SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-214AB (SMC)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 188 V
1500 W
6.5 W
200 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
DO-214AB (SMCJ)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMCJ188CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)(2)
Peak pulse current with a 10/1000 µs waveform
(1)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
Power dissipation on infinite heatsink, T
A
= 50 °C
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PPM
I
FSM
P
D
T
J
, T
STG
VALUE
1500
See next table
200
6.5
- 55 to + 150
UNIT
W
A
A
W
°C
Document Number: 88394
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
(+)
(+)
DEVICE MARKING
CODE
UNI
BI
GDD
GDE
GDF
GDG
BDH
BDK
GDL
GDM
BDN
BDP
BDG
BDR
BDS
BDT
BDU
BDV
BDW
BDX
GDY
GDZ
BED
BEE
GEF
GEG
BEH
BEK
BEL
BEM
GEN
GEP
GEQ
GER
BES
BET
BEU
BEV
BEW
BEX
BEY
BEZ
BFD
BFE
BFF
BFG
BFH
BFK
BFL
BFM
BFN
BFP
BFQ
BFR
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
MAX.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
I
T
(mA)
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1000
1000
1000
1000
500
500
200
200
100
100
50
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
156.3
163.0
131.6
145.6
122.0
133.9
112.8
125.0
104.9
116.3
100.0
110.3
94.3
104.2
88.8
97.4
79.8
88.2
74.6
82.4
68.2
75.4
63.0
69.8
58.1
64.7
55.8
61.5
52.1
57.7
49.2
54.3
46.6
51.4
41.9
46.3
38.1
42.3
34.9
38.6
32.2
35.6
30.0
33.0
28.0
31.0
25.4
28.1
23.3
25.8
21.0
23.3
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
SMCJ5.0
(+)
SMCJ5.0A
(5)
SMCJ6.0
SMCJ6.0A
(+)
SMCJ6.5
(+)
SMCJ6.5A
(+)
SMCJ7.0
(+)
SMCJ7.0A
(+)
SMCJ7.5
(+)
SMCJ7.5A
(+)
SMCJ8.0
(+)
SMCJ8.0A
(+)
SMCJ8.5
(+)
SMCJ8.5A
(+)
SMCJ9.0
(+)
SMCJ9.0A
(+)
SMCJ10
(+)
SMCJ10A
(+)
SMCJ11
(+)
SMCJ11A
(+)
SMCJ12
(+)
SMCJ12A
(+)
SMCJ13
(+)
SMCJ13A
(+)
SMCJ14
(+)
SMCJ14A
(+)
SMCJ15
(+)
SMCJ15A
(+)
SMCJ16
(+)
SMCJ16A
(+)
SMCJ17
(+)
SMCJ17A
(+)
SMCJ18
(+)
SMCJ18A
(+)
SMCJ20
(+)
SMCJ20A
(+)
SMCJ22
(+)
SMCJ22A
(+)
SMCJ24
(+)
SMCJ24A
(+)
SMCJ26
(+)
SMCJ26A
(+)
SMCJ28
(+)
SMCJ28A
(+)
SMCJ30
(+)
SMCJ30A
(+)
SMCJ33
(+)
SMCJ33A
(+)
SMCJ36
(+)
SMCJ36A
(+)
SMCJ40
(+)
SMCJ40A
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2
GDD
GDE
GDF
GDG
GDH
GDK
GDL
GDM
GDN
GDP
GDQ
GDR
GDS
GDT
GDU
GDV
GDW
GDX
GDY
GDZ
GED
GEE
GEF
GEG
GEH
GEK
GEL
GEM
GEN
GEP
GEQ
GER
GES
GET
GEU
GEV
GEW
GEX
GEY
GEZ
GFD
GFE
GFF
GFG
GFH
GFK
GFL
GFM
GFN
GFP
GFQ
GFR
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88394
Revision: 21-Oct-08
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)
(+)
(+)
DEVICE MARKING
CODE
UNI
BI
BFS
BFT
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
GHT
GHS
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX.
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(µA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE
CURRENT
I
PPM
(A)
(2)
19.6
21.6
18.7
20.6
17.5
19.4
16.5
18.2
15.6
17.2
14.6
16.0
14.0
15.5
13.2
14.6
12.0
13.3
11.2
12.4
10.8
11.9
9.9
10.9
9.4
10.3
8.4
9.3
7.7
8.5
7.0
7.8
6.5
7.2
5.6
6.2
5.2
5.8
4.9
5.5
4.4
4.6
MAXIMUM
CLAMPING
VOLTAGE AT
I
PPM
V
C
(V)
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93
107
96
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
SMCJ43
SMCJ45
SMCJ48
(+)
SMCJ43A
(+)
SMCJ45A
(+)
SMCJ48A
(+)
SMCJ51
(+)
(+)
SMCJ51A
SMCJ54
(+)
SMCJ54A
(+)
SMCJ58
(+)
SMCJ58A
(+)
SMCJ60
(+)
SMCJ60A
(+)
SMCJ64
(+)
SMCJ64A
(+)
SMCJ70
(+)
SMCJ70A
(+)
SMCJ75
(+)
SMCJ75A
(+)
SMCJ78
(+)
SMCJ78A
(+)
SMCJ85
(+)
SMCJ85A
(+)
SMCJ90
(+)
SMCJ90A
(+)
SMCJ100
(+)
SMCJ100A
(+)
SMCJ110
(+)
SMCJ110A
(+)
SMCJ120
(+)
SMCJ120A
(+)
SMCJ130
(+)
SMCJ130A
(+)
SMCJ150
(+)
SMCJ150A
(+)
SMCJ160
(+)
SMCJ160A
(+)
SMCJ170
(+)
SMCJ170A
SMCJ188
SMCJ188A
GFS
GFT
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
GHT
GHS
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMCJ5.0CA, the maximum V
BR
is 7.25 V
(6) V
F
= 3.5 V at I
F
= 100 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number: 88394
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient air
Typical thermal resistance, junction to leads
Note:
(1) Mounted on minimum recommended pad layout
(1)
SYMBOL
R
θJA
R
θJL
VALUE
75
15
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMCJ5.0A-E3/57T
SMCJ5.0A-E3/9AT
SMCJ5.0AHE3/57T
(1)
UNIT WEIGHT (g)
0.211
0.211
0.211
0.211
PREFERRED PACKAGE CODE
57T
9AT
57T
9AT
BASE QUANTITY
850
3500
850
3500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SMCJ5.0AHE3/9AT
(1)
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10
µs
Peak
Value
I
PPM
10
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.31 x 0.31" (8.0 x
8.0
mm)
Copper Pad Areas
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
20 000
75
C
J
- Junction Capacitance (pF)
10 000
Measured at
Zero Bias
1000
V
R
, Measured at
Stand-Off
Voltage V
WM
100
Uni-Directional
Bi-Directional
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
400
50
25
0
0
25
50
75
100
125
150
175
200
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance Uni-Directional
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88394
Revision: 21-Oct-08
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
100
200
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
100
10
1.0
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
10
1
10
100
0.1
0.001
0.01
0.1
1
10
100
1000
t
p
- Pulse Duration (s)
Number
of Cycles at 60 Hz
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AB (SMC J-Bend)
Cathode Band
0.185 (4.69)
MAX.
Mounting Pad Layout
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 (3.20)
MIN.
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
MIN.
0.320 REF.
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008 (0.2)
0 (0)
Document Number: 88394
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
MEMS传感器
