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SS215R5G

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, GREEN, PLASTIC, SMB, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
GREEN, PLASTIC, SMB, 2 PIN
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
LOW POWER LOSS
应用
EFFICIENCY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.95 V
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
50 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
150 V
最大反向电流
100 µA
表面贴装
YES
技术
SCHOTTKY
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
SS22 thru SS215
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.093 g (approximately)
DO-214AA (SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A @ 25℃
I
F
= 2 A @ 100℃
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
SS
22
20
14
20
SS
23
30
21
30
SS
24
40
28
40
SS
25
50
35
50
2
50
SS
26
60
42
60
SS
29
90
63
90
SS
210
100
70
100
SS
215
150
105
150
UNIT
V
V
V
A
A
V
F
0.5
0.4
0.4
0.70
0.65
0.85
0.70
0.1
0.95
0.80
V
I
R
dV/dt
R
θJL
R
θJA
T
J
T
STG
10
-
5
-
10000
24
70
-
5
mA
V/μs
O
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
- 55 to +125
- 55 to +150
- 55 to +150
C
C
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
SS2xx
(Note 1)
R5
Prefix "H"
R4
M4
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xx" defines voltage from 20V (SS22) to 150V (SS215)
EXAMPLE
PREFERRED P/N
SS26 R5
SS26 R5G
SS26HR5
PART NO.
SS26
SS26
SS26
H
AEC-Q101
QUALIFIED
PACKING CODE
R5
R5
R5
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
PEAK FORWARD SURGE CURRENT
(A)
2.5
2.0
1.5
1.0
0.5
0.0
50
60
70
80
90
100
110
120
130
140
150
160
LEAD TEMPERATURE .(
o
C)
RESISTIVE OR
INDUCTIVE LOAD
SS22-SS24
SS25-SS215
50
40
30
20
10
0
1
10
100
8.3ms Single Half Sine
Wave JEDEC Method
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD
a
CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
100
FIG. 4- TYPICALREVERSE CHARACTERISTICS
SS22-SS24
SS25-SS215
INSTANTANEOUS FORWARD
A
CURRENT (A)
10
SS25-SS26
INSTANTANEOUS REVERSE
A
CURRENT (mA)
10
TJ=125℃
1
SS22-SS24
SS29-SS210
1
SS215
PULSE WIDTH=300μs
1% DUTY CYCLE
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
0.1
TJ=75℃
0.01
TJ=25℃
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
f=1.0MHz
Vsig=50mVp-p
JUNCTION CAPACITANCE (pF)
a
100
SS29-SS215
SS22-SS24
SS25-SS26
10
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.95
4.25
3.48
1.99
0.90
5.10
0.10
0.15
Max
2.10
4.75
3.73
2.61
1.41
5.30
0.20
0.31
Unit (inch)
Min
0.077
0.167
0.137
0.078
0.035
0.201
0.004
0.006
Max
0.083
0.187
0.147
0.103
0.056
0.209
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
2.3
2.5
4.3
1.8
6.8
Unit (inch)
0.091
0.098
0.169
0.071
0.268
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: D1307005
Version: H13
SS22 thru SS215
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: D1307005
Version: H13
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