A or CA
Class 3: SMC 5.0 to SMC 75A or CA
Class 4: SMC 5.0 to SMC 36A or CA
Secondary lightning protection per IEC61000-4-5 with 12 ohms source impedance:
Class 1: SMC 5.0 to SMC 90A or CA
Class 2: SMC 5.0 to SMC 45A or CA
Class 3: SMC 5.0 to SMC 24A or CA
Class 4: SMC 5.0 to SMC 11A or CA
Secondary lightning protection per IEC61000-4-5 with 2 ohms source impedance:
Class 2: SMC 5.0 to SMC 22A or CA
Class 3: SMC 5.0 to SMC 10A or CA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01116, Rev. A (3/27/13)
©2013 Microsemi Corporation
Page 1 of 7
SMCG5.0 – SMCG170CA,
SMCJ5.0 – SMCJ170CA
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead
(1)
Thermal Resistance Junction-to-Ambient
Peak Pulse Power dissipation @ 25 ºC (at 10/1000
µs,
see
Figures 1, 2, and 3)
Impulse Repetition Rate (duty factor)
t
clamping
(0 volts to V
(BR)
min.)
Unidirectional
Bidirectional
Rated Average Power Dissipation
T
L
= +30 ºC
T
A
= +25 ºC
(2)
Maximum Forward Surge Current
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJL
R
ӨJA
P
PP
df
Value
-65 to +150
20
80
1500
0.01
<100
<5
6
(1)
1.56
200
260
Unit
ºC
ºC/W
ºC/W
W
%
ps
ns
W
A (pk)
o
C
P
M(AV)
I
FSM
T
SP
Notes:
1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see
last page).
2. Peak impulse of 8.3 ms half-sine wave at 25 ºC (unidirectional only).
MECHANICAL and PACKAGING
CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026.
MARKING: Part number without “SM” prefix (e.g. C5.0A, C5.0CA, 5.0Ae3, C5.0CAe3, C36A, C36CA, C36CAe3, etc.).
POLARITY: Cathode indicated by band. No marking on bi-directional devices.
TAPE & REEL option: Standard per EIA-481-2 with 16 mm tape (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.25 grams.
See
package dimensions
on last page.
PART NOMENCLATURE
SM
Surface Mount Package
1500 W Power Level
Gull-Wing Lead Form
G = Gull-wing
J = J-bend
Reverse Stand-Off Voltage
(see
Electrical
Characteristics
table)
C
G
5.0
C
A
e3
RoHS Compliance
e3 = RoHS Compliant
Blank = non-RoHS Compliant
Tolerance Level
A = 5% tolerance
Blank = 10% tolerance
Uni/Bidirectional
C = Bidirectional
Blank = Unidirectional
RF01116, Rev. A (3/27/13)
©2013 Microsemi Corporation
Page 2 of 7
SMCG5.0 – SMCG170CA,
SMCJ5.0 – SMCJ170CA
SYMBOLS & DEFINITIONS
Definition
Breakdown Current: The current used for measuring breakdown voltage V
(BR).
Standby Current: The current at the rated standoff voltage (V
WM
).
Forward Current: The forward current dc value, no alternating component.
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
Peak Impulse Current: The peak current during the impulse.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
Clamping Voltage: The maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse
conditions.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range. This is
also referred to as standoff voltage.
Symbol
I
(BR)
I
D
I
F
I
O
I
PP
P
PP
V
C
V
(BR)
V
WM
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated
REVERSE
STAND-OFF
VOLTAGE
MICROSEMI PART NUMBER
Gull-Wing
SMCG5.0
SMCG5.0A
SMCG6.0
SMCG6.0A
SMCG6.5
SMCG6.5A
SMCG7.0
SMCG7.0A
SMCG7.5
SMCG7.5A
SMCG8.0
SMCG8.0A
SMCG8.5
SMCG8.5A
SMCG9.0
SMCG9.0A
SMCG10
SMCG10A
SMCG11
SMCG11A
SMCG12
SMCG12A
SMCG13
SMCG13A
SMCG14
SMCG14A
SMCG15
SMCG15A
SMCG16
SMCG16A
SMCG17
SMCG17A
SMCG18
SMCG18A
SMCG20
SMCG20A
SMCG22
SMCG22A
SMCG24
SMCG24A
Continued.
J-Bend
SMCJ5.0
SMCJ5.0A
SMCJ6.0
SMCJ6.0A
SMCJ6.5
SMCJ6.5A
SMCJ7.0
SMCJ7.0A
SMCJ7.5
SMCJ7.5A
SMCJ8.0
SMCJ8.0A
SMCJ8.5
SMCJ8.5A
SMCJ9.0
SMCJ9.0A
SMCJ10
SMCJ10A
SMCJ11
SMCJ11A
SMCJ12
SMCJ12A
SMCJ13
SMCJ13A
SMCJ14
SMCJ14A
SMCJ15
SMCJ15A
SMCJ16
SMCJ16A
SMCJ17
SMCJ17A
SMCJ18
SMCJ18A
SMCJ20
SMCJ20A
SMCJ22
SMCJ22A
SMCJ24
SMCJ24A
V
WM
Volts
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
BREAKDOWN
VOLTAGE
V
(BR)
@ I
(BR)
Volts
I
(BR)
MIN. MAX.
mA
6.40 – 7.30
10
6.40 – 7.00
10
6.67 – 8.15
10
6.67 – 7.37
10
7.22 – 8.82
10
7.22 – 7.98
10
7.78 – 9.51
10
7.78 – 8.60
10
8.33 – 10.2
1
8.33 – 9.21
1
8.89 – 10.9
1
8.89 – 9.83
1
9.44 – 11.5
1
9.44 – 10.4
1
10.0 – 12.2
1
10.0 – 11.1
1
11.1 – 13.6
1
11.1 – 12.3
1
12.2 – 14.9
1
12.2 – 13.5
1
13.3 – 16.3
1
13.3 – 14.7
1
14.4 – 17.6
1
14.4 – 15.9
1
15.6 – 19.1
1
15.6 – 17.2
1
16.7 – 20.4
1
16.7 – 18.5
1
17.8 – 21.8
1
17.8 – 19.7
1
18.9 – 23.1
1
18.9 – 20.9
1
20.0 – 24.4
1
20.0 – 22.1
1
22.2 – 27.1
1
22.2 – 24.5
1
24.4 – 29.8
1
24.4 – 26.9
1
26.7 – 32.6
1
26.7 – 29.5
1
MAXIMUM
CLAMPING
VOLTAGE
@ I
PP
Volts
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
PEAK PULSE
CURRENT
(See Fig. 2)
I
PP
Amps
156.2
163.0
131.6
145.6
122.0
133.9
112.8
125.0
104.9
116.3
100.0
110.3
94.3
104.2
88.7
97.4
79.8
88.2
74.6
82.4
68.2
75.3
63.0
69.7
58.1
64.7
55.8
61.5
52.1
57.7
49.2
53.3
46.6
51.4
41.9
46.3
38.1
42.2
34.9
38.6
MAXIMUM
STANDBY
CURRENT
@ V
WM
I
D
µA
1000
1000
1000
1000
500
500
200
200
100
100
50
50
20
20
10
10
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
RF01116, Rev. A (3/27/13)
©2013 Microsemi Corporation
Page 3 of 7
SMCG5.0 – SMCG170CA,
SMCJ5.0 – SMCJ170CA
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise stated (continued)
REVERSE
STAND-OFF
VOLTAGE
MICROSEMI PART NUMBER
Gull-Wing
SMCG26
SMCG26A
SMCG28
SMCG28A
SMCG30
SMCG30A
SMCG33
SMCG33A
SMCG36
SMCG36A
SMCG40
SMCG40A
SMCG43
SMCG43A
SMCG45
SMCG45A
SMCG48
SMCG48A
SMCG51
SMCG51A
SMCG54
SMCG54A
SMCG58
SMCG58A
SMCG60
SMCG60A
SMCG64
SMCG64A
SMCG70
SMCG70A
SMCG75
SMCG75A
SMCG78
SMCG78A
SMCG85
SMCG85A
SMCG90
SMCG90A
SMCG100
SMCG100A
SMCG110
SMCG110A
SMCG120
SMCG120A
SMCG130
SMCG130A
SMCG150
SMCG150A
SMCG160
SMCG160A
SMCG170
SMCG170A
J-Bend
SMCJ26
SMCJ26A
SMCJ28
SMCJ28A
SMCJ30
SMCJ30A
SMCJ33
SMCJ33A
SMCJ36
SMCJ36A
SMCJ40
SMCJ40A
SMCJ43
SMCJ43A
SMCJ45
SMCJ45A
SMCJ48
SMCJ48A
SMCJ51
SMCJ51A
SMCJ54
SMCJ54A
SMCJ58
SMCJ58A
SMCJ60
SMCJ60A
SMCJ64
SMCJ64A
SMCJ70
SMCJ70A
SMCJ75
SMCJ75A
SMCJ78
SMCJ78A
SMCJ85
SMCJ85A
SMCJ90
SMCJ90A
SMCJ100
SMCJ100A
SMCJ110
SMCJ110A
SMCJ120
SMCJ120A
SMCJ130
SMCJ130A
SMCJ150
SMCJ150A
SMCJ160
SMCJ160A
SMCJ170
SMCJ170A
V
WM
Volts
26
26
28
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
BREAKDOWN
VOLTAGE
V
(BR)
@ I
(BR)
Volts
I
(BR)
MIN. MAX.
mA
28.9 – 35.3
1
28.9 – 31.9
1
31.1 – 38.0
1
31.1 – 34.4
1
33.3 – 40.7
1
33.3 – 36.8
1
36.7 – 44.9
1
36.7 – 40.6
1
40.0 – 48.9
1
40.0 – 44.2
1
44.4 – 54.3
1
44.4 – 49.1
1
47.8 – 58.4
1
47.8 – 52.8
1
50.0 – 61.1
1
50.0 – 55.3
1
53.3 – 65.1
1
53.3 – 58.9
1
56.7 – 69.3
1
56.7 – 62.7
1
60.0 – 73.3
1
60.0 – 66.3
1
64.4 – 78.7
1
64.4 – 71.2
1
66.7 – 81.5
1
66.7 – 73.7
1
71.1 – 86.9
1
71.1 – 78.6
1
77.8 – 95.1
1
77.8 – 86.0
1
83.3 – 102.0
1
83.3 – 92.1
1
86.7 – 106.0
1
86.7 – 95.8
1
94.4 – 115.0
1
94.4 – 104.0
1
100 – 122
1
100 – 111
1
111 – 136
1
111 – 123
1
122 – 149
1
122 – 135
1
133 – 163
1
133 – 147
1
144 – 176
1
144 – 159
1
167 – 204
1
167 – 185
1
178 – 218
1
178 – 197
1
189 – 231
1
189 – 209
1
MAXIMUM
CLAMPING
VOLTAGE
@ I
PP
Volts
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103.0
93.6
107.0
96.8
114.0
103.0
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
PEAK PULSE
CURRENT
(See Fig. 2)
I
PP
Amps
32.2
35.6
30.0
33.0
28.0
31.0
25.2
28.1
23.3
25.8
21.0
23.2
19.6
21.6
18.7
20.6
17.5
19.4
18.5
18.2
15.6
17.2
14.6
16.0
14.0
15.5
13.2
14.6
12.0
13.3
11.2
12.4
10.8
11.4
9.9
10.4
9.4
10.3
8.4
9.3
7.7
8.4
7.0
7.8
6.5
7.2
5.6
6.2
5.2
5.8
4.9
5.5
MAXIMUM
STANDBY
CURRENT
@ V
WM
I
D
µA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
For bidirectional device types, indicate a C or CA suffix after the part number. (i.e.: SMCG170CA). Bidirectional capacitance is half that
shown in
Figure 4
at zero volts.
RF01116, Rev. A (3/27/13)
©2013 Microsemi Corporation
Page 4 of 7
SMCG5.0 – SMCG170CA,
SMCJ5.0 – SMCJ170CA
GRAPHS
100
(Waveform – See Figure 2)
Non-repetitive
10
Test wave form
parameters
tr = 10
µsec.
tp = 1000
µsec.
(P
PP
) – Peak Pulse Power - kW
1.0
0
0
1µs
10µsec
100µsec
tp – Pulse Time – sec
1ms
10ms
I
PP
– Peak Pulse Current - %I
PP
t – Time (msec)
FIGURE 2
– Pulse Waveform
FIGURE 1 –
Peak Pulse Power vs. Pulse Time
Peak Pulse Power (
P
PP
) or continuous
Power in Percent of 25
o
C Rating
T
L
Lead Temperature
o
C
C – Capacitance (pF)
B
V
– Breakdown Voltage (V)
FIGURE 3 –
Derating Curve
FIGURE 4
Typical Capacitance vs.
Breakdown Voltage
RF01116, Rev. A (3/27/13)
©2013 Microsemi Corporation
Page 5 of 7
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