SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.40 V to 209 V
6.40 V to 209 V
5.0 V to 170 V
1500 W
200 A
150 °C
Uni-directional, bi-directional
DO-214AB (SMCJ)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AB (SMCJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
per
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMCJ188CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Power dissipation on infinite heatsink, T
A
= 50 °C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
P
D
T
J
, T
STG
VALUE
1500
See next table
200
6.5
- 55 to + 150
UNIT
W
A
A
W
°C
Revision: 10-Dec-13
Document Number: 89331
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
122
133
144
167
178
189
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
111
123
135
147
159
185
197
209
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)SMCJ5.0A
(+)SMCJ6.0A
(+)SMCJ6.5A
(+)SMCJ7.0A
(+)SMCJ7.5A
(+)SMCJ8.0A
(+)SMCJ8.5A
(+)SMCJ9.0A
(+)SMCJ10A
(+)SMCJ11A
(+)SMCJ12A
(+)SMCJ13A
(+)SMCJ14A
(+)SMCJ15A
(+)SMCJ16A
(+)SMCJ17A
(+)SMCJ18A
(+)SMCJ20A
(+)SMCJ22A
(+)SMCJ24A
(+)SMCJ26A
(+)SMCJ28A
(+)SMCJ30A
(+)SMCJ33A
(+)SMCJ36A
(+)SMCJ40A
(+)SMCJ43A
(+)SMCJ45A
(+)SMCJ48A
(+)SMCJ51A
(+)SMCJ54A
(+)SMCJ58A
(+)SMCJ60A
(+)SMCJ64A
(+)SMCJ70A
(+)SMCJ75A
(+)SMCJ78A
(+)SMCJ85A
(+)SMCJ90A
(+)SMCJ100A
(+)SMCJ110A
(+)SMCJ120A
(+)SMCJ130A
(+)SMCJ150A
(+)SMCJ160A
(+)SMCJ170A
(5)
DEVICE MARKING
CODE
UNI
GDE
GDG
GDK
GDM
GDP
GDR
GDT
GDV
GDX
GDZ
GEE
GEG
GEK
GEM
GEP
GER
GET
GEV
GEX
GEZ
GFE
GFG
GFK
GFM
GFP
GFR
GFT
GFV
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
GGV
GGX
GGZ
GHE
GHG
GHK
GHM
GHP
GHR
BI
GDE
GDG
BDK
GDM
BDP
BDR
BDT
BDV
BDX
GDZ
BEE
GEG
BEK
BEM
GEM
GER
BET
BEV
BEX
BEZ
BFE
GFG
BFK
BFM
BFP
BFR
BFT
GFV
GFX
GFZ
GGE
GGG
GGK
GGM
GGP
GGR
GGT
GGV
GGX
GGZ
GHE
GHG
GHK
GHM
GHP
GHR
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
800
800
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
MAXIMUM
PEAK PULSE CLAMPING
SURGE
VOLTAGE AT
CURRENT
I
PPM
I
PPM
(A)
(2)
V
C
(V)
163.0
145.6
133.9
125.0
116.3
110.3
104.2
97.4
88.2
82.4
75.4
69.8
64.7
61.5
57.7
54.3
51.4
46.3
42.3
38.6
35.6
33.0
31.0
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.9
10.9
10.3
9.3
8.5
7.8
7.2
6.2
5.8
5.5
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4)
All terms and symbols are consistent with ANSI/IEEE C62.35
(5)
For the bi-directional SMCJ5.0CA, the maximum V
BR
is 7.25 V
(6)
V = 3.5 V at I = 25 A (uni-directional only)
F
F
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Revision: 10-Dec-13
Document Number: 89331
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
(1)
R
JL
VALUE
75
15
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMCJ5.0A-M3/57T
SMCJ5.0A-M3/9AT
UNIT WEIGHT (g)
0.211
0.211
PREFERRED PACKAGE CODE
57T
9AT
BASE QUANTITY
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10 µs
Peak Value
I
PPM
10
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
20 000
Fig. 3 - Pulse Waveform
75
C
J
- Junction Capacitance (pF)
10 000
Measured at
Zero Bias
1000
V
R
, Measured at
Stand-Off
Voltage V
WM
100
Uni-Directional
Bi-Directional
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
400
50
25
0
0
25
50
75
100
125
150
175
200
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
Revision: 10-Dec-13
Document Number: 89331
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMCJ5.0A thru SMCJ188CA
www.vishay.com
Vishay General Semiconductor
200
100
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
100
10
1.0
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
10
1
10
100
0.1
0.001
0.01
0.1
1
10
100
1000
t
p
- Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AB (SMC J-Bend)
Cathode Band
0.185 (4.69)
MAX.
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
MIN.
0.320 REF.
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008 (0.2)
0 (0)
Revision: 10-Dec-13
Document Number: 89331
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 13-Jun-16
1
Document Number: 91000
