SMDJ10A - SMDJ100A
Taiwan Semiconductor
3000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PK
T
J MAX
Package
VALUE
10 - 100
11.1 - 123
3000
175
UNIT
V
V
W
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● Immunization of sensitive devices in automotive,
telecommunications, consumer electronics, and industrial
equipment from electrostatic discharge (ESD) and transient
voltages induced by load switching and lightning.
Configuration
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case：DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal：Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity：As marked
Weight： 0.29 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms
(1)
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
VALUE
3000
6.5
300
3.5 /5.0
-55 to +175
-55 to +175
UNIT
W
W
A
V
°C
°C
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
(2)
Forward Voltage @ I
F
=100A for Unidirectional only
Junction temperature
Storage temperature
T
STG
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25°C per Fig. 2
2. V
F
=3.5V on SMDJ10A - SMDJ90A devices and V
F
=5.0V on SMDJ100A
Devices for bipolar applications
1. For bidirectional use CA suffix for SMDJ10A – SMDJ64A
2. Electrical characteristics apply in both directions
1
Version:E1708
SMDJ10A - SMDJ100A
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
Junction-to-lead thermal resistance
SYMBOL
R
ӨJA
R
ӨJL
LIMIT
75
15
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Test
voltage
Marking code
current
V
BR
@I
T
I
T
(V)
(mA)
UNI.
PDX
PDZ
PEE
PEG
PEK
PEM
PEP
PER
PET
PEV
PEX
PEZ
PFE
PFG
PFK
PFM
PFP
PFR
PFT
PFV
PFX
PFZ
PGE
PGG
PGK
PGM
PGP
PGR
PGT
PGV
PGX
PGZ
Part number
Working
stand-off
voltage
V
WM
(V)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
Maximum
Maximum
Maximum
peak impulse clamping
Reverse
current
voltage
Leakage
I
PPM
V
C
@I
PPM
I
R
@V
WM
(µA)
(A)
(V)
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
176.5
164.8
150.8
139.5
129.3
123.0
115.4
108.7
102.7
92.6
84.5
77.1
71.3
66.1
62.0
56.3
51.6
46.5
43.2
41.3
38.8
36.4
34.4
32.1
31.0
29.1
26.5
24.8
23.8
21.9
20.5
18.5
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
126
137
146
162
UNI.
SMDJ10A
SMDJ11A
SMDJ12A
SMDJ13A
SMDJ14A
SMDJ15A
SMDJ16A
SMDJ17A
SMDJ18A
SMDJ20A
SMDJ22A
SMDJ24A
SMDJ26A
SMDJ28A
SMDJ30A
SMDJ33A
SMDJ36A
SMDJ40A
SMDJ43A
SMDJ45A
SMDJ48A
SMDJ51A
SMDJ54A
SMDJ58A
SMDJ60A
SMDJ64A
SMDJ70A
SMDJ75A
SMDJ78A
SMDJ85A
SMDJ90A
SMDJ100A
BI.
SMDJ10CA
SMDJ11CA
SMDJ12CA
SMDJ13CA
SMDJ14CA
SMDJ15CA
SMDJ16CA
SMDJ17CA
SMDJ18CA
SMDJ20CA
SMDJ22CA
SMDJ24CA
SMDJ26CA
SMDJ28CA
SMDJ30CA
SMDJ33CA
SMDJ36CA
SMDJ40CA
SMDJ43CA
SMDJ45CA
SMDJ48CA
SMDJ51CA
SMDJ54CA
SMDJ58CA
SMDJ60CA
SMDJ64CA
BI.
DDX
DDZ
DEE
DEG
DEK
DEM
DEP
DER
DET
DEV
DEX
DEZ
DFE
DFG
DFK
DFM
DFP
DFR
DFT
DFV
DFX
DFZ
DGE
DGG
DGK
DGM
MIN. MAX.
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
111
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104
111
123
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
Version:E1708
SMDJ10A - SMDJ100A
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R7
R6
SMDJxxxx
(Note 1)
H
M6
V7
V6
Note :
1. "xxxx" defines voltage from 10V (SMDJ10A) to 100V (SMDJ100A)
*: Optional available
PACKING CODE
SUFFIX(*)
PACKAGE
SMC
SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Plastic reel
G
SMC
Matrix SMC
Matrix SMC
EXAMPLE
EXAMPLE P/N
SMDJ10AHR7G
PART NO.
SMDJ10A
PART NO.
SUFFIX
H
PACKING
CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:E1708
SMDJ10A - SMDJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE (%)
100
P
PPM
, PEAK PULSE POWER, KW
Non-repetitive
pulse waveform
shown in fig.3
10
125
Fig.2 Pulse Derating Curve
100
75
50
1
25
0.1
0.001
0
0
25
50
75
100
125
150
°
0.01
0.1
tp, PULSE WIDTH, (ms)
1
10
175
200
T
A
, AMBIENT TEMPERATURE ( C)
Fig.3 Clamping Power Pulse Waveform
10000
140
120
100
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
td
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Fig.4 Typical Junction Capacitance
CJ, JUNCTION CAPACITANCE (pF)
A
Rise time tr=10μs to 100% of I
PPM
1000
VR=0
100
V
R
-rated
stand-off voltage
f=1.0MHz
Vsig=50mVp-p
10
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
4
Version:E1708
SMDJ10A - SMDJ100A
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
IFSM, PEAK FORWARD SURGE CURRENT (A)
1000
8.3ms single half sine wave
unidirectional only
100
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
5
Version:E1708
