LAB
D PAK Package
Back of Case
Cathode
SEME
SML20SUZ12S
3
Ultrafast Recovery Diode
1200 Volt, 20 Amp
TECHNOLOGY
The planar passivated and standard ultrafast recovery
diode features a triple charge control action utilising
20SUZ12S
SML
S M L
12D
10SUZ
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
1- Cathode
BENEFITS
2- Anode
l
l
l
l
Very fast recovery for low switching losses
Ultra soft recovery with low EMI generation
High dynamic ruggedness under all conditions
Low temperature dependency
Low on-state losses with positive temperature coefficient
Stable blocking voltage and low leakage current
Avalanche rated for high reliability circuit operation
1
2
l
l
l
See package outline for mechanical data and more details
Key Parameters
APPLICATIONS
V
R
V
F
I
F
t
rr
(max)
(typ)
(max)
(max)
1200V
2.4V
20A
45ns
l
l
l
l
l
l
Freewheeling Diode for IGBTs and MOSFETs
Uninterruptible Power Supplies UPS
Switch Mode Power Supplies SMPS
Inverse and Clamping Diode
Snubber Diode
Fast Switching Rectification
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25°C unless otherwise stated)
V
RRM
V
R
I
FAV
I
FSM(surge)
I
FS(surge)
P
D
W
AVL
T
j
,T
STG
Peak Repetitive Reverse Voltage
DC Reverse Blocking Voltage
Average Forward Current @Tc = 85°C
Repetitive Forward Current
Non-Repetitive Forward Current (10msec pulse)
Power Dissipation @Tc = 85°C
Avalanche Energy (L=40mH)
Operating & Storage Junction Temperature
1200V
1200V
20A
50A
200A
55W
20mJ
-55 to 150°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim 8/00
LAB
ELECTRICAL & MECHANICAL CHARACTERISTICS
Parameter
Test Conditions
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
1.9
0.7
0.5
TBD
0.96
32
60
1.38
39
72
45
500
4
µA
mA
pF
µC
A
nsec
µC
A
nsec
nsec
SEME
SML20SUZ12S
Min.
Typ.
2.4
Max.
2.75
2.8
Unit
STATIC ELECTRICAL CHARACTERISTICS
I
F
= 20A
V
Forward Voltage Drop
I
F
= 20A
F
I
F
= 10A
I
R
C
T
Leakage Current
Junction Capacitance
V
R
= 1200V
V
R
= 1200V
V
R
= 200V
V
DYNAMIC ELECTRICAL CHARACTERISTICS
Q
rr
Reverse Recovery Charge
V
R
= 600V
I
F
= 20A
Reverse Recovery Current
I
rr
di /dt = 1000A/µs
T
j
= 25°C
Reverse Recovery Time
t
rr
Q
rr
I
rr
t
rr
t
rr
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Time
V
R
= 600V
I
F
= 20A
di /dt = 1000A/µs
T
j
= 125°C
V
R
= 50V
di /dt = 100A/µs
I
F
= 1A
T
j
= 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Junction to Case Thermal Resistance
R
θjc
R
θja
T
L
L
S
Junction to Ambient Thermal Resistance
Lead Temperature
Stray Inductance
10
TBD
1.4
300
°C/W
°C
nH
D PAK Package Outline
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05 (.632)
13.30 (.524)
13.60 (.535)
3
1.00 (.039)
1.15 (.045)
Cathode
18.70 (.736)
19.10 (.752)
1
2
Revised
2/24/95
12.40 (.488)
12.70 (.500)
0.40 (.016)
0.65 (.026)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.20 (.047)
1.40 (.055)
1.15 (.045)
1.45 (.057)
1.90 (.075)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
2- Anode
1- Cathode
Dimensions in Millimeters and (Inches)
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim 8/00
