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SPI-335-34F

Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.14-0.08mA, Rectangular, Surface Mount, DIP-4

器件类别:传感器    传感器/换能器   

厂商名称:SANYO

厂商官网:http://www.semic.sanyo.co.jp/english/index-e.html

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器件参数
参数名称
属性值
Reach Compliance Code
unknown
Is Samacsys
N
其他特性
0.50V VCE, 10NA DARK CURRENT
主体宽度
2.7 mm
主体高度
1.5 mm
主体长度或直径
3.4 mm
最大测量范围(毫米)
1 mm
最小测量范围(毫米)
1 mm
安装特点
SURFACE MOUNT
最大工作电流
10 mA
输出范围
0.14-0.08mA
输出类型
ANALOG CURRENT
封装形状/形式
RECTANGULAR
响应时间
5 µs
传感器/换能器类型
LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
最大供电电压
1.6 V
最小供电电压
1 V
表面贴装
YES
端接类型
SOLDER
Base Number Matches
1
文档预览
Ordering number : EN6029
SPI-335-34
Infrared LED
SPI-335-34
Ultraminiature photoreflector
(single-transistor type)
Features
Infrared LED plus Phototransistor (single)
DIP type
Compact type : 3.4 (L)
!
2.7 (W)
!
1.5 (H) mm
Visible light cut type
Lead length : (L=3.5mm)
Absolute Maximum Ratings at Ta=25
°
C, 65%RH
Parameter
Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Curren
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
*1
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Tsol
Rating
50
5
70
20
5
20
70
- to +80
-20
- to +100
-40
260
Unit
mA
V
mW
V
V
mA
mW
°C
°C
°C
Input LED
Output
Phototransistor
*1
Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower case edge.
Electro-Optical Characteristics at Ta=25
°
C, 65%RH
Parameter
Forward Voltage
Reverse Current
Dark Current
Collector Output Current
Leakage Current
Collector Emitter
Saturation Voltage
Symbol
V
F
I
R
I
CEO
I
C
I
LEAK
V
CE
(sat)
tr
tf
Condition
I
F
=10mA
V
R
=5V
I
F
=0mA, V
CE
=10V
I
F
=4mA,V
CE
=5V
*1
I
F
=10mA,V
CE
=5V
*2
I
F
=10mA, I
C
=50µA
V
CC
=5V, R
L
=100Ω
I
C
=1mA
Min.
1.0
-
-
-
-
33
-
-
-
-
-
-
-
-
Typ.
1.2
-
-
10
-
-
-
-
-
-
5
5
Max.
1.6
10
200
180
1
0.5
--
--
Unit
V
µA
nA
µA
µA
V
µs
µs
Input
Output
Coupled
Rise Time
Fall Time
*1
Location of reflector is show in Fig. 1.
*2
No reflector
*3
Table of Classification of Collector Output
F
140 to 80
Green
G
100 to 50
White
H
65 to 33
Silver
AL V.E. film
Glass plate (t : 1mm)
Class
E
Ic (µA)
180 to 110
Marking color
Orange
Fig. 1
Location of Reflector
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72199 GI, (MI) No.6029 1/6
SPI-335-34
Package dimensions and Pin connection
As stated in the sttached paper. (No.6029 5/6)
Rank marking of collector output
The bottom of the package is colored following the table of classification of collector output.
A
Lot marking
Color division shall be done as shown in the drawing. (Fig. 2)
Year of even number : Front side
Year of odd number : Back side
Color
Part ‘A’
Part ‘B’
Black
January
July
Blue
February
August
Red
March
September
Green
April
October
Front side
B
Fig. 2
Orange
May
November
Brown
June
December
(1) Temperature
(2) Time
(3) Clearance
: Max. 260°C
: Max. 3sec
: Min. 1mm from the case edge. (Fig. 3)
Fig. 3
PRECAUTIONS
(1) Bending a lead should avoid. However, when bending is necessary, take care the next items.
q
Bending a lead must be done before soldering.
w
Bending a lead must be done in the states of fixing leads and no stress for the regin part. Because it is possible that
stress for the regin part cause troubles such as gold wire breaking and so on.
e
A lead must be bend at intervals of 2mm from the case edge.
r
Do not bend the same position of leads more than twice.
(2) The hole pitch of a circuit board must fit to the lead pitch.
(3) Take core the following when soldering.
q
Do not heat a product under any stress (a twist and so on) to leads.
w
Do not heat a product in the states of operating force to the regin part.
(4) Use the flux which contain no chlorine, have no corrosion and do not need washing.
(5) Be careful that flux or other chemicals do not attach to the luminous surface and passive surface.
1mm
Soldering conditions
No.6029 2/6
SPI-335-34
Pin No.
C 0.6
1
4
Pin Connection
1. Ph. Tr Emitter
2. Ph. Tr Collector
3. LED Cathode
4. LED Anode
1.6
2
3
0.4
4
3
2
1
4.0
3.4
2.7
0.5
0.6
0.5
3.3
1.5
3.5
±
0.5
2.6
M
4 -- 0.2
4 -- 0.4
2.0
0 to 20°
0 to 20°
±
10°
±
10°
Tolerance :
±
0.2
Unit
: mm
g
M : Color marking of Ic class
No.6029 3/6
SPI-335-34
Typical Characteristics
CAUTION
These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Forward Current vs. Ambient Temperature
60
Power Dissipation vs. Ambient Temperature
120
(Rating)
Power Dissipation P (mW)
(Rating)
50
100
Forward Current IF (mA)
40
80
30
60
20
40
10
20
0
--25
0
25
50
75
100
0
--25
0
25
50
75
100
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Forward Current vs. Forward Voltage
500
500
Collector vs. Forward Current
VCE=5V
Ta=25°C
Collector Current IC (µA)
400
Forward Current IF (mA)
100
50
Ta=75°C
50°C
25°C
0°C
--25°C
300
10
5
200
100
1
0
0.5
1
1.5
2
0
0
4
8
12
16
20
Forward Voltage VF (V)
Forward Current IF (mA)
Collector Current vs. Collector-emitter Voltage
1000
Relative Collector Current vs. Ambient Temperature
140
Ta=25°C
Collector Current IC (µA)
800
Relative Collector Current (%)
IF=10mA
VCE=5V
120
600
IF=20mA
15mA
100
400
80
10mA
200
5mA
0
0
5
10
60
40
--25
0
25
50
75
100
Collector-emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
No.6029 4/6
SPI-335-34
Typical Characteristics
CAUTION
These numerical value show the electrical and optical characteristics of this product, and not assure this contents.
Collector-emitter Saturation Voltage vs.
Ambient Temperature
0.24
Collector-emitter Saturation Voltage VCE (sat) (V)
Collector Dark Current vs. Ambient Temperature
10-6
5
0.22
Collector Dark Current ICEO (A)
IF=10mA
IC=50µA
VCE=10V
10-7
5
0.20
10-8
5
0.18
10-9
5
0.16
0.14
--25
0
25
50
75
100
10-10
--25
0
25
50
75
100
Ambient Temperature Ta (°C)
Ambient Temperature Ta (°C)
Response Time vs. Load Resistance
1000
500
Test Circuit for Response Time
IFP=20mA
VCC=5V
Ta=25°C
tf
IFP
VCC
IFP
Vout
RD
RL
90%
Vout
10%
tr
tf
tr
Response (µS)
100
50
10
5
1
0.1
0.5
1
5
10
50
100
Load Resistance RL (kΩ)
Relative Collector Current vs. Distance
120
120
Relative Collector Current vs.
PPC paper Moving Distance
r2
IF=10mA,VCE=5V
Ta=25°C,d=1mm
0
Relative Collector Current (%)
Relative Collector Current (%)
100
IF=10mA
VCE=5V
Ta=25°C
d
100
80
80
r1
r1
0
+
+
60
60
40
40
20
20
0
0
1
2
3
4
5
0
--4
--2
0
2
4
r2
6
Distance between sensor and Ar evaporation d (mm)
PPC paper Moving Distance
r
(mm)
No.6029 5/6
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参数对比
与SPI-335-34F相近的元器件有:SPI-335-34H、SPI-335-34G、SPI-335-34E。描述及对比如下:
型号 SPI-335-34F SPI-335-34H SPI-335-34G SPI-335-34E
描述 Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.14-0.08mA, Rectangular, Surface Mount, DIP-4 Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.06-0.03mA, Rectangular, Surface Mount, DIP-4 Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.10-0.05mA, Rectangular, Surface Mount, DIP-4 Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.18-0.11mA, Rectangular, Surface Mount, DIP-4
Reach Compliance Code unknown unknown unknown unknown
其他特性 0.50V VCE, 10NA DARK CURRENT 0.50V VCE, 10NA DARK CURRENT 0.50V VCE, 10NA DARK CURRENT 0.50V VCE, 10NA DARK CURRENT
主体宽度 2.7 mm 2.7 mm 2.7 mm 2.7 mm
主体高度 1.5 mm 1.5 mm 1.5 mm 1.5 mm
主体长度或直径 3.4 mm 3.4 mm 3.4 mm 3.4 mm
最大测量范围(毫米) 1 mm 1 mm 1 mm 1 mm
最小测量范围(毫米) 1 mm 1 mm 1 mm 1 mm
安装特点 SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
最大工作电流 10 mA 10 mA 10 mA 10 mA
输出范围 0.14-0.08mA 0.06-0.03mA 0.10-0.05mA 0.18-0.11mA
输出类型 ANALOG CURRENT ANALOG CURRENT ANALOG CURRENT ANALOG CURRENT
封装形状/形式 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
响应时间 5 µs 5 µs 5 µs 5 µs
传感器/换能器类型 LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
最大供电电压 1.6 V 1.6 V 1.6 V 1.6 V
最小供电电压 1 V 1 V 1 V 1 V
表面贴装 YES YES YES YES
端接类型 SOLDER SOLDER SOLDER SOLDER
Base Number Matches 1 1 1 1
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