SSTS30100CT/CTF
Main Product Characteristics:
IF
VRRM
T
j
(max)
Vf(typ)
2×
15A
100V
150℃
0.64V
TO220
TO220F
SSTS30100CTF
Schematic Diagram
SSTS30100CT
Features and Benefits:
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
V
RRM
V
R(RMS)
I
F(AV)
I
FSM
I
RRM
T
J
T
stg
Symbol
R
θJC
R
θJC
Symbol
V
R
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
Characterizes
Peak Repetitive Reverse Voltage
Value
100
70
15
30
200
0.5
-55~150
-55~150
Value
TO220
TO220F
Max
Unit
V
0.5
0.55
0.61
V
F
Forward Voltage Drop
0.7
0.45
0.52
0.57
0.64
I
R
Leakage Current
2013.4.23
www.silikron.com
Unit
V
V
A
A
A
A
℃
℃
Unit
℃/W
℃/W
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
Peak Repetitive Reverse Surge Current(Tp=2us)
Maximum operation Junction Temperature Range
Storage Temperature Range
Characterizes
Maximum Thermal Resistance Junction To
Case(per leg)
Characterizes
Reverse Breakdown Voltage
Min
100
Typ
Thermal Resistance
2.3
5.3
Electrical Characterizes
@T
A
=25℃ unless otherwise specified
Test Condition
I
R
=0.5mA
I
F
=5A, T
J
=25℃
I
F
=7.5A, T
J
=25℃
I
F
=10A, T
J
=25℃
I
F
=15A, T
J
=25℃
I
F
=5A, T
J
=125℃
I
F
=7.5A, T
J
=125℃
I
F
=10A, T
J
=125℃
I
F
=15A, T
J
=125℃
V
R
=100V, T
J
=25℃
V
R
=100V, T
J
=125℃
page
1of6
V
V
V
0.8
V
V
V
V
0.7
0.1
20
V
mA
©
Silikron Semiconductor CO., LTD.
Version: 2.3
SSTS30100CT/CTF
I-V Curves:
Figure 1：Typical Forward Characteristics
Figure 2：Typical Capacitance Characteristics
Figure 3：Typical Reverse Characteristics
Figure 4：Forward Current Derating Curve
©
Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page
2of6
SSTS30100CT/CTF
Mechanical Data
：
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Q1
Q2
Q3
Q4
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
-
-
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
-
8.700
-
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
2.900
1.650
0.900
5
0
0
Min
0.173
0.050
0.088
-
0.050
0.030
0.019
0.594
0.346
0.107
0.390
-
0.141
0.055
0.518
0.114
0.065
0.035
5
0
0
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
-
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
-
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.526
0.534
0.29REF
0.118
0.069
0.039
7
0
0
3.000
1.750
1.000
7
0
0
3.100
1.850
1.100
9
0
0
0.122
0.073
0.043
9
0
0
5
5
0
1
0
7
7
0
3
0
9
9
0
5
0
5
5
0
1
0
7
7
0
3
0
9
9
0
5
0
©
Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page
3of6
SSTS30100CT/CTF
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP1
ФP2
ФP3
L
L1
L2
Q1
Q2
b1
b2
b3
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
-
0.500
-
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
o
o
3
5
7
o
43
o
45
o
47
o
1.180
1.280
1.380
0.760
0.800
0.840
-
-
1.420
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
-
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
3
o
43
o
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
5
o
45
o
0.050
0.031
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
-
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
7
o
47
o
0.054
0.033
0.056
©
Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page
4of6
SSTS30100CT/CTF
Ordering and Marking Information
Device Marking: SSTS30100CT&SSTS30100CTF
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 150 º
C
Devices per Unit
Package
Type
TO220
TO220F
Units/ Tubes/Inner
Tube Box
50
50
20
20
Units/Inner
Box
1000
1000
Inner Boxes /
Carton Box
6
6
Units/
Carton Box
6000
6000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
©
Silikron Semiconductor CO., LTD.
2013.4.23
www.silikron.com
Version: 2.3
page
5of6
51单片机
