®
SP207EH–SP213EH
High Speed +5V High Performance
RS232 Transceivers
s
s
s
s
s
s
s
s
s
s
Single +5V Supply Operation
0.1µF External Charge Pump Capacitors
500Kbps Data Rate Under Load
Standard SOIC and SSOP Packages
Lower Supply Current Than Competition
(typical 3mA)
1µA Shutdown Mode
WakeUp Feature in Shutdown Mode
Tri–State Receiver Outputs
Ideal for High Speed RS-232 Applications
Improved ESD Specifications:
+15kV Human Body Model
+15kV IEC1000-4-2 Air Discharge
+8kV IEC1000-4-2 Contact Discharge
DESCRIPTION
The
SP207EH/208EH/211EH/213EH
devices are high speed enhanced multi-channel
RS-232 line transceivers with improved electrical performance. The
SP207EH/208EH/
211EH/213EH
series is a superior drop-in replacement to our previous versions as well as
popular industry standards. All devices feature low-power CMOS construction and the
Sipex-patented
(5,306,954) on-board charge pump circuitry that generates the +10V
RS-232 voltage levels using 0.1µF charge pump capacitors. The
SP211E
and
SP213E
devices feature a low-power shutdown mode, which reduces power supply drain to 1µA.
Enhancements to this series include a higher transmission rate of 500Kbps, a lower
power supply current at 3mA typical (no load), and superior ESD performance. The ESD
tolerance has been improved for this series to over +15kV for both Human Body Model and
IEC1000-4-2 Air Discharge test methods.
Nu RS232
Model
Drivers Receivers
SP207EH
5
3
SP208EH
4
4
SP211EH
4
5
SP213EH
4
5
Table 1. Model Selection Table
No. of Receivers
No. of External
Active in Shutdown 0.1µF Capacitors
0
4
0
4
0
4
2
4
Shutdown WakeUp TTL Tri–State
No
No
No
No
No
No
Yes
No
Yes
Yes
Yes
Yes
SP207EHDS/08
SP207EH Series High Performance Transceivers
© Copyright 2000 Sipex Corporation
1
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of the device at
these or any other above those indicated in the operation sections of
the specifications below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect reliability.
V
CC
............................................................................................ +6V
V
+
................................................................. (V
CC
– 0.3V) to +13.2V
V
–
........................................................................................... 13.2V
Input Voltages
T
IN
................................................................... –0.3V to (V
CC
+0.3V)
R
IN
...........................................................................................
±20V
Output Voltages
T
OUT
.......................................................... (V
+
, +0.3V) to (V
–
, –0.3V)
R
OUT
................................................................. –0.3V to (V
CC
+0.3V)
Short Circuit Duration on T
OUT
....................................... Continuous
Power Dissipation
Plastic DIP .......................................................................... 375mW
(derate 7mW/°C above +70°C)
Small Outline ...................................................................... 375mW
(derate 7mW/°C above +70°C)
Power Dissipation Per Package
24-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
24-pin PDIP (derate 15.9mW/
o
C above +70
o
C)....1300mW
24-pin SOIC (derate 12.5mW/
o
C above +70
o
C)...1000mW
28-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
28-pin SOIC (derate 12.7mW/
o
C above +70
o
C)...1000mW
SPECIFICATIONS
V
CC
at nominal ratings; 0.1µF charge pump capacitors; T
MIN
to T
MAX
, unless otherwise noted.
PARAMETER
TTL INPUTS
Logic Threshold
V
IL
V
IH
Logic Pullup Current
Maximum Transmission Rate
TTL OUTPUTS
Compatibility
V
OL
V
OH
Leakage Current
MIN.
TYP.
MAX.
UNIT
CONDITIONS
T
IN
, EN, SD
0.8
2.0
15
480
TTL/CMOS
0.4
3.5
0.05
+10
200
Volts
Volts
µA
Kbps
T
IN
= 0V
C
L
= 1000pF, R
L
= 3KΩ
Volts
Volts
µA
0V
≤
R
OUT
≤
V
CC
; SP211 EN = 0V;
SP213 EN = V
CC
T
A
= +25°C
I
OUT
= 3.2mA; V
CC
= +5V
I
OUT
= –1.0mA
RS232 OUTPUT
Output Voltage Swing
+5
+7
+25
+15
1.2
1.7
0.5
5
250
200
2.8
1.0
7
Volts
Ω
mA
Volts
Volts
Volts
Volts
kΩ
ns
ns
V/µs
µs
ns
ns
Output Resistance
300
Output Short Circuit Current
RS232 INPUT
Voltage Range
–15
Voltage Threshold
Low
0.8
High
Hysteresis
0.2
Resistance
3
DYNAMIC CHARACTERISTICS
Driver Propagation Delay
Receiver Propagation Delay
Instantaneous Slew Rate
Transition Time
Output Enable Time
Output Disable Time
SP207EHDS/08
All transmitter outputs loaded
with 3KΩ to ground
V
CC
= 0V; V
OUT
= +2V
Infinite duration, V
OUT
= 0V
V
CC
= 5V, T
A
= +25°C
V
CC
= 5V, T
A
= +25°C
V
CC
= +5V
V
IN
=+15V; T
A
= +25°C
TTL–to–RS-232
RS-232–to–TTL
C
L
= 50pF, R
L
= 3–7KΩ;
T
A
= +25°C; from +3V
C
L
= 2,500pF, R
L
= 3KΩ;
measured from +3V to –3V
or –3V to +3V
500
TBD
TBD
400
250
SP207EH Series High Performance RS232 Transceivers
© Copyright 2000 Sipex Corporation
2
SPECIFICATIONS
V
CC
at nominal ratings; 0.1µF charge pump capacitors; T
MIN
to T
MAX
, unless otherwise noted.
PARAMETER
POWER REQUIREMENTS
V
CC
SP207EH
All other parts
I
CC
MIN.
TYP.
MAX.
UNIT
CONDITIONS
4.75
4.50
5.00
5.00
3
15
1
5.25
5.50
6
Volts
Volts
mA
mA
µA
T
A
= +25°C
No load; V
CC
=
±10%
All transmitters R
L
= 3KΩ
T
A
= +25°C
Shutdown Current
10
ENVIRONMENTAL AND MECHANICAL
Operating Temperature
Commercial, –C
0
+70
°C
Extended, –E
–40
+85
°C
Storage Temperature
–65
+125
°C
Package
–A
Shrink (SSOP) small outline
–T
Wide (SOIC) small outline
–P
Narrow (PDIP) Plastic Dual-In-Line
Transmitter Output @ 240Kbps R
L
= 3KΩ, C
L
= 1,000pF
Transmitter Output @ 500Kbps R
L
= 3KΩ, C
L
= 1,000pF
SP207EHDS/08
SP207EH Series High Performance Transceivers
© Copyright 2000 Sipex Corporation
3
PINOUT
T
3
OUT
T
1
OUT
T
2
OUT
R
1
IN
R
1
OUT
T
2
IN
T
1
IN
GND
V
CC
C
1
+
V+
C
1
–
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
T
4
OUT
R
2
IN
R
2
OUT
T
5
IN
T
5
OUT
T
4
IN
T
3
IN
R
3
OUT
R
3
IN
V–
C
2
–
C
2
+
T
2
OUT
T
1
OUT
R
2
IN
R
2
OUT
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
–
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
T
3
OUT
R
3
IN
R
3
OUT
T
4
IN
T
4
OUT
T
3
IN
T
2
IN
R
4
OUT
R
4
IN
V–
C
2
–
C
2
+
SP207EH
SP208EH
T
3
OUT
T
1
OUT
T
2
OUT
R
2
IN
R
2
OUT
T
2
IN
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
–
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
T
4
OUT
R
3
IN
R
3
OUT
SHUTDOWN (SD)
EN
R
4
IN
R
4
OUT
T
4
IN
T
3
IN
R
5
OUT
R
5
IN
V–
C
2
–
C
2
+
T
3
OUT
T
1
OUT
T
2
OUT
R
2
IN
R
2
OUT
T
2
IN
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
–
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
T
4
OUT
R
3
IN
R
3
OUT
SHUTDOWN (SD)
EN
R
4
IN
R
4
OUT
T
4
IN
T
3
IN
R
5
OUT
R
5
IN
V–
C
2
–
C
2
+
SP211EH
SP213EH
SP207EHDS/08
SP207EH Series High Performance RS232 Transceivers
© Copyright 2000 Sipex Corporation
4
FEATURES
As in the original RS-232 multi-channel
products, the
SP207EH Series
high speed
multi-channel RS-232 line transceivers provide
a variety of configurations to fit most designs,
especially high speed applications where +12V
is not available. The
SP207EH Series
is a
superior high speed drop-in replacement to our
previous versions as well as popular industry
standards.
All devices in this series feature low-power
CMOS construction and
Sipex's
proprietary
on-board charge pump circuitry to generate the
+10V RS-232 voltage levels. The ability to
use 0.1µF charge pump capacitors saves
board space and reduces production costs.
The devices in this series provide different
driver/receiver combinations to match any
application requirement.
The
SP211EH
and
SP213EH
models feature a
low–power shutdown mode, which reduces
power supply drain to 1µA. The
SP213EH
includes a Wake-Up function which keeps two
receivers active in the shutdown mode, unless
disabled by the EN pin.
The family is available in 28–pin SO (wide) and
SSOP (shrink) small outline packages. Devices
can be specified for commercial (0°C to +70°C)
and industrial/extended (–40°C to +85°C) oper-
ating temperatures.
THEORY OF OPERATION
The
SP207EH Series
devices are made up of
three basic circuit blocks — 1) transmitter/
driver, 2) receiver and 3) the
SIPEX–propri-
etary charge pump. Each model within the
Series incorporates variations of these circuits
to achieve the desired configuration and
performance.
V
CC
= +5V
Charge–Pump
The charge pump is a
Sipex–patented
design
(5,306,954) and uses a unique approach
compared to older less–efficient designs. The
charge pump still requires four external capacitors,
but uses a four–phase voltage shifting technique
to attain symmetrical 10V power supplies.
Figure 3a
shows the waveform found on the
positive side of capacitor C
2
, and
Figure 3b
shows
the negative side of capacitor C
2
. There is a
free–running oscillator that controls the four
phases of the voltage shifting. A description of
each phase follows.
Phase 1
— V
SS
charge storage —During this phase of the
clock cycle, the positive side of capacitors C
1
and C
2
are initially charged to +5V. C
l+
is then
switched to ground and the charge in C
1–
is
transferred to C
2–
. Since C
2+
is connected to
+5V, the voltage potential across capacitor C
2
is
now 10V.
Phase 2
— V
SS
transfer — Phase two of the clock
connects the negative terminal of C
2
to the V
SS
storage capacitor and the positive terminal of C
2
to ground, and transfers the generated –l0V to
C
3
. Simultaneously, the positive side of capacitor
C
1
is switched to +5V and the negative side is
connected to ground.
Phase 3
— V
DD
charge storage — The third phase of the
clock is identical to the first phase — the charge
transferred in C
1
produces –5V in the negative
terminal of C
1
, which is applied to the negative
side of capacitor C
2
. Since C
2+
is at +5V, the
voltage potential across C
2
is l0V.
+5V
C
1
+
–
C
4
+
–
+
C
2
+
–
–
V
DD
Storage Capacitor
V
SS
Storage Capacitor
–5V
–5V
C
3
Figure 1. Charge Pump — Phase 1
SP207EHDS/08
SP207EH Series High Performance Transceivers
© Copyright 2000 Sipex Corporation
5
