e. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S11-1529-Rev. A, 08-Aug-11
1
Document Number: 67996
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ465EP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
DS
= - 60 V
V
DS
= - 60 V, T
J
= 125 °C
V
DS
= - 60 V, T
J
= 175 °C
V
DS
-
5 V
I
D
= - 3.5 A
I
D
= - 2.5 A
I
D
= - 3.5 A, T
J
= 125 °C
I
D
= - 3.5 A, T
J
= 175 °C
V
GS
= 0 V
V
GS
= 0 V
V
GS
= - 10 V
V
GS
= - 10 V
V
GS
= - 4.5 V
V
GS
= - 10 V
V
GS
= - 10 V
MIN.
- 60
- 1.5
-
-
-
-
- 12
-
-
-
-
-
-
V
GS
= 0 V
V
DS
= - 30 V, f = 1 MHz
-
-
-
V
GS
= - 10 V
V
DS
= - 30 V, I
D
= - 5 A
f = 1 MHz
V
DD
= - 30 V, R
L
= 6
I
D
- 5 A, V
GEN
= - 10 V, R
g
= 1
-
-
3.5
-
-
-
-
-
I
F
= - 3 A, V
GS
= 0 V
-
TYP.
-
- 2.0
-
-
-
-
-
0.070
0.090
-
-
10
912
100
60
26.5
3.8
5.8
7.18
11
13
36
8
-
- 0.84
MAX.
-
- 2.5
± 100
-1
- 50
- 150
-
0.085
0.115
0.143
0.176
-
1140
125
75
40
-
-
10.8
17
20
54
12
- 25
- 1.2
A
V
ns
nC
pF
S
A
μA
UNIT
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
nA
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
V
DS
= - 15 V, I
D
= - 3.5 A
Source-Drain Diode Ratings and Characteristics
b
Notes
g. Pulse test; pulse width
300 μs, duty cycle
2 %.
h. Guaranteed by design, not subject to production testing.
i. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1529-Rev. A, 08-Aug-11
2
Document Number: 67996
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ465EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
25
V
GS
= 10 V thru 5 V
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
20
25
Vishay Siliconix
15
V
GS
= 4 V
15
10
10
T
C
= 25
°C
5
V
GS
= 3 V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
5
T
C
= 125
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
T
C
= - 55
°C
Output Characteristics
1.5
Transfer Characteristics
20
T
C
= 25
°C
1.2
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
16
T
C
= - 55
°C
0.9
12
T
C
= 125
°C
8
0.6
T
C
= 25
°C
0.3
T
C
= 125
°C
0.0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
T
C
= - 55
°C
4
0
0
2
4
6
I
D
- Drain Current (A)
8
10
Transfer Characteristics
0.5
Transconductance
1500
R
DS(on)
- On-Resistance (Ω)
0.4
1200
C - Capacitance (pF)
0.3
900
C
iss
0.2
V
GS
= 4.5 V
600
0.1
V
GS
= 10 V
300
C
oss
0
0
6
12
18
24
30
I
D
- Drain Current (A)
0
0
C
rss
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
60
On-Resistance vs. Drain Current
Capacitance
S11-1529-Rev. A, 08-Aug-11
3
Document Number: 67996
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJ465EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.1
Vishay Siliconix
I
D
= 5 A
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 3.5 A
1.8
V
GS
= 10 V
8
V
DS
= 30 V
6
1.5
V
GS
= 4.5 V
1.2
4
2
0.9
0
0
6
12
18
24
30
Q
g
- Total
Gate
Charge (nC)
0.6
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
100
0.5
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.4
0.3
0.1
T
J
= 25
°C
0.01
0.2
T
J
= 150
°C
0.1
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
0.9
- 60
On-Resistance vs. Gate-to-Source Voltage
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
0.7
I
D
= 250 μA
V
GS(th)
Variance (V)
0.5
- 64
- 68
0.3
I
D
= 5 mA
- 72
0.1
- 0.1
- 76
- 0.3
- 50 - 25
0
25
50
75
100
125
150
175
- 80
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
S11-1529-Rev. A, 08-Aug-11
4
Document Number: 67996
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
