RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated
package. This HBT amplifier is made with InGaP on GaAs device technology and
fabricated with MOCVD for an ideal combination of low cost and high reliability. This
product is well suited for use as a driver stage in macro/micro-cell infrastructure
equipment or as the final output stage in pico-cell infrastructure equipment. It can
run from a 3V to 6V supply. It is prematched to ~5 on the input for broadband
performance and ease of matching at the board level. It features an input power
detector, on/off power control, ESD protection, excellent over-
Optimum Technology
all robustness and a hand reworkable and thermally enhanced
Matching® Applied
SOF-26 package. This product is RoHS and WEEE compliant.
GaAs HBT
GaAs MESFET
p
V c c = 5V
Features
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Functional Block Diagram
SZ P-2026
SPB-2026
RFIN
A c tiv e
Bias
V bias = 5V
Pow er
Up/Dow n
Control
Parameter
Small Signal Gain
NE
W
Min.
12.2
12.1
Specification
Typ.
13.6
13.7
13.6
33.9
33.8
32.8
-49.0
-45.0
-48.0
-55.0
-55.0
-55.0
-45.0
DE
SI
GN
RFOUT
Pow er
Detec tor
Max.
15.2
15.1
Unit
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
dBc
dBc ACP
dBc ACP
dBc ACP
dBc ACP
dB
dB
dB
V
°C/W
mA
mA
uA
S
P
1dB
=33.8dBm at 5V,
1960MHz
ACP=-45dBc with 25dBm
Channel Power at 1960MHz
On-Chip Input Power Detector
Low Thermal Resistance
Package
Power Up/Down Control <1s
Robust Class 1C ESD
Macro/Micro-Cell Driver
Stage
Pico-Cell Output Stage
GSM, CDMA, TDSCDMA,
WCDMA
Single and Multi-Carrier Appli-
cations
Applications
Condition
1842MHz
1960MHz
2140MHz
1842MHz
1960MHz
2140MHz
1842MHz, 22dBm per tone, 1MHz spacing
1960MHz, 22dBm per tone, 1MHz spacing
2140MHz, 22dBm per tone, 1MHz spacing
1842MHz, tested with 64 Channels, FWD, 23dBm
1960MHz, tested with 64 Channels, FWD, 23dBm
2140MHz, tested with 64 Channels, FWD, 23dBm
1842MHz, 1960MHz, and 2140MHz. Tested with
64 Channels, FWD, 25dBm.
1930MHz to 1990MHz
1930MHz to 1990MHz
1960MHz
CW P
OUT
=13dBm to 33dBm
junction - lead
V
CC
=5V
V
PC
=5V
V
CC
=5V, V
PC
=0V
Output Power at 1dB Compression
Third Order Supression
WCDMA Channel Power
FO
R
31.3
-42.0
NO
T
-48.0
WCDMA Channel Power
Input Return Loss
Output Return Loss
Noise Figure
Voltage Range
11.0
9.0
14.0
12.0
5.2
0.85 to 1.4
12.0
445
2.1
6.2
Thermal Resistance
Quiescent Current
380
500
100
Power up Control Current
V
CC
Leakage Current
Test Conditions: V
CC
=5V, I
CQ
=445mA Typ., T
L
=25°C, Z
S
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
