Bulletin I25234 10/06
ST183CPbF SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
370A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST183C..C
370
55
690
25
4900
5130
120
110
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
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ST183CPbF Series
Bulletin I25234 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
04
ST183C..C
08
800
900
400
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
770
730
600
350
50
V
DRM
50
40
I
TM
180
o
el
660
600
490
270
50
50
55
1220
1270
1210
860
50
V
DRM
-
40
I
TM
100μs
1160
1090
1040
730
50
-
55
5450
2760
1600
800
50
V
DRM
-
40
I
TM
Units
4960
2420
1370
680
50
-
55
V
A/μs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST183C..C
370 (130)
55 (85)
690
4900
5130
4120
4310
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC@ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA s
2
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
I
2
t
Maximum I
2
t for fusing
120
110
85
78
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
1200
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
2
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ST183CPbF Series
Bulletin I25234 10/06
On-state Conduction
Parameter
V
TM
V
T(TO)1
Max. peak on-state voltage
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
ST183C..C
1.80
1.40
1.45
0.67
Units
Conditions
I
TM
= 600A, T
J
= T
J
max, t = 10ms sine wave pulse
p
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
Low level value of forward
slope resistance
m
Ω
0.58
600
1000
mA
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST183C..C
1000
1.1
Min
10
Max
20
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t = 1µs
p
Typical delay time
µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST183C..C
500
40
Units
V/μs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST183C..C
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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ST183CPbF Series
Bulletin I25234 10/06
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
ST183C..C
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units
°C
Conditions
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
ΔR
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.015
0.018
0.024
0.035
0.060
0.016
0.019
0.024
0.035
0.060
Rectangular conduction
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
Single Side Double Side Single Side Double Side
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
18
2
3
3
C
4
08
5
C
6
H
7
K
8
9
1
10
P
11
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- C = Puk Case TO-200AB (A-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
11
- P = Lead Free
dv/dt - t
q
combinations available
dv/dt (V/µs)
10
12
t (µs)
15
q
18
20
20
CN
CM
CL
CP
CK
50
DN
DM
DL
DP
DK
100
EN
EM
EL
EP
EK
200
FN*
FM
FL*
FP
FK
400
HN
HM
HL
HP
HK
*
Standard part number.
All other types available only on request.
4
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ST183CPbF Series
Bulletin I25234 10/06
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
0
40
Maximum Allowable Heatsink T
emperature (°C)
S 183C..C S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.17 K/ W
130
120
110
100
90
80
70
60
50
40
30
20
0
30°
S 183C..C S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.17 K/ W
Conduction Angle
Conduction Period
30°
60°
90°
180°
120°
200
240
60°
90°
120°
180°
DC
50 100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
80
120
160
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
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