Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A) per leg
Configuration
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
G
1
D
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
G
2
D
1
FEATURES
30
0.0145
0.0175
8
Dual
D
2
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
d
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4920EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
30
± 20
8
7.2
4
32
25
31
4.4
1.4
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJF
LIMIT
110
34
UNIT
°C/W
S12-1860-Rev. C, 13-Aug-12
Document Number: 66724
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4920EY
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 4.5 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
Forward Transconductance
f
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay
Fall Time
c
Pulsed Current
a
Forward Voltage
Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 1.8 A, V
GS
= 0
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 15 V, I
D
= 6.1 A
V
GS
= 0 V
V
DS
= 15 V, f = 1 MHz
-
-
-
-
-
-
2.5
-
-
-
-
-
-
1175
225
85
19.7
3.8
2.9
-
7
10
25
8
-
0.75
1465
280
105
30
-
-
7.5
10
15
37
12
32
1.1
A
V
ns
nC
pF
g
fs
V
DS
= 30 V
V
DS
= 30 V, T
J
= 125 °C
V
DS
= 30 V, T
J
= 175 °C
V
DS
5
V
I
D
= 5 A
I
D
= 6 A
I
D
= 6 A, T
J
= 125 °C
I
D
= 6 A, T
J
= 175 °C
30
1.5
-
-
-
-
30
-
-
-
-
-
-
2.0
-
-
-
-
-
0.016
0.013
-
-
43
-
2.5
± 100
1.0
50
150
-
0.0175
0.0145
0.024
0.028
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 6 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1860-Rev. C, 13-Aug-12
Document Number: 66724
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4920EY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 4 V
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vishay Siliconix
40
32
24
24
16
V
GS
= 3 V
8
16
T
C
= 25 °C
8
T
C
= 125 °C
T
C
= - 55 °C
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Output Characteristics
Transfer Characteristics
100
0.05
g
fs
- Transconductance (S)
80
T
C
= - 55 °C
60
T
C
= 25 °C
40
T
C
= 125 °C
20
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
0.02
V
GS
= 4.5 V
0.01
V
GS
= 10 V
0
0
3
6
9
I
D
- Drain Current (A)
12
15
0
0
8
16
24
32
40
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1500
C
iss
1200
C - Capacitance (pF)
10
I
D
= 6.1 A
V
GS
-
Gate-to-Source
Voltage (V)
8
900
6
V
DS
= 15 V
4
600
300
C
oss
2
0
0
C
rss
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
0
5
10
15
Q
g
- Total
Gate
Charge (nC)
20
Capacitance
Gate Charge
S12-1860-Rev. C, 13-Aug-12
Document Number: 66724
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ4920EY
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.0
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
100
I
D
= 6 A
V
GS
= 10 V
I
S
-
Source
Current (A)
1.7
10
T
J
= 150 °C
1
T
J
= 25 °C
1.4
V
GS
= 4.5 V
1.1
0.1
0.8
0.01
0.5
- 50
0.001
- 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
On-Resistance vs. Junction Temperature
0.15
I
D
= 4.2 A
0.12
R
DS(on)
- On-Resistance (Ω)
Drain Source Breakdown vs. Junction Temperature
0.6
0.3
V
GS(th)
Variance (V)
0
0.09
- 0.3
I
D
= 5 mA
- 0.6
I
D
= 250 μA
- 0.9
0.06
T
J
= 150 °C
0.03
0
0
T
J
= 25 °C
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
- 1.2
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Source Drain Diode Forward Voltage
40
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
38
36
34
32
30
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Threshold Voltage
S12-1860-Rev. C, 13-Aug-12
Document Number: 66724
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
