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ST280CH06C3

Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM)

器件类别:模拟混合信号IC    触发装置   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Vishay(威世)
包装说明
,
Reach Compliance Code
unknown
标称电路换相断开时间
100 µs
关态电压最小值的临界上升速率
500 V/us
最大直流栅极触发电流
150 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
最大漏电流
75 mA
通态非重复峰值电流
6000 A
最大通态电压
1.35 V
最大通态电流
185000 A
最高工作温度
150 °C
最低工作温度
-40 °C
断态重复峰值电压
600 V
触发设备类型
SCR
文档预览
Bulletin I25160 rev. C 02/00
ST280CH..C SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
Extended temperature range
500A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
case style TO-200AB (A-PUK)
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
ST280CH..C
500
80
1130
25
7200
7500
260
230
400 to 600
100
- 40 to 150
Document Number: 93727
www.vishay.com
1
ST280CH..C Series
Bulletin I25160 rev. C 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
ST280CH..C
06
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
600
V
RSM
, maximum non-
repetitive peak voltage
V
500
700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
75
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
ST280CH..C
500 (185)
80 (110)
1130
7200
7500
6000
6300
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
√s
2
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
260
235
180
165
I
t
2
Maximum I
√t
for fusing
2
2600
0.84
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Max (typical) latching current
V
0.88
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.47
1.35
600
mA
1000 (300)
T
J
= 25° C, anode supply 12V resistive load
V
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I = 1000A, T
J
= T
J
max, t = 10ms sine pulse
pk
p
0.50
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST280CH..C
1000
1.0
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
1µs
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di /dt = 1A/µs
g
r
Typical delay time
Typical turn-off time
µs
t
q
100
V = 0.67% V
DRM
, T
J
= 25°C
d
I
TM
= 300A, T
J
= T
J
max, di/dt = 20A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
Document Number: 93727
www.vishay.com
2
ST280CH..C Series
Bulletin I25160 rev. C 02/00
Blocking
Parameter
dv/dt
I
DRM
I
RRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST280CH..C
500
75
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST280CH..C
10.0
2.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
I
GM
Max. peak positive gate current
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
TYP.
180
I
GT
DC gate current required
to trigger
90
30
2.9
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
1.8
1.0
V
5.0
MAX.
-
150
-
-
3.0
-
10
0.30
mA
V
V
mA
T
J
= T
J
max, t
5ms
p
T
J
= - 40°C
T
J
= 25°C
T
J
= 150°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 150°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
J
= T
J
max
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
ST280CH..C
-40 to 150
-40 to 150
0.17
0.08
0.033
0.017
4900
(500)
Units Conditions
°C
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
K/W
N
(Kg)
g
wt
Approximate weight
Case style
50
TO - 200AB (A-PUK)
See Outline Table
Document Number: 93727
www.vishay.com
3
ST280CH..C Series
Bulletin I25160 rev. C 02/00
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
Single Side Double Side
0.016
0.019
0.024
0.035
0.060
0.017
0.019
0.024
0.035
0.060
Rectangular conduction
Single Side Double Side
0.011
0.019
0.026
0.036
0.060
0.011
0.019
0.026
0.037
0.061
Units
Conditions
T
J
= T
J
max.
K/W
Ordering Information Table
Device Code
ST
1
28
2
0
3
CH
4
06
5
C
6
1
7
8
C
0 = Ceramic
3
Voltage code: Code
2
Thyristor Puk,
- = Essential gradeHighx 100 = V
1
H Converterpart numbertemperature
5
4
RRM
8
Critical dv/dt: TO-200AB
7
0 = Puk CaseNone (Gate and Auxiliary Cathode Unsoldered Leads)
-(See Voltage terminals = 500V/µsec
6
C = Eyelet Rating Table) (A-PUK)(Standard selection)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
L
= 1000V/µsec (Special selection)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
Document Number: 93727
www.vishay.com
4
ST280CH..C Series
Bulletin I25160 rev. C 02/00
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
42 (1.65) MAX.
28 (1.10)
Maximum Allowable Heatsink Temperature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
0
100
30˚
Maximum Allowable Heatsink Temperature (°C)
ST280CH..C Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.17 K/W
Conduction Angle
60˚
90˚
120˚
180˚
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
ST280CH..C Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.17 K/W
Conduction Period
30˚
60˚
90˚
120˚
180˚
DC
200
300
400
500
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Document Number: 93727
www.vishay.com
5
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参数对比
与ST280CH06C3相近的元器件有:ST280CH04C1L、ST280CH04C2L、ST280CH04C3、ST280CH06C0L、ST280CH06C1L、ST280CH06C2L、ST280CH06C2、ST280CH06C3L。描述及对比如下:
型号 ST280CH06C3 ST280CH04C1L ST280CH04C2L ST280CH04C3 ST280CH06C0L ST280CH06C1L ST280CH06C2L ST280CH06C2 ST280CH06C3L
描述 Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 400V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 400V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 400V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM) Silicon Controlled Rectifier, 185000mA I(T), 600V V(DRM)
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
标称电路换相断开时间 100 µs 100 µs 100 µs 100 µs 100 µs 100 µs 100 µs 100 µs 100 µs
关态电压最小值的临界上升速率 500 V/us 1000 V/us 1000 V/us 500 V/us 1000 V/us 1000 V/us 1000 V/us 500 V/us 1000 V/us
最大直流栅极触发电流 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA 150 mA
最大直流栅极触发电压 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
最大维持电流 600 mA 600 mA 600 mA 600 mA 600 mA 600 mA 600 mA 600 mA 600 mA
最大漏电流 75 mA 75 mA 75 mA 75 mA 75 mA 75 mA 75 mA 75 mA 75 mA
通态非重复峰值电流 6000 A 6000 A 6000 A 6000 A 6000 A 6000 A 6000 A 6000 A 6000 A
最大通态电压 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V 1.35 V
最大通态电流 185000 A 185000 A 185000 A 185000 A 185000 A 185000 A 185000 A 185000 A 185000 A
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
断态重复峰值电压 600 V 400 V 400 V 400 V 600 V 600 V 600 V 600 V 600 V
触发设备类型 SCR SCR SCR SCR SCR SCR SCR SCR SCR
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器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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