1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
SST39SF010A / 020A / 0405.0V 4Mb (x8) MPF memories
Preliminary Specification
FEATURES:
• Organized as 128K x8 / 256K x8 / 512K x8
• Single 5.0V Read and Write Operations
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption:
– Active Current: 10 mA (typical)
– Standby Current: 30 µA (typical)
• Sector-Erase Capability
– Uniform 4 KByte sectors
• Fast Read Access Time:
– 45 and 70 ns
• Latched Address and Data
• Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39SF010A
4 seconds (typical) for SST39SF020A
8 seconds (typical) for SST39SF040
• Automatic Write Timing
– Internal V
PP
Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-pin PLCC
– 32-pin TSOP (8mm x 14mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST39SF010A/020A/040 are CMOS Multi-Purpose
Flash (MPF) manufactured with SST’s proprietary, high
performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39SF010A/020A/040 devices write
(Program or Erase) with a 5.0V power supply. The
SST39SF010A/020A/040 devices conform to JEDEC stan-
dard pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39SF010A/020A/040 devices provide a maximum
Byte-Program time of 20 µsec. These devices use Toggle
Bit or Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed
endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
The SST39SF010A/020A/040 devices are suited for appli-
cations that require convenient and economical updating of
program, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during erase and program than alter-
native flash technologies. The total energy consumed is a
©2001 Silicon Storage Technology, Inc.
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1
function of the applied voltage, current, and time of applica-
tion. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or
Program operation is less than alternative flash technolo-
gies. These devices also improve flexibility while lowering
the cost for program, data, and configuration storage appli-
cations.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39SF010A/020A/040 are offered in 32-pin PLCC and
32-pin TSOP packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1, 2, and 3 for pinouts.
Device Operation
Commands are used to initiate the memory operation func-
tions of the device. Commands are written to the device
using standard microprocessor write sequences. A com-
mand is written by asserting WE# low while keeping CE#
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Preliminary Specification
low. The address bus is latched on the falling edge of WE#
or CE#, whichever occurs last. The data bus is latched on
the rising edge of WE# or CE#, whichever occurs first.
Polling or Toggle Bit methods. See Figure 9 for timing
waveforms. Any commands written during the Sector-
Erase operation will be ignored.
Read
The Read operation of the SST39SF010A/020A/040 is
controlled by CE# and OE#, both have to be low for the
system to obtain data from the outputs. CE# is used for
device selection. When CE# is high, the chip is deselected
and only standby power is consumed. OE# is the output
control and is used to gate data from the output pins. The
data bus is in high impedance state when either CE# or
OE# is high. Refer to the Read cycle timing diagram (Fig-
ure 4) for further details.
Chip-Erase Operation
The SST39SF010A/020A/040 provide Chip-Erase opera-
tion, which allows the user to erase the entire memory
array to the “1s” state. This is useful when the entire device
must be quickly erased.
The Chip-Erase operation is initiated by executing a six-
byte Software Data Protection command sequence with
Chip-Erase command (10H) with address 5555H in the last
byte sequence. The internal Erase operation begins with
the rising edge of the sixth WE# or CE#, whichever occurs
first. During the internal Erase operation, the only valid read
is Toggle Bit or Data# Polling. See Table 4 for the command
sequence, Figure 10 for timing diagram, and Figure 18 for
the flowchart. Any commands written during the Chip-
Erase operation will be ignored.
Byte-Program Operation
The SST39SF010A/020A/040 are programmed on a byte-
by-byte basis. Before programming, one must ensure that
the sector, in which the byte which is being programmed
exists, is fully erased.The Program operation consists of
three steps. The first step is the three-byte-load sequence
for Software Data Protection. The second step is to load
byte address and byte data. During the Byte-Program
operation, the addresses are latched on the falling edge of
either CE# or WE#, whichever occurs last. The data is
latched on the rising edge of either CE# or WE#, whichever
occurs first. The third step is the internal Program operation
which is initiated after the rising edge of the fourth WE# or
CE#, whichever occurs first. The Program operation, once
initiated, will be completed, within 20 µs. See Figures 5 and
6 for WE# and CE# controlled Program operation timing
diagrams and Figure 15 for flowcharts. During the Program
operation, the only valid reads are Data# Polling and Tog-
gle Bit. During the internal Program operation, the host is
free to perform additional tasks. Any commands written
during the internal Program operation will be ignored.
Write Operation Status Detection
The SST39SF010A/020A/040 provide two software means
to detect the completion of a Write (Program or Erase)
cycle, in order to optimize the system Write cycle time. The
software detection includes two status bits: Data# Polling
(DQ
7
) and Toggle Bit (DQ
6
). The End-of-Write detection
mode is enabled after the rising edge of WE# which ini-
tiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchro-
nous with the system; therefore, either a Data# Polling or
Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to con-
flict with either DQ
7
or DQ
6
. In order to prevent spurious
rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If both reads are valid, then the
device has completed the Write cycle, otherwise the rejec-
tion is valid.
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the
device on a sector-by-sector basis. The sector architecture
is based on uniform sector size of 4 KByte. The Sector-
Erase operation is initiated by executing a six-byte-com-
mand load sequence for Software Data Protection with
Sector-Erase command (30H) and sector address (SA) in
the last bus cycle. The sector address is latched on the fall-
ing edge of the sixth WE# pulse, while the command (30H)
is latched on the rising edge of the sixth WE# pulse. The
internal Erase operation begins after the sixth WE# pulse.
The End-of-Erase can be determined using either Data#
Data# Polling (DQ
7
)
When the SST39SF010A/020A/040 are in the internal Pro-
gram operation, any attempt to read DQ
7
will produce the
complement of the true data. Once the Program operation
is completed, DQ
7
will produce true data. The device is
then ready for the next operation. During internal Erase
operation, any attempt to read DQ
7
will produce a ‘0’. Once
the internal Erase operation is completed, DQ
7
will produce
a ‘1’. The Data# Polling is valid after the rising edge of
fourth WE# (or CE#) pulse for Program operation. For Sec-
S71147-02-000 5/01
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©2001 Silicon Storage Technology, Inc.
2
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Preliminary Specification
tor- or Chip-Erase, the Data# Polling is valid after the rising
edge of sixth WE# (or CE#) pulse. See Figure 7 for Data#
Polling timing diagram and Figure 16 for a flowchart.
Product Identification
The product identification mode identifies the device as the
SST39SF040, SST39SF010A, or SST39SF020A and
manufacturer as SST. This mode may be accessed by soft-
ware operations. Users may wish to use the software prod-
uct identification operation to identify the part (i.e., using the
device ID) when using multiple manufacturers in the same
socket. For details, see Table 3 for hardware operation or
Table 4 for software operation, Figure 11 for the software ID
entry and read timing diagram and Figure 17 for the ID
entry command sequence flowchart.
TABLE 1: P
RODUCT
I
DENTIFICATION
Address
Manufacturer’s ID
Device ID
SST39SF010A
SST39SF020A
SST39SF040
0001H
0001H
0001H
B5H
B6H
B7H
T1.2 398
Toggle Bit (DQ
6
)
During the internal Program or Erase operation, any con-
secutive attempts to read DQ
6
will produce alternating 0s
and 1s, i.e., toggling between 0 and 1. When the internal
Program or Erase operation is completed, the toggling will
stop. The device is then ready for the next operation. The
Toggle Bit is valid after the rising edge of fourth WE# (or
CE#) pulse for Program operation. For Sector- or Chip-
Erase, the Toggle Bit is valid after the rising edge of sixth
WE# (or CE#) pulse. See Figure 8 for Toggle Bit timing dia-
gram and Figure 16 for a flowchart.
Data
BFH
0000H
Data Protection
The SST39SF010A/020A/040 provide both hardware and
software features to protect nonvolatile data from inadvert-
ent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of less than 5
ns will not initiate a Write cycle.
V
DD
Power Up/Down Detection: The Write operation is
inhibited when V
DD
is less than 2.5V.
Write Inhibit Mode: Forcing OE# low, CE# high, or WE#
high will inhibit the Write operation. This prevents inadvert-
ent writes during power-up or power-down.
Product Identification Mode Exit/Reset
In order to return to the standard Read mode, the Software
Product Identification mode must be exited. Exit is accom-
plished by issuing the Exit ID command sequence, which
returns the device to the Read operation. Please note that
the software reset command is ignored during an internal
Program or Erase operation. See Table 4 for software com-
mand codes, Figure 12 for timing waveform and Figure 17
for a flowchart.
Software Data Protection (SDP)
The SST39SF010A/020A/040 provide the JEDEC
approved Software Data Protection scheme for all data
alteration operations, i.e., Program and Erase. Any Pro-
gram operation requires the inclusion of a series of three
byte sequence. The three byte-load sequence is used to
initiate the Program operation, providing optimal protection
from inadvertent Write operations, e.g., during the system
power-up or power-down. Any Erase operation requires the
inclusion of six byte load sequence. The SST39SF010A/
020A/040 devices are shipped with the Software Data Pro-
tection permanently enabled. See Table 4 for the specific
software command codes. During SDP command
sequence, invalid commands will abort the device to read
mode, within T
RC
.
©2001 Silicon Storage Technology, Inc.
S71147-02-000 5/01
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3
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Preliminary Specification
F
UNCTIONAL
B
LOCK
D
IAGRAM
X-Decoder
SuperFlash
Memory
Memory Address
Address Buffers & Latches
Y-Decoder
CE#
OE#
WE#
DQ7 - DQ0
398 ILL B1.2
Control Logic
I/O Buffers and Data Latches
SST39SF040
WE#
WE#
WE#
VDD
A12
A15
A16
A18
SST39SF020A
VDD
A12
A15
A16
SST39SF010A
VDD
A12
A15
A16
NC
SST39SF040 SST39SF020A SST39SF010A
NC
SST39SF010A SST39SF020A
A17
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
SST39SF020A SST39SF010A
5
6
7
8
9
10
11
12
13
4
3
2
1
32 31 30
29
28
27
26
25
24
23
22
SST39SF040
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
32-pin PLCC
Top View
21
14 15 16 17 18 19 20
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
398 ILL F02.3
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ5
SST39SF040
DQ1
DQ2
DQ3
DQ4
FIGURE 1: P
IN
A
SSIGNMENTS FOR
32-
PIN
PLCC
©2001 Silicon Storage Technology, Inc.
DQ6
VSS
DQ6
S71147-02-000 5/01
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4
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39SF010A / SST39SF020A / SST39SF040
Preliminary Specification
SST39SF040 SST39SF020A
A11
A9
A8
A13
A14
A17
WE#
VDD
A18
A16
A15
A12
A7
A6
A5
A4
A11
A9
A8
A13
A14
A17
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
SST39SF010A
A11
A9
A8
A13
A14
NC
WE#
VDD
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SST39SF010A
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
SST39SF020A
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
389 ILL F01.1
SST39SF040
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
Standard Pinout
Top View
Die Up
FIGURE 2: P
IN
A
SSIGNMENTS FOR
32-
PIN
TSOP (8
MM
X
14
MM
)
SST39SF040 SST39SF020A SST39SF010A
SST39SF010A SST39SF020A
SST39SF040
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
1
2
3
4
5
32-pin
6
PDIP
7
8
Top View
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VDD
WE#
NC
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VDD
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
398 ILL F02a.2
FIGURE 3: P
IN
A
SSIGNMENTS FOR
32-
PIN
PDIP
©2001 Silicon Storage Technology, Inc.
S71147-02-000 5/01
398
5
