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ST223S04PEM0

Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB

器件类别:模拟混合信号IC    触发装置   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
包装说明
POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code
compliant
其他特性
HIGH SPEED
标称电路换相断开时间
12 µs
配置
SINGLE
最大直流栅极触发电流
200 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-209AB
JESD-30 代码
O-MUPM-H3
JESD-609代码
e0
最大漏电流
40 mA
通态非重复峰值电流
5900 A
元件数量
1
端子数量
3
最大通态电流
220000 A
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
345 A
重复峰值关态漏电流最大值
40000 µA
断态重复峰值电压
400 V
重复峰值反向电压
400 V
表面贴装
NO
端子面层
TIN LEAD
端子形式
HIGH CURRENT CABLE
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
Base Number Matches
1
文档预览
Bulletin I25175 rev. C 12/96
ST223S SERIES
INVERTER GRADE THYRISTORS
Stud Version
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
220A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST223S
220
85
345
5850
6120
171
156
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AB (TO-93)
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1
ST223S Series
Bulletin I25175 rev. C 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
ST223S
04
08
400
800
V
RSM
, maximum
non-repetitive peak voltage
V
500
900
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
40
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
630
630
580
420
50
V
DRM
50
60
I
TM
180
o
el
430
420
370
250
50
50
85
970
1010
1000
860
50
V
DRM
-
60
I
TM
100µs
690
710
680
630
50
-
85
6450
3140
1860
980
50
V
DRM
-
60
I
TM
Units
4850
2280
1310
790
50
-
85
V
A/µs
°C
A
47Ω / 0.22µF
47Ω / 0.22µF
47Ω / 0.22µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST223S
220
85
345
5850
6120
4920
5150
Units
A
°C
Conditions
180° conduction, half sine wave
DC @ 76°C case temperature
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I t
2
Maximum I t for fusing
2
171
156
121
111
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
1710
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
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ST223S Series
Bulletin I25175 rev. C 12/96
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
t
2
I
H
I
L
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum holding current
Typical latching current
ST223S
1.58
1.05
1.09
0.88
Units
Conditions
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.82
600
1000
mA
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST223S
1000
0.78
Min
10
Max
20
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
µs
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST223S
500
40
Units
V/µs
mA
Conditions
T
J
= T
J
max., linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max., rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST223S
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST223S Series
Bulletin I25175 rev. C 12/96
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
R
thCS
T
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque, ± 10%
ST223S
-40 to 125
-40 to 150
0.105
0.04
31
(275)
24.5
(210)
Units
°C
Conditions
DC operation
K/W
Nm
(Ibf-in)
Nm
(Ibf-in)
g
See Outline Table
Non lubricated threads
Lubricated threads
Mounting surface, smooth, flat and greased
wt
Approximate weight
Case style
280
TO-209AB (TO-93)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
22
2
3
3
S
4
08
5
P
6
F
7
N
8
0
9
10
1
2
3
4
5
6
7
8
9
- Thyristor
- Essential part number
- 3 = Fast turn off
- S = Compression bonding Stud
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
- P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16 x 1.5
- Reapplied dv/dt code (for t
q
test condition)
- t
q
code
- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
dv/dt - t
q
combinations available
dv/dt (V/µs)
20
10
CN
12
CM
15
CL
t
q
(µs)
18
CP
20
CK
25
--
30
--
50
DN
DM
DL
DP
DK
--
--
100
EN
EM
EL
EP
EK
--
--
200
FN *
FM
FL *
FP
FK
--
--
400
--
--
HL
HP
HK
HJ
HH
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
*
Standard part number.
All other types available only on request.
4
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ST223S Series
Bulletin I25175 rev. C 12/96
Outline Table
CERAMIC HOUSING
19 (0.75) MAX.
4 (0.16) MAX.
8.5 (0.33) DIA.
(0
.3
9 .5
MI
N.
4.3 (0.17) DIA.
7)
RED SILICON RUBBER
10 (0.39)
C.S. 0.4mm 2
RED CATHODE
(0.0006 s.i.)
WHITE GATE
(0.039 s.i.)
22
FLEXIBLE LEAD
C.S. 25mm 2
(0
. 86
)M
IN
.
Fast-on Terminals
AMP. 280000-1
REF-250
+I
210 (8.26)
90 (3.54) MIN.
RED SHRINK
220 (8.66)
+
10 (0.39)
-
WHITE SHRINK
38.5 (1 .52)
16 (0.63) MAX.
M AX.
27.5 (1.08) MAX. DIA.
27.5 (1.08)
MAX.
SW 32
Case Style TO-209AB (TO-93)
3/4"-16UNF-2A *
35 (1.38) MAX.
All dimensions in millimeters (inches)
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
CERAMIC HOUSING
FLAG TERMINALS
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
13 (0.51)
80 ( 3.15) MAX.
1.5 (0.06) DIA.
38.5 (1.52) MAX.
DIA. 27.5 (1.08) MAX.
27.5 (1.08) MAX.
16 (0.63) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
SW 32
3/4"-16UNF-2A*
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3 (0.12)
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5
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