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ST230C14C1LPBF

Silicon Controlled Rectifier, 780A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AB, METAL, APUK-4

器件类别:模拟混合信号IC    触发装置   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
BUTTON
包装说明
DISK BUTTON, O-MXDB-X4
针数
3
制造商包装代码
A-PUK
Reach Compliance Code
compliant
外壳连接
ISOLATED
标称电路换相断开时间
100 µs
配置
SINGLE
最大直流栅极触发电流
150 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-200AB
JESD-30 代码
O-MXDB-X4
元件数量
1
端子数量
4
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大均方根通态电流
780 A
重复峰值关态漏电流最大值
30000 µA
断态重复峰值电压
1400 V
重复峰值反向电压
1400 V
表面贴装
YES
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
处于峰值回流温度下的最长时间
40
触发设备类型
SCR
文档预览
Bulletin I25162 rev. D 04/03
ST230C..C SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
410A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
case style TO-200AB (A-PUK)
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
ST230C..C
410
55
780
25
5700
5970
163
149
400 to 2000
100
- 40 to 125
www.irf.com
1
ST230C..C Series
Bulletin I25162 rev. D 04/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
ST230C..C
08
12
14
16
18
20
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1400
1600
1800
2000
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1500
1700
1900
2100
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
30
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
ST230C..C
410 (165)
55 (85)
780
5700
5970
4800
5000
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
163
148
115
105
I
2
√t
Maximum I
2
√t
for fusing
1630
0.92
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Max. (typical) latching current
V
0.98
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.81
1.69
600
mA
1000 (300)
T
J
= 25°C, anode supply 12V resistive load
V
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 880A, T
J
= T
J
max, t
p
= 10ms sine pulse
0.88
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
t
q
Typical delay time
Typical turn-off time
ST230C..C
1000
1.0
Units Conditions
A/µs
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 300A, T
J
= T
J
max, di/dt = 20A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t
p
= 500µs
Gate drive 20V, 20Ω, t
r
1µs
100
2
www.irf.com
ST230C..C Series
Bulletin I25162 rev. D 04/03
Blocking
Parameter
dv/dt
I
DRM
I
RRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST230C..C
500
30
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST230C..C
10.0
2.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
TYP.
180
I
GT
DC gate current required
to trigger
90
40
2.9
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
1.8
1.2
V
5.0
MAX.
-
150
-
-
3.0
-
10
0.25
mA
V
V
mA
T
J
= T
J
max, t
p
5ms
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
J
= T
J
max
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
ST230C..C
-40 to 125
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units Conditions
°C
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
K/W
N
(Kg)
g
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
See Outline Table
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3
ST230C..C Series
Bulletin I25162 rev. D 04/03
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side
0.015
0.018
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
Single Side Double Side
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
T
J
= T
J
max.
K/W
Ordering Information Table
Device Code
ST
1
23
2
0
3
C
4
20
5
C
6
1
7
8
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
C = Puk Case TO-200AB (A-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/µsec (Standard selection)
L
= 1000V/µsec (Special selection)
4
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ST230C..C Series
Bulletin I25162 rev. D 04/03
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
42 (1.65) MAX.
28 (1.10)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
30
20
10
00
90
80
70
60
50
40
0
30˚
ST230C..C Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.17 K/W
30
20
10
00
90
80
70
60
50
40
30
20
0
100
30˚
ST230C..C Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.17 K/W
Conduction Angle
Conduction Period
60˚
90˚
120˚
180˚
60˚
90˚
120˚
180˚
DC
40 80 120 160 200 240 280 320
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
200
300
400
500
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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