SPP24N60CFD
CoolMOS
TM
Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
Product Summary
V
DS
@ Tjmax
R
DS(on),max
I
D
650
V
0.185
"
21.7
PG-TO220
A
• Qualified for industrial grade applications according to JEDEC
1)
• CoolMOS CFD designed for
• Softswitching PWM Stages
• LCD & CRT TV
Type
SPP24N60CFD
Package
PG-TO220
TO-220
Marking
24N60CFD
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
2),3)
Avalanche current, repetitive
2),3)
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
dv /dt
di /dt
V
GS
I
D
=21.7A,
V
DS
=480V,
T
j
=125°C
I
S
=21.7A,
V
DS
=480 V,
T
j
=125°C
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P
tot
T
j
,
T
stg
M3 & M3.5 screws
T
C
=25 °C
T
C
=25 °C
I
D
=10A,
V
DD
=50 V
I
D
=20A,
V
DD
=50 V
Value
21.7
13.7
55
780
1
20
80
40
600
±20
±30
240
-55 ... 150
60
W
°C
Ncm
A
V/ns
V/ns
A/µs
V
mJ
Unit
A
Rev. 1.3
page 1
2009-12-01
SPP24N60CFD
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature, wave
soldering only allowed at leads
R
thJC
R
thJA
leaded
-
-
-
-
0.52
62
K/W
Values
typ.
max.
Unit
T
sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
(BR)DS
V
GS(th)
V
GS
=0 V,
I
D
=21.7 A
V
DS
=V
GS
,
I
D
=1.2 mA
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=15.4 A,
T
j
=25 °C
V
GS
=10 V,
I
D
=15.4 A,
T
j
=150 °C
Gate resistance
Transconductance
R
G
g
fs
f
=1 MHz, open drain
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=15.4 A
600
-
3
-
700
4
-
-
5
V
Zero gate voltage drain current
I
DSS
-
2.5
-
µA
-
-
-
2600
-
0.15
-
100
0.185
nA
"
-
-
-
0.42
0.8
14.0
-
-
-
S
Rev. 1.3
page 2
2009-12-01
SPP24N60CFD
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
4)
Effective output capacitance, time
related
5)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=480 V,
I
D
=21.7 A,
V
GS
=0 to 10 V
-
-
-
-
15
67
110
7.3
-
-
143
-
V
nC
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0 V,
V
DS
=0 V
to 480 V
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
V
DD
=400 V,
V
GS
=10 V,
I
D
= 21.7A,
R
G
=6.8
"
-
-
-
-
-
188
50
24
100
9
-
-
-
-
-
ns
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
3160
900
34
103
-
-
-
-
pF
Values
typ.
max.
Unit
1)
J-STD20 and JESD22
Pulse width
t
p
limited by
T
j,max
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=E
AR
*f.
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
2)
3)
4)
5)
Rev. 1.3
page 3
2009-12-01
SPP24N60CFD
Parameter
Symbol Conditions
min.
Reverse Diode
Diode continuous forward current
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
I
S
T
C
=25 °C
I
S,pulse
V
SD
t
rr
Q
rr
I
rrm
V
R
=480 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
V
GS
=0 V,
I
F
=I
S
,
T
j
=25 °C
-
-
-
-
-
-
1.0
140
0.9
11
55
1.2
-
-
-
V
ns
µC
A
-
-
21.7
A
Values
typ.
max.
Unit
Rev. 1.3
page 4
2009-12-01
SPP24N60CFD
1 Power dissipation
P
tot
=f(T
C
)
2 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
250
10
2
limited by on-state
resistance
1 µs
200
10 µs
100 µs
10
1
1 ms
150
P
tot
[W]
I
D
[A]
DC
10 ms
100
10
0
50
0
0
40
80
120
160
10
-1
10
0
10
1
10
2
10
3
T
C
[°C]
V
DS
[V]
3 Max. transient thermal impedance
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
D=t
p
/T
10
0
4 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
50
20 V
45
40
10 V
8V
0.5
35
Z
thJC
[K/W]
30
10
-1
I
D
[A]
0.2
25
20
7V
0.1
0.05
0.02
0.01
single pulse
15
6.5 V
10
6V
5
0
10
-4
10
-3
10
-2
10
-1
0
5
10
5V
5.5 V
10
-2
10
-5
15
20
t
p
[s]
V
DS
[V]
Rev. 1.3
page 5
2009-12-01
