ST 2SC945
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups, R, O, Y,
P and L, according to its DC current gain. As
complementary type the PNP transistor ST 2SA733
is recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25℃)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
60
50
5
150
250
150
-55 to +150
Unit
V
V
V
mA
mW
O
O
C
C
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=6V, I
C
=1mA
Current Gain Group R
O
Y
P
L
Collector Base Breakdown Voltage
at I
C
=100μA
Collector Emitter Breakdown Voltage
at I
C
=10mA
Emitter Base Breakdown Voltage
at I
E
=10μA
Collector Cutoff Current
at V
CB
=40V
Emitter Cutoff Current
at V
EB
=3V
Collector Saturation Voltage
at I
C
=100mA, I
B
=10mA
Gain Bandwidth Product
at V
CE
=6V, I
C
=10mA
Output Capacitance
at V
CB
=6V, f=1MHz
Noise Figure
at V
CE
=6V, I
E
=0.5mA
at f=1KHz, R
S
=500Ω
NF
-
4
-
dB
C
OB
-
2.5
-
pF
f
T
-
300
-
MHz
V
CE(sat)
-
0.15
0.3
V
I
EBO
-
-
0.1
μA
I
CBO
-
-
0.1
μA
V
(BR)EBO
5
-
-
V
V
(BR)CEO
50
-
-
V
V
(BR)CBO
60
-
-
V
h
FE
h
FE
h
FE
h
FE
h
FE
40
70
120
200
350
-
-
-
-
-
80
140
240
400
700
-
-
-
-
-
Min.
Typ.
Max.
Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
Total power dissipation
vs. ambient temperature
300
Free air
Normalized collector cutoff current
vs. ambient temperature
10000
I
CBO(Ta)
Normalized collector cutoff current
I
CBO(Ta=25 C)
250
200
150
100
50
1000
P
tot (mW)
100
10
0
25
50
75
100
125
150
1
0
20
40
60
80
100 120 140
160
Tamb ( C)
Tamb ( C)
Collector current vs.
collector emitter voltage
Collector current vs.
collector emitter voltage
100
80
60
Ic - mA
1.0 0.9
0.8
0.7
0.6
0.5
0.4
10
8
6
Ic - mA
4.5
4
3.5
3
2.5
2
1.5
1
0.3
40
0.2
4
2
20
I
B
=0.1mA
0
0
0.4
0.8
1.2
1.6
2.0
0
0
IB=0.5 A
10
20
30
40
50
V
CE
, V
V
CE
, V
h
FE
- I
C
360
360
h
FE
- I
C
pulse
d
V
CE
=6V
pulsed
320
280
DC CURRENT GAIN
DC CURRENT GAIN
320
280
Ta=75 C
240
200
25 C
160
120
80
40
0
-25 C
240
V
CE
=6.0V
200
160
120
80
40
0
0.01
0.1
1
10
100
COLLECTOR CURRENT, mA
3.0V
2.0V
1.0V
0.5V
0.01
0.1
1
10
100
COLLECTOR CURRENT, mA
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
Collector current vs. base emitter voltage
100
V
CE
=6V
pulsed
Normalized h-parameters
vs. collector current
10
Hie
VCE=6V
f=1kHz
He=
he(Ic)
he(Ic=1mA)
Normalized h-parameters
10
C
Hre
Ic - mA
75
25 C
C
1
Ta=
-25
Hoe
1
Hfe
Hoe
Hfe
0.1
Hre
Hie
0.01
0.2
0.3
0.4
0.5
0.6
V
BE
, V
0.7
0.8
0.9
1
0.1
0.1
1
Ic ,
10
mA
C
ollector and base saturation
voltage vs. collector current
10
pulsed
10000
f
T
- I
E
VBE(sat) , V
VCE(sat) , V
1
VBE(sat)
IC/IB=10
1000
fT - MHz
VCE=10V
20 50
50
0.1
VCE(sat)
20
IC/IB=10
100
6V
2V
1V
0.01
0.1
1
10
Collector Current, mA
100
10
-0.1
-1
-10
Emitter Current, mA
-100
V
EB,
V
CB vs.
Cib, Cob
100
f=1MHz
Small signal current gain
vs. DC current gain
1000
Small signal current gain
VCE=6V
Ic=1mA
f=1kHz
Cib(Ic=0)
Cib, Cob - pF
800
600
400
200
10
Cob(IE=0)
1
0.1
0.1
1
10
100
0
200
400
600
800
1000
VEB, VCB - V
DC current gain
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
ST 2SC945
100
hoe - Output admittance ( s)
80
60
40
20
hre - Voltage feedback ratio (x10
-4
)
50
hie - Input impedance(k )
40
30
20
10
Input impedance, voltage feedback
ratio and output admittance vs.
small signal current gain
50
40
30
20
10
hoe
hre
hie
Normalized h-parameters vs.
collector emitter voltage
3
Normalized h- parameters
Ic=1mA
f=1kHz
he(VCE)
He= he(VCE=6V)
VCE=6V
Ic=1mA
f=1kHz
2
hoe
hre
hfe
hie
1
hfe
hie
hre hoe
0
0
0
200
400
600
800
1000
0
10
VCE - V
20
30
hfe - Small signal current gain
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/07/2004
