ST 2SC1923
NPN Silicon Epitaxial Planar Transistor
for high frequency amplifier applications
FM, RF, MIX, IF amplifier applications.
The transistor is subdivided into three groups, R, O
and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
S
Value
40
20
4
20
4
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
O
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC1923
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=6V, I
C
=1mA
Current Gain Group R
O
Y
Collector Cutoff Current
at V
CB
=18V
Emitter Cutoff Current
at V
EB
=4V
Reverse Transfer Capacitance
at V
CE
=6V, f=1MHz
Gain Bandwidth Product
at V
CE
=6V, I
C
=1mA
Collector-Base Time Constant
at V
CE
=6V, I
E
=-1mA, f=30MHz
Noise Figure
at V
CE
=6V, I
E
=-1mA, f=100MHz
Power Gain
at V
CE
=6V, I
E
=-1mA, f=100MHz
G
pe
15
18
-
dB
NF
-
2.5
4
dB
C
r.
r
bb’
-
-
30
ps
f
T
-
550
-
MHz
C
re
-
0.70
-
pF
I
EBO
-
-
0.5
μA
I
CBO
-
-
0.5
μA
h
FE
h
FE
h
FE
40
70
100
-
-
-
80
140
200
-
-
-
Min.
Typ.
Max.
Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC1923
0.01 F
INPUT
50
DUT
6pF
OUTPUT
50
15pF
2.2K
1000pF
0.01 F
L
1
1000pF
0.02 F
1K
0.02 F
-V
E
(I
E
=-1mA)
V
CC
L1:0.8mmφ SILVER PLATED COPPER WIRE, 4T,10ID,8 LENGTH
Fig. 1 NF, Gpe TEST CIRCUIT
PARAMETER(Typ.)
(1) COMMON EMITTER (V
CE
=6V,I
E
=-1mA, f=100MHz)
CHARACTERISTIC
Input Conductance
Input Capacitance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Output Conductance
Output Capacitance
SYMBOL
g
ie
C
ie
Iy
re
I
-Υ
re
Iy
fe
I
-Υ
fe
g
oe
C
oe
TYP.
2.9
10.2
0.33
90
40
20
45
1.1
UNIT
mS
pF
μS
o
mS
o
μS
pF
(2) COMMON BASE(V
CE
=6V,I
E
=-1mA,f=100MHz)
CHARACTERISTIC
Input Conductance
Input Capacitance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Output Conductance
Output Capacitance
SYMBOL
g
ib
-C
ib
Iy
rb
I
-Υ
rb
Iy
fb
I
Υ
fb
g
ob
C
ob
TYP.
34
10
0.27
105
34
165
45
1.1
UNIT
mS
pF
μS
o
mS
o
μS
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC1923
STATIC CHARACTERISTICS
COLLECTOR
CURRENT I
C
(mA)
h
FE
-I
C
300
COMMON EMITTER
V
CE
=6V
o
T
a
=25 C
20
16
12
8
4
DC CURRENT h
FE
V
CE
=6V
500
450
400
350
300
250
200
150
100
I
B
=50 A
100
50
30
0
600
200
400
BASE CURRENT
I
B
( A)
30
20
10
COLLECTOR
0.2
EMITTER VOLTAGE
V
CE
(V)
0.4
0
BASE EMITTER
VOLTAGE V
BE
(V)
10
0.1
0.3
0.5
1
3
5
10
20
0.6
V
CE
=6V
0.8
COMMON
EMITTER
Ta=25
o
C
COLLECTOR CURRENT I
C
(mA)
C
ie
,g
ie
-I
E
30
INPUT CAPACITANCE C
ie
(pF)
INPUT CONDUCTANCE g
ie
(mS)
C
ie
10
g
ie
5
3
COMMON EMITTER
V
CE
=6V
f=100MHz
T
a
=25
o
C
1
-0.2 -0.3
-0.5
-1
-3
-5
-10
EMITTER CURRENT I
E
(mA)
C
oe
,g
oe
-I
E
OUTPUT CONDUCTANCE g
oe
( S)
30
300
IY
re
I,
REVERSE TRANSFER ADMITTANCE
IYreI (mS)
3
re
-I
E
OUTPUT CAPACITANCE C
oe
(pF)
PHASE ANGLE OF REVERSE
TRANSFER ADMITTANCE re (
o
)
COMMON EMITTER
V
CE
=6V
f=100MHz
T
a
=25
o
C
100
g
oe
1
COMMON EMITTER
V
CE
=6V
f=100MHz
T
a
=25
o
C
10
0.5
5
3
50
30
IY
re
I
0.3
-300
-100
0.1
re
C
oe
10
1
-50
-0.2
-0.5
-1
-3
-5
-10
0.05
-0.2 -0.3
-0.5
-1
-3
-5
-10
EMITTER CURRENT I
E
(mA)
EMITTER CURRENT I
E
(mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
ST 2SC1923
IY
fe
I,
FORWARD TRANSFER ADMITTANCE
IY
fe
I (mS)
-100
100
fe
-I
E
-100
100
C
ib
,g
ib
-I
E
PHASE ANGLE OF FORWARD
TRANSFER ADMITTANCE fe (
o
)
INPUT CAPACITANCE C
ib
(pF)
-50
50
fe
30
-50
INPUT CONDUCTANCE g
ib
(mS)
IY
fe
I
50
g
ib
-30
-30
30
C
ib
-10
10
-5
5
-0.2 -0.3
-0.5
-1
COMMON EMITTER
V
CE
=6V
f=100MHz
T
a
=25
o
C
-3
-5
-10
-10
10
-5
5
-0.2 -0.3
-0.5
-1
COMMON BASE
V
CB
=6V
f=100MHz
T
a
=25
o
C
-3
-5
-10
EMITTER CURRENT I
E
(mA)
C
ob
,g
ob
-I
E
20
200
1000
EMITTER CURRENT I
E
(mA)
IY
fb
I,
FORWARD TRANSFER ADMITTANCE
IY
fb
I (mS)
PHASE ANGLE OF FORWARD
TRANSFER ADMITTANCE fb (
o
)
COMMON BASE
V
CB
=6V
f=100MHz
T
a
=25oC
fb
-I
E
OUTPUT CONDUCTANCE g
ob
( S)
OUTPUT CAPACITANCE C
ob
(pF)
g
ob
100
10
100
IY
fb
I
50
500
5
50
300
30
3
30
fb
C
ob
10
100
10
1
50
-0.2 -0.3
-0.5
-1
-3
-5
-10
5
-0.2 -0.3
-0.5
-1
COMMON BASE
V
CB
=6V
f=100MHz
T
a
=25
o
C
-3
-5
-10
EMITTER CURRENT I
E
(mA)
EMITTER CURRENT I
E
(mA)
IY
rb
I,
REVERSE TRANSFER ADMITTANCE
IY
rb
I (mS)
PHASE ANGLE OF REVERSE
TRANSFER ADMITTANCE rb (
o
)
-1000
1
fb
-I
E
20
C
ie
,g
ie
-V
CE
INPUT CAPACITANCE C
ie
(pF)
INPUT CONDUCTANCE g
ie
(mS)
C
ie
10
COMMON EMITTER
I
E
=-1mA
f=100MHz
T
a
=25
o
C
-500
0.5
-300
0.3
IY
rb
I
5
3
g
ie
rb
0.1
COMMON BASE
V
CB
=6V
f=100MHz
T
a
=25
o
C
-0.5
-1
-3
-5
-10
-100
-50
0.05
-0.2 -0.3
1
1
3
5
10
30
EMITTER CURRENT I
E
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/12/2002
