SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SSG42N60
SERIES
50 AMP
600 VOLTS
FAST
POWER IGBT
APPLICATION NOTES:
•
600V IGBT Technology
• Positive Temperature Coefficient for Ease of
Paralleling
• High Current Switching for Motor Drives and
Inverters
• Low Saturation Voltage at High Currents.
• Low Switching Losses.
• High Short Circuit Capability
• MOS Input, Voltage Controlled.
• Ultra Fast Free Wheeling Diodes
• Hermetic Sealed Construction.
• TX, TXV, and S-Level Screening Available.
DESIGNER'S DATA SHEET
Part Number /Ordering Information
SSG42N60 N _ TX
Screening
2/
:
_ = Not Screened
TX = TX Level
TXV = TXV Level
S
= Space Level
Lead Bend
3/4/
_ = Straight
UB = Up Bend
DB = Down Bend
Package:
3/
N = TO-258, Isolated
P = TO-259, Isolated
S2 = SMD2
1/
MAXIMUM RATINGS
Collector-Emitter Voltage
Continuous Collector Current
Average Diode Current
Peak Collector Current
Gate Emitter Voltage
Operating and Storage Temperature
Total Device Dissipation
@ T
C
= 25
o
C
Thermal Resistance,
Junction to Case
TO-258 (N)
N, P
S2
TO-259 (P)
@ T
C
= 25
o
C
@ T
C
= 90
o
C
@ T
C
= 25
o
C
SYMBOL
V
CEO
I
C
I
O
I
C(pk)
I
IFSM
V
GE
T
J,
T
STG
P
D
R
θ
JC
SMD2 (S2)
VALUE
600
70
42
40
140
300
E
20
-65 to +200
200
0.8
0.7
UNITS
Volts
Amps
Amps
Volts
o
C
W
o
C/W
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #:
TG0002A
SSG42N60
SERIES
ELECTRICAL CHARACTERISTICS
5/
Collector - Emitter Breakdown Voltage
(V
GE
= 0V, I
C
= 2mA)
Collector - Emitter Saturation Voltage
(V
GE
= 15V, I
C
= 50A)
Gate - Emitter Threshold Voltage
(V
GE
= V
CE
, I
C
= 1mA)
Zero Gate Voltage Collector Current
(V
CE
= 600V, V
GE
= 0V)
Gate - Emitter Leackage Current
(V
GE
= 30V, V
CE
= 0V)
Input Capacitance
(V
CE
= 25V, V
GE
= 0V, f = 1MHz)
Output Capacitance
(V
CE
= 25V, V
GE
= 0V, f = 1MHz)
Reverse Transfer Capacitance
(V
CE
= 25V, V
GE
= 0V, f = 1MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(V
CC
= 400V, I
C
= 50A
DC
,
V
GE
= 15 / 0V, R
G
= --Ω,
t
P
= 10µsec, Duty Cycle
≤
1%
T
j
= 150
o
C)
I
F
= 20A
I
F
= 40A
T
J
= 25
o
C
T
J
= 100
o
C
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SYMBOL
V
(BR)CES
V
CE (SAT)
V
GE (th)
I
CES
I
GES
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
F
t
RR
MIN
600
-
3
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
2
4
-
-
-
2750
250
50
25
30
500
360
-
-
MAX
-
2.5
5
150
12
120
-
-
-
-
-
-
-
1.35
1.55
35
UNITS
V
V
V
µ
A
mA
nA
pF
pF
pF
nsec
nsec
nsec
nsec
V
nsec
Reverse Diode Forward Voltage Drop
(V
GE
= 0V)
Reverse Diode Reverse Recovery Time
(I
F
= 0.5A, I
R
= 1A, I
RR
= 0.25A)
NOTES:
Available Part Numbers:
SSG42N60N SSG42N60NDB
SSG42N60P SSG42N60PDB
SSG42N60S2
SSG42N60NUB
SSG42N60PUB
* Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations Available for N and P (TO-258
and TO-259) Packages Only.
5/ All Electrical Characteristics @25
o
C, Unless Otherwise Specified.
PIN ASSIGNMENT
PACKAGE
TO-258
TO-259
SMD2
Collector
Pin1
Pin 1
Pin 1
Emitter
Pin 2
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Pin 3
