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SS39

3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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SS32 THRU SS310
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· For surface mount applications
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals
CURRENT 3.0Amperes
VOLTAGE 20 to 100 Volts
DO-214AA (SMB)
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.008(0.203)
MAX.
0.220(5.59)
0.200(5.08)
Mechanical Data
· Case : JEDEC SMB(DO-214AA) molded plastic body
· Terminals : Solder Plate, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Weight : 0.003 ounce, 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current 0.375"(9.5mm) lead length(see Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 3.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
JA
T
J
T
STG
V
RRM
V
RMS
V
DC
I(
AV
)
SS32
20
14
20
SS33
30
21
30
SS34
40
28
40
SS35
50
35
50
3.0
SS36
60
42
60
SS38
80
56
80
SS39 SS310 Units
90
63
90
100
70
100
Volts
Volts
Volts
Amps
I
FSM
70.0
Amps
V
F
0.55
0.75
2.0
20
17
-50 to +125
-65 to +150
0.85
Volts
mA
℃/W
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance junction to ambient
RATINGS AND CHARACTERISTIC CURVES SS32 THRU SS310
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
3.0
2.5
32
SS
FIG.2-TYPICAL FORWARDCHARACTERISTICS
50
35
SS
INSTANTANEOUS FORWARD CURRENT,(A)
2.0
1.5
1.0
0.5
0
20
40
60
0
S31
-S
SS
32
3. 0
1. 0
80
100
120
140
160
180
200
AMBIENT TEMPERATURE (
o
C)
SS
38
0. 1
FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
100
80
60
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
.0 1
.1
.3
.5
.7
-S
S3
10
SS
35
-S
S3
6
-S
S3
4
S34
-S
10
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.9
1 .1
1 .3
1 .5
FORWARD VOLTAGE,(V)
40
20
0
1
5
10
50
100
FIG.5 - TYPICAL REVERSECHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
700
JUNCTION CAPACITANCE,(pF)
600
500
400
300
200
100
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
10
1.0
Tj=75 C
.1
Tj=25 C
.01
0
20
40
60
80
100
120
140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE(%)
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参数对比
与SS39相近的元器件有:SS310、SS36、SS38。描述及对比如下:
型号 SS39 SS310 SS36 SS38
描述 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AC
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