SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
1500W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 100 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
1500
5
200
3.5 / 5.0
10
55
- 55 to +150
- 55 to +150
UNIT
W
W
A
V
°C/W
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Note 2: V
F
=3.5V on SMCJ5.0 - SMCJ90 and V
F
=5.0V on SMCJ100 - SMCJ170
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170
2. Electrical characteristics apply in both directions
Version: O1602
SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
SMCJxxxx
(Note 1)
PART NO.
SUFFIX
H
PACKING CODE
R7
R6
M6
G
PACKING CODE
SUFFIX
PACKAGE
SMC
SMC
SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note 1: "xxxx" defines voltage from 5.0V (SMCJ5.0) to 170V (SMCJ170A)
EXAMPLE
EXAMPLE
PART NO.
SMCJ170AHR7G
PART NO.
SMCJ170A
PART NO.
SUFFIX
H
PACKING CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
Version: O1602
SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE, %
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT UNIDIRECTIONAL ONLY
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
1000
tr=10μs
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
8.3ms single half sine wave
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
100
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100000
CJ, JUNCTION CAPACITANCE (pF)
A
UNIDIRECTIONAL
BIDIRECTIONAL
10000
V
R
=0
1000
100
f=1.0MHz
Vsig=50mVp-p
V
R
-rated
stand-off
voltage
10
100
10
1
V(
BR
), BREAKDOWN VOLTAGE (V)
Version: O1602
SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
Device
Device
Marking
Code
Min
SMCJ5.0
SMCJ5.0A
SMCJ6.0
SMCJ6.0A
SMCJ6.5
SMCJ6.5A
SMCJ7.0
SMCJ7.0A
SMCJ7.5
SMCJ7.5A
SMCJ8.0
SMCJ8.0A
SMCJ8.5
SMCJ8.5A
SMCJ9.0
SMCJ9.0A
SMCJ10
SMCJ10A
SMCJ11
SMCJ11A
SMCJ12
SMCJ12A
SMCJ13
SMCJ13A
SMCJ14
SMCJ14A
SMCJ15
SMCJ15A
SMCJ16
SMCJ16A
SMCJ17
SMCJ17A
SMCJ18
SMCJ18A
SMCJ20
SMCJ20A
SMCJ22
SMCJ22A
SMCJ24
SMCJ24A
SMCJ26
SMCJ26A
SMCJ28
SMCJ28A
SMCJ30
SMCJ30A
SMCJ33
SMCJ33A
SMCJ36
SMCJ36A
GDD
GDE
GDF
GDG
GDH
GDK
GDL
GDM
GDN
GDP
GDQ
GDR
GDS
GDT
GDU
GDV
GDW
GDX
GDY
GDZ
GED
GEE
GEF
GEG
GEH
GEK
GEL
GEM
GEN
GEP
GEQ
GER
GES
GET
GEU
GEV
GEW
GEX
GEY
GEZ
GFD
GFE
GFF
GFG
GFH
GFK
GFL
GFM
GFN
GFP
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
V
BR
(V)
at I
T
Max
7.30
7.00
8.15
7.37
8.82
7.98
9.51
8.60
10.30
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Stand-Off
Voltage
V
WM
(V)
5
5
6
6
6.5
6.5
7
7
7.5
7.5
8
8
8.5
8.5
9
9
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
Maximum
Reverse Leakage
@ V
WM
I
R
(μA) (Note3)
1000
1000
1000
1000
500
500
200
200
100
100
50
50
20
20
10
10
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Peak Surge
Current
I
PPM
(A) (Note2)
164
171
138
152
128
140
118
131
110
122
105
115
99
109
93
102
83
92
78
86
71
79
66
73
61
67
58
64
54
60
51
57
48
53
43
48
39
44
36
40
33
37
31
34
29
32
26
29
24
27
Maximum
Clamping
Voltage at I
PPM
Vc (V)
(Note5)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
Version: O1602
SMCJ SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
at I
T
Min
SMCJ40
SMCJ40A
SMCJ43
SMCJ43A
SMCJ45
SMCJ45A
SMCJ48
SMCJ48A
SMCJ51
SMCJ51A
SMCJ54
SMCJ54A
SMCJ58
SMCJ58A
SMCJ60
SMCJ60A
SMCJ64
SMCJ64A
SMCJ70
SMCJ70A
SMCJ75
SMCJ75A
SMCJ78
SMCJ78A
SMCJ85
SMCJ85A
SMCJ90
SMCJ90A
SMCJ100
SMCJ100A
SMCJ110
SMCJ110A
SMCJ120
SMCJ120A
SMCJ130
SMCJ130A
SMCJ150
SMCJ150A
SMCJ160
SMCJ160A
SMCJ170
SMCJ170A
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
3. For bipolar types having V
WM
of 10 volts and less, the I
R
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version: O1602
GFQ
GFR
GFS
GFT
GFU
GFV
GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
Max
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
Test
Current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Stand-Off
Voltage
V
WM
(V)
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse Leakage
@ V
WM
I
R
(μA) (Note3)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Peak Surge
Current
I
PPM
(A) (Note2)
22
24
20
22
19
21
18
20
17
19
16
18
15
16
14
16
13.8
15
12.6
13.9
11.7
13
11.3
12.5
10.4
11.5
9.8
10.7
8.8
9.7
8
8.9
7.3
8.1
6.8
7.5
5.8
6.4
5.4
6
5.1
5.7
Maximum
Clamping
Voltage at I
PPM
Vc (V)
(Note5)
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
Device
Device
Marking
Code
