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SS12

1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 20 V, 硅, 信号二极管, DO-214交流

器件类别:半导体    分立半导体   

厂商名称:SEMTECH_ELEC

厂商官网:http://www.semtech.net.cn

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器件:SS12

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
SMA, 2 PIN
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
MATTE 锡
端子位置
包装材料
塑料/环氧树脂
工艺
SCHOTTKY
结构
单一的
二极管元件材料
最大功耗极限
1.1 W
二极管类型
信号二极管
最大重复峰值反向电压
20 V
最大平均正向电流
1 A
文档预览
SS12 THRU SS110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 20 to 100 V
Forward Current - 1 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• For surface mounted applications
• Metal silicon junction, majority carrier conduction
• Built-in strain relief, ideal for automated placement
• Low power loss, high efficiency.
• High forward surge current capability
Mechanical Data
Case:
SMA (DO-214AC) molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
color band denotes cathode end
Maximum Ratings and Electrical Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, for
capacitive load, derate by 20%
Parameter
Symbols SS12 SS13 SS14 SS15 SS16 SS18 SS110 Unit
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
Method)
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
1)
Typical Thermal Resistance
2)
Operating Junction Temperature Range
Storage Temperature Range
1)
2)
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
S
20
14
20
30
21
30
40
28
40
50
35
50
1
40
60
42
60
80
56
80
100
70
100
V
V
V
A
A
0.55
0.5
6
110
88
- 65 to + 125
0.75
5
90
0.85
V
mA
pF
O
T
A
= 25
O
C
T
A
= 100
O
C
C/W
O
- 65 to + 150
- 65 to + 150
C
C
O
Measured at 1MHz and applied reverse voltage of 4 V D.C.
P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 11/04/2008
SS12 THRU SS110
FIG.1-FORWARD CURRENT DERATING CURVE
Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
AVERAGE FORWARD RECTIFIED
CURRENT, A
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
Single phase, half wave 60Hz,
resistive or inductive load
SS12-SS14
SS15-SS110
PEAK FORWARD SURGE
CURRENT, A
32
24
16
8
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
AMBIENT TEMPERATURE, ( C)
Fig.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT, A
Tj=25
o
C
Fig.4- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT,
MILLAMPERES
10
100
T
J
=100
o
C
10
T
J
=75 C
o
1
1.0
0
T
J
=25 C
0.01
0
o
0.1
SS12-SS14
SS15-SS16
SS18-SS110
20
40
60
80
100
0.01
0
0.2 0.4 0.6
0.8
1.0 1.2 1.4 1.6
PERCENT OF RATED PEAK REVERSE
VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE, V
Fig.5- TYPICAL JUNCTION CAPACITANCE
400
JUNCTION CAPACITANCE,pF
Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
Tj=25 C
100
SS12-SS14
SS15-SS110
200
TRANSIENT THERMAL
IMPEDANCE, C/W
10
20
1
2
0.1
1
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE, V
PULSE DURATION, sec.
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 11/04/2008
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参数对比
与SS12相近的元器件有:SS13、SS14、SS15。描述及对比如下:
型号 SS12 SS13 SS14 SS15
描述 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
状态 ACTIVE ACTIVE ACTIVE CONSULT MFR
二极管类型 信号二极管 信号二极管 信号二极管 信号二极管
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