ST230SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 230 A
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with ceramic insulator
COMPLIANT
(Also available with glass-metal seal up to 1200 V)
RoHS
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
TO-209AB (TO-93)
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
230 A
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
230
T
C
85
360
5700
5970
163
149
400 to 1600
100
- 40 to 125
UNITS
A
°C
A
A
kA
2
s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
ST230S
08
12
16
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1600
V
RSM
, MAXIMUM NON-REPETITIVE I
DRM
/I
RRM
MAXIMUM
PEAK VOLTAGE
AT T
J
= T
J
MAXIMUM
V
mA
500
900
1300
1700
30
Document Number: 94399
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST230SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 230 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 78 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
230
85
360
5700
5970
4800
Sinusoidal half wave,
initial T
J
= T
J
maximum
5000
163
148
115
105
1630
0.92
0.98
0.88
0.81
1.55
600
1000 (300)
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 720 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
≤
1 µs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs, gate 0 V 100
Ω,
t
p
= 500 µs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/µs
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94399
Revision: 11-Aug-08
ST230SPbF Series
Phase Control Thyristors
(Stud Version), 230 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with rated
V
DRM
anode to cathode applied
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
180
90
40
2.9
1.8
1.2
10
VALUES
TYP.
MAX.
UNITS
Vishay High Power Products
10.0
2.0
3.0
20
5.0
-
150
-
-
3.0
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.10
K/W
0.04
31
(275)
24.5
(210)
280
UNITS
°C
N·m
(lbf
⋅
in)
g
TO-209AB (TO-93)
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
Note
SINUSOIDAL CONDUCTION
0.016
0.019
0.025
0.036
0.060
RECTANGULAR CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Document Number: 94399
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST230SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 230 A
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Cas T
e emperature (°C)
130
S 230S S
T
eries
R
thJC
(DC) = 0.1 K/ W
120
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction Period
S
T230SS
eries
R
thJC
(DC) = 0.1 K/ W
110
Conduction Angle
100
90
30°
80
70
0
100
200
60°
100
90
60°
30°
80
0
50
100
150
200
250
Average On-state Current (A)
90°
120°
180°
90°
120°
180°
300
DC
400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
350
300
250
180°
120°
90°
60°
30°
RMSLimit
hS
R
t
0.
16
K/
W
1
0.
W
K/
A
=
08
0.
200
150
K/
0.3
W
K/
W
0.4
K/ W
0.5
K/ W
0.
2
W
K/
ta
el
-D
R
Conduction Angle
100
50
0
0
50
100
150
200
S 230S S
T
eries
T
J
= 125°C
K/ W
1.2 K
/W
0.8
250
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Pow er Loss (W)
450
400
350
300
250
200 RMSLimit
150
100
50
0
0
50 100 150 200 250 300 350 400
25
Conduction Period
DC
180°
120°
90°
60°
30°
R
0.
1
th
SA
=
08
0.
S
T230SS
eries
T = 125°C
J
K/
W
0.2
K/
W
0.3
K/ W
0.4
K/ W
0.5
K/ W
0.8 K/
W
0.
16
K/
W
W
K/
ta
el
-D
R
1.2 K/ W
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94399
Revision: 11-Aug-08
ST230SPbF Series
Phase Control Thyristors
(Stud Version), 230 A
Peak Half S Wave On-state Current (A)
ine
Peak Half S Wave On-state Current (A)
ine
Vishay High Power Products
5500
5000
4500
4000
3500
3000
2500
2000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
6000
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration. Control
5500
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
5000
No Voltage R
eapplied
Rated V
RRM
R
eapplied
4500
4000
3500
3000
2500
2000
0.01
S 230SS
T
eries
S 230S S
T
eries
10
100
0.1
Pulse T
rain Duration (s)
1
Number Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
1000
100
Tj = 25˚C
Tj = 125˚C
ST230S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.1 K/ W
(DC Operation)
0.1
0.01
S 230S S
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94399
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
