桂 斯 微 子 限 任 司
林 壯 電 有 責 公
Guilin
Strong
Micro-Electronics
Co.,Ltd.
SS12 THRU SS110
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
DO-214AC
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.067 (1.70)
0.051 (1.30)
0.110(2.80)
0.100(2.54)
0.181(4.60)
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.096(2.42)
0.078(1.98)
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.003
ounce, 0.093 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS12
SS13
SS14
SS15
SS16
SS18 SS110
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
1.0
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
110
0.45
0.55
30.0
0.70
0.5
10.0
90
88.0
-65 to +125
-65 to +150
-65 to +150
5.0
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1
桂 斯 微 子 限 任 司
林 壯 電 有 責 公
Guilin
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
Strong
Micro-Electronics
Co.,Ltd.
RATINGS AND CHARACTERISTIC CURVES SS12 THRU SS110
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
24
0.6
18
0.4
12
0.2
SS12-SS16
SS18-SS110
6
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
50
T
J
=25 C
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD
CURRENT,AMPERES
10.0
10
TJ=100 C
1
1
TJ=75 C
0.1
0.1
SS12-SS14
SS15-SS16
SS18-SS110
0.01
TJ=25 C
0.001
0
20
40
60
80
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
400
200
T
J
=25 C
10
20
1
SS12-SS14
SS15-SS110
2
0.1
1.0
10
100
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
2
