Bulletin I25179 rev. C 12/96
ST183S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
195A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST183S
195
85
306
4900
5130
120
110
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AB (TO-93)
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1
ST183S Series
Bulletin I25179 rev. C 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST183S
04
08
400
800
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
570
560
500
340
50
V
DRM
50
60
I
TM
180
o
el
370
360
300
190
50
50
85
900
940
925
760
50
V
DRM
-
60
I
TM
100µs
610
630
610
490
50
-
85
7040
3200
1780
880
50
V
DRM
-
60
I
TM
Units
5220
2280
1200
560
50
-
85
V
A/µs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST183S
195
85
306
4900
5130
4120
4310
Units
A
°C
Conditions
180° conduction, half sine wave
DC @ 74°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
120
110
85
78
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
1200
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
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ST183S Series
Bulletin I25179 rev. C 12/96
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
ST183S
1.80
1.40
1.45
0.67
Units
Conditions
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
t
2
I
H
I
L
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.58
600
1000
mA
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST183S
1000
1.1
Min
10
Max
20
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST183S
500
40
Units
V/µs
mA
Conditions
T
J
= T
J
max., linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST183S
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST183S Series
Bulletin I25179 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
ST183S
-40 to 125
-40 to 150
0.105
0.04
31
(275)
24.5
(210)
Units
°C
Conditions
DC operation
K/W
Nm
(Ibf-in)
Nm
(Ibf-in)
g
See Outline Table
Non lubricated threads
Lubricated threads
Mounting surface, smooth, flat and greased
wt
Approximate weight
Case style
280
TO-209AB (TO-93)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
18
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
- P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16 x 1.5
- Reapplied dv/dt code (for t
q
test condition)
- t
q
code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
dv/dt - t
q
combinations available
dv/dt (V/µs)
10
12
t
q
(µs)
15
18
20
20
CN
CM
CL
CP
CK
50
DN
DM
DL
DP
DK
100
EN
EM
EL
EP
EK
200
FN *
FM
FL *
FP
FK
400
HN
HM
HL
HP
HK
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
*
Standard part number.
All other types available only on request.
4
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ST183S Series
Bulletin I25179 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
(0
.3
9 .5
MI
N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER
10 (0.39)
C.S. 0.4mm 2
RED CATHODE
(0.0006 s.i.)
WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD
C.S. 25mm 2
(0
. 86
)M
IN
.
Fast-on Terminals
AMP. 280000-1
REF-250
+I
210 (8.26)
90 (3.54) MIN.
RED SHRINK
220 (8.66)
+
10 (0.39)
-
WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A *
35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
Microchip MCU
