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ST280CH04C2LPBF

Silicon Controlled Rectifier, 1130A I(T)RMS, 500000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, APUK-2

器件类别:模拟混合信号IC    触发装置   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
BUTTON
包装说明
DISK BUTTON, O-MEDB-N2
针数
2
Reach Compliance Code
compliant
标称电路换相断开时间
100 µs
配置
SINGLE
最大直流栅极触发电流
150 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-200AB
JESD-30 代码
O-MEDB-N2
最大漏电流
75 mA
通态非重复峰值电流
6000 A
元件数量
1
端子数量
2
最大通态电流
500000 A
最高工作温度
150 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大均方根通态电流
1130 A
断态重复峰值电压
400 V
重复峰值反向电压
400 V
表面贴装
YES
端子面层
Nickel (Ni)
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
40
触发设备类型
SCR
文档预览
ST280CHPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 500 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
TO-200AB (A-PUK)
RoHS
COMPLIANT
• Extended temperature range
• Lead (Pb)-free
PRODUCT SUMMARY
I
T(AV)
500 A
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
500
T
hs
80
1130
I
T(RMS)
T
hs
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
Typical
25
7200
A
7500
260
230
400 to 600
100
- 40 to 150
V
µs
°C
kA
2
s
UNITS
A
°C
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
ST280CH..C
06
600
700
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
400
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
75
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 94401
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST280CHPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 500 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
500 (185)
80 (110)
1130
7200
7500
6000
Sinusoidal half wave,
initial T
J
= T
J
maximum
6300
260
235
180
165
2600
0.84
0.88
0.50
0.47
1.35
600
1000 (300)
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
1 µs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs, gate 0 V 100
Ω,
t
p
= 500 µs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
75
UNITS
V/µs
mA
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94401
Revision: 11-Aug-08
ST280CHPbF Series
Phase Control Thyristors
Vishay High Power Products
(Hockey PUK Version), 500 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 150 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 150 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180
90
30
2.9
1.8
1.0
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
150
-
-
3.0
-
W
A
V
mA
V
mA
0.30
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
, T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 150
0.17
0.08
0.033
0.017
4900
(500)
50
N
(kg)
g
K/W
UNITS
°C
R
thC-hs
TO-200AB (A-PUK)
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.016
0.019
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Document Number: 94401
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST280CHPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 500 A
150
140
150
140
130
120
110
100
90
80
70
60
50
40
30
20
Maximum Allowable
Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
Maximum Allowable
Heatsink Temperature (°C)
ST280CH..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
Ø
Ø
Conduction angle
30°
60°
90°
120°
180°
0
100
200
300
400
500
Conduction period
30°
60°
90°
120°
180°
DC
0
200
400
600
800
1000
1200
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
Maximum Allowable
Heatsink Temperature (°C)
Maximum Average
On-State Power Loss (W)
ST280CH..C Series
(Single side cooled)
R
thJ-hs
(DC) = 0.17 K/W
Ø
Conduction period
30°
60°
90°
120°
180°
0
100
200
300
400
500
600
DC
700
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
ST280CH..C Series
T
J
= 150 °C
0
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 5 - On-State Power Loss Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
20
Maximum Allowable
Heatsink Temperature (°C)
Maximum Average
On-State Power Loss (W)
ST280CH..C Series
(Double side cooled)
R
thJ-hs
(DC) = 0.08 K/W
1800
1600
1400
1200
1000
800
600
400
200
0
Ø
DC
180°
120°
90°
60°
30°
Conduction angle
RMS limit
30°
60°
90°
120°
180°
Ø
Conduction period
ST280CH..C Series
T
J
= 150 °C
0
200
400
600
800
1000
1200
0
100
200
300
400
500
600
700
800
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94401
Revision: 11-Aug-08
ST280CHPbF Series
Phase Control Thyristors
Vishay High Power Products
(Hockey PUK Version), 500 A
6500
6000
Peak Half Sine Wave
On-State Current (A)
5500
5000
4500
4000
3500
Peak Half Sine Wave
On-State Current (A)
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
ST280CH..C Series
3000
ST280CH..C Series
0.1
1
1
10
100
2500
0.01
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Instantaneous On-State Current (A)
10 000
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
T
J
= 150 °C
T
J
= 25 °C
1000
ST280CH..C Series
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
1
Z
thJ-hs
- Transient
Thermal Impedance (K/W)
Steady state value
R
thJ-hs
= 0.17 K/W
0.1
(Single side cooled)
R
thJ-hs
= 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST280CH..C Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Document Number: 94401
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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