ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors (Stud Version), 110 A
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with
(Glass-metal seal over 1200 V)
TO-209AC (TO-94)
ceramic insulator
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
T(AV)
110 A
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Typical
TEST CONDITIONS
VALUES
110
T
C
90
175
2700
2830
36.4
33.2
400 to 1600
100
- 40 to 125
V
μs
°C
kA
2
s
A
UNITS
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
ST110S
12
16
1200
1600
1300
1700
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
500
900
20
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 94393
Revision: 17-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 85 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
110
90
175
2700
2830
2270
UNITS
A
°C
A
Sinusoidal half wave,
initial T
J
= T
J
maximum
2380
36.4
33.2
25.8
23.5
364
0.90
0.92
1.79
1.81
1.52
600
1000
kA
2
s
V
kA
2
s
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 350 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 100 A, T
J
= T
J
maximum, dI/dt = 10 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
500
2.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
20
UNITS
V/μs
mA
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94393
Revision: 17-Aug-10
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
180
90
40
2.9
1.8
1.2
10
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
TYP.
5
1
2.0
20
5.0
-
150
-
-
3.0
-
mA
V
mA
MAX.
UNITS
Vishay Semiconductors
W
A
V
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.195
K/W
0.08
15.5 (137)
14 (120)
130
Nm
(lbf · in)
g
UNITS
°C
TO-209AC (TO-94)
Document Number: 94393
Revision: 17-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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ST110SPbF Series
Vishay Semiconductors
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.035
0.041
0.052
0.076
0.126
RECTANGULAR CONDUCTION
0.025
0.042
0.056
0.079
0.127
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Phase Control Thyristors
(Stud Version), 110 A
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
130
130
Maximum Allowable Case Temperature (°C)
ST110S Series
R
thJC
(DC) = 0.195 K/W
Maximum Allowable Case Temperature (°C)
ST110S Series
R
thJC
(DC) = 1.95 K/W
120
120
110
Conduction Angle
110
Conduction Period
100
100
30°
60°
90
30°
60°
90
90°
120°
180°
0
20
DC
90°
120°
180°
120
80
0
20
40
60
80
100
Average On-state Current (A)
80
40 60 80 100 120 140 160 180
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
160
140
120
100
80
180°
120°
90°
60°
30°
RMS Limit
S
R
th
2
0.
3
0.
W
K/
K/
W
0.
4
W
K/
A
W
K/
.1
=0
0.
5
0.
6
K/
W
K/
W
e lt
-D
K/
W
1K
/W
1.2
K/ W
0.8
a
R
60
Conduction Angle
40
20
0
0
20
40
60
80
100
120
25
ST110S Series
T
J
= 125°C
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94393
Revision: 17-Aug-10
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Maximum Average On-state Power Loss (W)
220
200
180
160
140
120
100
RMS Limit
80
Conduction Period
Vishay Semiconductors
DC
180°
120°
90°
60°
30°
A
hS
R
t
0.
3
K/
W
0.5
K/
W
0.6
K/
W
0.8
K/ W
1K
/W
1.2
K/
W
0.4
2
0.
K/
W
W
K/
=
1
0.
W
K/
ta
el
-D
R
60
40
20
0
ST110S Series
T
J
= 125°C
0
20 40
60 80 100 120 140 160 180
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
2400
2200
2000
1800
1600
1400
1200
1000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
2800
2600
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
2400
Initial T
J
= 125°C
No Voltage Reapplied
2200
Rated V
RRM
Reapplied
2000
1800
1600
1400
1200
1000
0.01
ST110S Series
0.1
1
10
ST110S Series
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
1000
100
Tj = 25˚C
Tj = 125˚C
ST110S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Document Number: 94393
Revision: 17-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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