Bulletin I25176 rev. B 04/00
ST203C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
370A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST203C..C
370
55
700
25
5260
5510
138
126
1000 to 1200
20 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
Document Number: 93670
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1
ST203C..C Series
Bulletin I25176 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST203C..C
10
12
1000
1200
V
RSM
, maximum
non-repetitive peak voltage
V
1100
1300
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
860
840
700
430
50
V
DRM
50
40
I
TM
180
o
el
750
706
580
340
50
50
55
1340
1400
1350
980
50
V
DRM
-
40
I
TM
100µs
1160
1220
1170
830
50
-
55
5620
2940
1750
910
50
V
DRM
-
40
I
TM
Units
5020
2590
1520
780
50
-
55
V
A/µs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST203C..C
370 (140)
55 (85)
700
5260
5510
4420
4630
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
KA
√s
2
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
I t
2
Maximum I t for fusing
2
138
126
98
89
I
√t
2
Maximum I
√t
for fusing
2
1380
t = 0.1 to 10ms, no voltage reapplied
Document Number: 93670
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2
ST203C..C Series
Bulletin I25176 rev. B 04/00
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
Low level value of forward
slope resistance
t
2
ST203C..C Units
1.72
1.17
1.22
0.92
mΩ
0.83
600
1000
mA
V
Conditions
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
High level value of forward
slope resistance
Maximum holding current
Typical latching current
I
H
I
L
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST203C..C Units
1000
0.8
Min
20
Max
30
µs
A/µs
Conditions
T
J
= T
J
max., V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST203C..C Units
500
40
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST203C..C Units
60
10
10
20
V
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
T
J
= T
J
max, t
p
≤
5ms
5
200
3
20
0.25
mA
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max., rated V
DRM
applied
Document Number: 93670
www.vishay.com
3
ST203C..C Series
Bulletin I25176 rev. B 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST203C..C
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
Single Side Double Side
0.015
0.018
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
Rectangular conduction
Single Side Double Side
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
5
4
Voltage code: off
3
C = Ceramic Puk
2
3 = Fast
- Essential part number
1
Thyristor turn Code x 100 = V
20
2
3
3
C
4
12
5
C
6
H
7
H
8
1
9
10
RRM
7
C = Puk Case TO-200AB
-(See Voltage Rating Table)
6
Reapplied dv/dt code (for t(A-PUK)
dv/dt - t
q
combinations available
50
DK
DJ
DH
100
EK
EJ
EH
200
--
FJ *
FH
400
--
--
HH
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
9
code
q
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
dv/dt (V/µs)
20
20
CK
t (µs)
25
CJ
q
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
30
CH
-test
8
t condition)
q
*
Standard part number.
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
All other types available only on request.
- Critical dv/dt:
10
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
Document Number: 93670
www.vishay.com
4
ST203C..C Series
Bulletin I25176 rev. B 04/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
Quote between upper and lower
All dimensions in millimeters (inches)
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
130
120
110
100
90
80
70
60
50
40
0
50
M a x im u m A llo w a b le H e a tsin k T e m p e r a tu re (° C )
Maxim um Allowab le Heatsin k Tem perature (°C)
ST203C..C Series
(Single Side Cooled)
R
thJ-h s
(DC) = 0.17 K/W
1 30
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
50
30 °
ST 2 0 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
thJ-h s
(D C ) = 0 .1 7 K / W
C o ndu ct io n A ng le
Co nd uc tio n P eriod
30°
60°
90°
120°
180°
60°
90 °
120°
180°
DC
100
150
200
250
1 00 15 0 20 0 2 5 0 3 0 0 3 50 4 00
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n -st a te C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
Document Number: 93670
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5
实时操作系统RTOS
