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SS8050

Complimentary to SS8550

厂商名称:MAKO

厂商官网:http://www.makosemi.hk

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Plastic-Encapsulate Transistors
FEATURES
Complimentary to SS8550
SS8050
unless otherwise noted)
(NPN)
Marking :
Parameter
Y1
Symbol
V
CBO
V
CEO
V
EBO
I
C
MAXIMUM RATINGS (TA=25
Value
40
25
5
1500
300
150
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
P
C
T
J
Tstg
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
VCBO
VCEO
VEBO
ICB
O
ICEO
IEBO
hFE(1)
Test
conditions
Min
40
25
5
Typ
Max
Unit
V
V
V
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE=100μA, IC=0
VCB=40V, IE=0
VCB=20V, IE=0
VEB= 5V, IC=0
VCE=1V, IC= 100mA
VCE=1V, IC= 800mA
IC=800mA, IB= 80mA
IC=800mA, IB= 80mA
VCE=10V, IC= 50mA
f=30MHz
0.1
0.1
0.1
120
40
0.5
1.2
100
400
μA
μA
μA
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
V
V
MHz
fT
CLASSIFICATION OF
h
FE
L
120-200
H
200-350
J
300-400
Rank
Range
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
Plastic-Encapsulate Transistors
SS8050
Typical Characteristics
0.5
1000
V
CE
= 1V
I
B
= 3.0mA
I
C
[A], COLLECTOR CURRENT
0.4
I
B
= 2.5mA
0.3
h
FE
, DC CURRENT GAIN
100
I
B
= 2.0mA
I
B
= 1.5mA
0.2
10
I
B
= 1.0mA
0.1
I
B
= 0.5mA
1
0.1
0
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
V
CE
= 1V
V
BE
(sat)
1000
I
C
[mA], COLLECTOR CURRENT
10
100
1000
10
100
1
V
CE
(sat)
10
0.1
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1000
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
V
CE
= 10V
C
ob
[pF], CAPACITANCE
100
100
10
10
1
1
10
100
1
1
10
100
400
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2
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