SSF11NS60F
Main Product Characteristics:
V
DSS
R
DS
(on)
I
D
600V
0.36Ω (typ.)
11A
TO220F
Marking and pin
Assignment
Schematic diagram
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description:
The SSF11NS60F series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
I
D
@ TC = 25°
C
I
D
@ TC = 100°
C
I
DM
P
D
@TC = 25°
C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.5mH
Avalanche Current @ L=22.5mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
32.8
0.26
600
± 30
281
5
-55 to +150
W
W/°
C
V
V
mJ
A
°
C
A
Units
©
Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 1 of 8
SSF11NS60F
Thermal Resistance
Symbol
R
θJC
R
θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t
≤ 10s)
④
Typ.
—
—
Max.
3.8
80
Units
℃/W
℃/W
Electrical Characterizes
@T
A
=25℃
unless otherwise specified
Symbol
V
(BR)DSS
R
DS(on)
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Min.
600
—
—
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.36
0.88
—
2.46
—
—
—
—
Max.
—
0.41
—
4
—
1
50
100
-100
—
—
—
—
—
—
—
—
—
—
pF
ns
nC
Units
V
Ω
Conditions
V
GS
= 0V, ID = 250μA
V
GS
=10V,I
D
= 5.5A
T
J
= 125℃
V
DS
= V
GS
, I
D
= 250μA
T
J
= 125℃
V
DS
=600V,V
GS
= 0V
T
J
= 125°
C
V
GS
=30V
V
GS
= -30V
I
D
= 11A,
V
DS
=480V,
V
GS
= 10V
V
GS
=10V, VDS=300V,
R
L
=54.5Ω,
R
GEN
=4.7Ω
ID=5.5A
V
GS
= 0V
V
DS
= 50V
ƒ = 600KHz
V
GS(th)
Gate threshold voltage
V
μA
I
DSS
Drain-to-Source leakage current
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
nA
28.41
6.64
12.34
12.85
9.45
30.40
6.30
824.8
78.06
2.75
Source-Drain Ratings and Characteristics
Symbol
I
S
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
—
—
—
—
Typ.
—
—
—
Max.
11
Units
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
S
=11A, V
GS
=0V
T
J
= 25° I
F
=11A, di/dt =
C,
100A/μs
I
SM
V
SD
t
rr
Q
rr
44
1.5
—
—
A
V
ns
uC
313
2.97
©
Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 2 of 8
SSF11NS60F
Test circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated
continuous current based on maximum allowable junction temperature.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°
C
©
Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 3 of 8
SSF11NS60F
Typical electrical and thermal characteristics
Figure 1:
Power dissipation
Figure 2.
Typ. Gate to source cut-off voltage
Figure 3.
Typ. gate charge
Figure 4:
Typ. Capacitances
©
Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 4 of 8
SSF11NS60F
Typical electrical and thermal characteristics
Figure 5.
Drain-source breakdown voltage
Figure 6.
Drain-source on-state resistance
©
Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 5 of 8
Microchip MCU
