DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
Bulletin I25165/B
ST180S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
International standard case TO-209AB (TO-93)
Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
200A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
ST180S
200
85
314
5000
5230
125
114
400 to 2000
100
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AB (TO-93)
ST180S Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
04
08
ST180S
12
16
18
20
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
1800
2000
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1700
1900
2100
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
30
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
ST180S
200
85
314
5000
5230
4200
4400
Units Conditions
A
°C
A
DC @ 76°C case temperature
t = 10ms
t = 8.3ms
A
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
180° conduction, half sine wave
12
I
2
t
Maximum I
2
t for fusing
125
114
88
81
I
2
√t
Maximum I
2
√t
for fusing
1250
1.08
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Max. (typical) latching current
V
1.14
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
1.14
1.75
600
mA
1000 (300)
T
J
= T
J
max, anode supply 12V resistive load
V
(I >
π
x I
T(AV)
),T
J
= T
J
max.
1.18
2222222222222
I
pk
= 570A, T
J
= 125°C, t
p
= 10ms sine pulse
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
t
q
Typical delay time
Typical turn-off time
ST180S
1000
1.0
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
r
≤
1µs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 300A, T
J
= T
J
max, di/dt = 20A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t
p
= 500µs
µs
100
ST180S Series
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-state Power Loss Characteristics
ST180S Series
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
安防电子
