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SR506

5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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SR502 THRU SR5100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals,
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
CURRENT 5.0Amperes
VOLTAGE 20 to 100 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
0.375(9.5)
0.285(7.2)
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.041 ounce, 1.15 gram
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length(see Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC mothod at rated T
L
)
Maximum instantaneous forward voltage
at 5.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical junction capacitance (Note 3)
Typical thermal resistnce (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
C
J
JA
JL
T
J
T
STG
-65 to +125
-65 to +150
50
500
25.0
8.0
-65 to +150
V
RRM
V
RMS
V
DC
I(
AV
)
SR502
20
14
20
SR503
SR504
40
28
40
SR505
50
35
50
5.0
SR506
SR508 SR5100 Units
80
56
80
100
70
100
Volts
Volts
Volts
Amps
30
21
30
60
42
60
I
FSM
150.0
Amps
V
F
0.55
2.5
0.70
0.85
Volts
25
400
mA
P
F
℃/W
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vrtical P.C.B. mounted, 0.375"(9.5mm) lead length
(3) Measured 1MHz and reverse voltage of 4.0 volts
RATINGS AND CHARACTERISTIC CURVES SR502 THRU SR5100
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
5.0
PEAK FORWARD SURGE
CURRENT(AMPERES)
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
120
150
──
SR502-SR504
- - - SR505-SR5100
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60Hz
100
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
LEAD TEMPERATURE (℃)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT (AMPERES)
T
J
=150℃
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
T
J
=125℃
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
10
T
J
=125℃
1
T
J
=75℃
PULSE WIDTH=300
1% DUTY CYCLE
1
0.1
0.1
T
J
=25℃
──
SR502-SR504
- - - SR505-SR5100
0.01
T
J
=25℃
──
SR502-SR504
- - - SR505-SR5100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
JUNCTION CAPACITANCE(pF)
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
10
1000
1
──
SR502-SR504
- - - SR505-SR5100
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
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参数对比
与SR506相近的元器件有:SR508。描述及对比如下:
型号 SR506 SR508
描述 5 A, 60 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 80 V, SILICON, RECTIFIER DIODE, DO-201AD
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