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SS115LHM2G

DIODE SCHOTTKY 150V 1A SUB SMA

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
二极管类型
肖特基
电压 - DC 反向(Vr)(最大值)
150V
电流 - 平均整流(Io)
1A
不同 If 时的电压 - 正向(Vf
900mV @ 1A
速度
快速恢复 =< 500 ns,> 200mA(Io)
不同 Vr 时的电流 - 反向漏电流
50µA @ 150V
安装类型
表面贴装
封装/外壳
DO-219AB
供应商器件封装
Sub SMA
工作温度 - 结
-55°C ~ 150°C
文档预览
SS12L - SS115L
Taiwan Semiconductor
CREAT BY ART
1A, 20 - 150V Surface Mount Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5A
@ 1.0A
T
J
=25°C
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=100°C
T
J
=125°C
dV/dt
R
θJL
R
θJA
T
J
T
STG
- 55 to +125
I
R
8.0
-
10000
45
100
- 55 to +150
- 55 to +150
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SYMBOL
SS
12L
12L
20
14
20
SS
13L
13L
30
21
30
SS
14L
14L
40
28
40
SS
15L
15L
50
35
50
1
30
SS
16L
16L
60
42
60
SS
19L
19L
90
63
90
SS
10L
100
70
100
SS
A5L
150
105
150
V
V
V
A
A
110L 115L
UNIT
V
F
0.385
0.45
0.43
0.50
0.51
0.55
0.4
6.0
0.58
0.70
0.70
0.80
0.05
-
0.5
0.75
0.90
V
mA
V/μs
°C/W
°C
°C
Document Number: DS_D1409052
Version: P15
SS12L - SS115L
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
RU
RV
RT
MT
RQ
MQ
R3
RF
R2
M2
RH
MH
Note 1: "x" defines voltage from 20V (SS12L) to 150V (SS115L)
PACKING CODE
SUFFIX
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
Sub SMA
1,800 / 7" Plastic reel (8mm tape)
3,000 / 7" Plastic reel (8mm tape)
7,500 / 13" Paper reel (8mm tape)
7,500 / 13" Plastic reel (8mm tape)
10,000 / 13" Paper reel (8mm tape)
10,000 / 13" Plastic reel (8mm tape)
1,800 / 7" Plastic reel (12mm tape)
3,000 / 7" Plastic reel (12mm tape)
7,500 / 13" Paper reel (12mm tape)
7,500 / 13" Plastic reel (12mm tape)
10,000 / 13" Paper reel (12mm tape)
10,000 / 13" Plastic reel (12mm tape)
PACKAGE
PACKING
SS1XL
(Note 1)
H
G
EXAMPLE
PREFERRED
PART NO.
SS16LHRUG
PART NO.
SS16L
PART NO.
SUFFIX
H
PACKING CODE
RU
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
FIG. 2 MAXUMUM FORWARD SURGE CURRENT
40
8.3ms Single Half
Sine-Wave
1.2
AVERAGE FORWARD CURRENT (A)
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
SS12L-SS14L
SS15L-SS115L
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
125
150
LEAD TEMPERATURE (
o
C)
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
INTANTANEOUS REVERSE CURRENT. (uA)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10000
T
J
=100
o
C
INSTANTANEOUS FORWARD CURRENT
(A)
SS13L-SS14L
SS15L-SS16L
1000
10
SS12L
SS115L
100
T
J
=75
o
C
10
1
SS19L-SS110L
1
T
J
=25
o
C
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
Document Number: DS_D1409052
Version: P15
SS12L - SS115L
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
1000
JUNCTION CAPACITANCE (pF)
TRANSIENT THERMAL
IMPEDANCE (°C/W)
100
10
10
f=1.0MHz
Vslg=50mVp-p
1
1
0.1
1
10
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
PACKAGE OUTLINE DIMENSIONS
Sub SMA
DIM.
B
C
D
E
F
G
H
I
J
Unit (mm)
Min
1.70
2.70
0.16
1.23
0.80
3.40
2.45
0.35
0.00
Max
1.90
2.90
0.30
1.43
1.20
3.80
2.60
0.85
0.10
Unit (inch)
Min
0.067
0.106
0.006
0.048
0.031
0.134
0.096
0.014
0.000
Max
0.075
0.114
0.012
0.056
0.047
0.150
0.102
0.033
0.004
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.4
1.2
3.1
1.9
4.3
Unit (inch)
0.055
0.047
0.122
0.075
0.169
MARKING DIAGRAM
P/N
G
YW
F
Document Number: DS_D1409052
= Marking Code
= Green Compound
= Date Code
= Factory Code
Version: P15
SS12L - SS115L
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1409052
Version: P15
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