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SPS620

Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

器件类别:模拟混合信号IC    触发装置   

厂商名称:Hutson Industries

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器件参数
参数名称
属性值
包装说明
POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code
unknown
外壳连接
ANODE
配置
SINGLE
关态电压最小值的临界上升速率
200 V/us
最大直流栅极触发电流
25 mA
最大直流栅极触发电压
2 V
最大维持电流
50 mA
JESD-30 代码
O-MUPM-D2
最大漏电流
1 mA
通态非重复峰值电流
200 A
元件数量
1
端子数量
2
最大通态电流
20000 A
最高工作温度
110 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
认证状态
Not Qualified
最大均方根通态电流
20 A
重复峰值关态漏电流最大值
1000 µA
断态重复峰值电压
600 V
重复峰值反向电压
600 V
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
触发设备类型
SCR
Base Number Matches
1
文档预览
MAXIMUM RATINGS
REPETITIVE PEAK OFF-STATE VOLTAGE AND
REPETITIVE PEAK REVERSE VOLTAGE GATE OPEN,
AND TJ = 110° C
RMS ON-STATE CURRENT AT TC = 80º C AND
CONDUCTION ANGLE OF 360º
PEAK SURGE (NON-REPETITIVE)
ON-STATE CURRENT, ONE-CYCLE,
AT 50HZ OR 60HZ
PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.
PEAK GATE - POWER DISSIPATION AT IGT < IGTM
AVERAGE GATE - POWER DISSIPATION
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE, TJ
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT GATE OPEN,
TC = 110° C VDRM & VRRM = MAX. RATING
MAXIMUM ON - STATE VOLTAGE, (PEAK)
AT TC = 25° C AND IT = RATED AMPS
DC HOLDING CURRENT, GATE
OPEN AND TC = 25° C
CRITICAL RATE-OF-RISE OF OFF-
STATE VOLTAGE, GATE OPEN, TC = 110° C
DC GATE-TRIGGER CURRENT FOR ANODE
VOLTAGE = 12VDC, RL = 60
AND AT TC = 25° C
DC GATE - TRIGGER VOLTAGE FOR ANODE
VOLTAGE = 12VDC, RL = 60
AND AT TC = 25° C
GATE-CONTROLLED TURN-ON TIME FOR
TD + TR, IGT = 150 MA AND TC = 25° C
THERMAL RESISTANCE, JUNCTION-TO-CASE
PRESSFIT
STUD MOUNT
ISOLATED - STUD MOUNT
SYMBOL VDRM
VDRM &
VRRM
50
100
200
400
600
DEVICE NUMBERS UNITS
*S020
*S120
*S220
*S420
*S620
20
200
2
20
0.5
*S025
*S125
*S225
*S425
*S625
25
250
2
20
0.5
-40 to +150
-40 to +110
*S040
*S140
*S240
*S440
*S640
40
400
2
20
0.5
VOLT
I
T(RMS)
I
TSM
I
GTM
P
GM
P
G(AV)
T
STG
T
OPER
AMP
AMP
AMP
WATT
WATT
°C
°C
IDRM &
IRRM
VTM
IHO
CRITICAL
dv/dt
I
GT
V
GT
T gt
1.0
1.9
50
200
25
2.0
2.5
1.3
1.8
2.0
1.0
1.5
50
200
25
2.0
2.5
1.3
1.8
2.0
1.0
1.6
50
200
25
2.0
2.5
0.9
1.4
1.6
MA
MAX.
VOLT
MAX.
MA
MAX.
V/µSEC.
MA
MAX.
VOLT
MAX.
µSEC.
°C/WATT
TYP
R
θ
J-C
P
SP
SIP
PRESS FIT
PRESS FIT WITH STUD MOUNT
PRESS FIT WITH ISOLATED STUD MOUNT
WARNING
Isolated stud products should be handled with care. The ceramic used
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.
DO NOT crush, grind or abrade these portions of the thyristors because
the dust resulting from such action may be HARZARDOUS if INHALED.
*Add prefix for package style desired.
SOLID STATE CONTROL DEVICES
44
SOLID STATE CONTROL DEVICES
45
SOLID STATE CONTROL DEVICES
46
SOLID STATE CONTROL DEVICES
47
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