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ST300C12L1

Silicon Controlled Rectifier, 1115 A, 1200 V, SCR, TO-200AC, BPUK-2

器件类别:模拟混合信号IC    触发装置   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
是否无铅
含铅
厂商名称
Vishay(威世)
零件包装代码
BUTTON
包装说明
DISK BUTTON, O-MEDB-N2
针数
2
制造商包装代码
B-PUK
Reach Compliance Code
unknown
外壳连接
ISOLATED
标称电路换相断开时间
100 µs
配置
SINGLE
最大直流栅极触发电流
200 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-200AC
JESD-30 代码
O-MEDB-N2
最大漏电流
50 mA
通态非重复峰值电流
8000 A
元件数量
1
端子数量
2
最大通态电流
560000 A
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
1115 A
断态重复峰值电压
1200 V
重复峰值反向电压
1200 V
表面贴装
YES
端子形式
NO LEAD
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
文档预览
Bulletin I25193 rev. B 04/00
ST300C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
560A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
case style TO-200AC (B-PUK)
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
ST300C..L
560
55
1115
25
8000
8380
320
292
400 to 2000
100
- 40 to 125
www.irf.com
1
ST300C..L Series
Bulletin I25193 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
08
ST300C..L
12
16
18
20
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
1800
2000
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1700
1900
2100
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
50
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
ST300C..L
560 (275)
55 (75)
1115
8000
8380
6730
7040
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
320
292
226
207
I
2
t
Maximum I
2
√t
for fusing
3200
0.97
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
V
0.98
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.73
2.18
600
1000
mA
T
J
= 25°C, anode supply 12V resistive load
V
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 1635A, T
J
= T
J
max, t
p
= 10ms sine pulse
0.74
2
www.irf.com
ST300C..L Series
Bulletin I25193 rev. B 04/00
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST300C..L
1000
1.0
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
1µs
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
V = 0.67% V
DRM
, T
J
= 25°C
d
r
Typical delay time
Typical turn-off time
µs
t
q
100
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t
p
= 500µs
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST300C..L
500
50
Units Conditions
V/µs
mA
T
J
= T
J
max, linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
Maximum peak gate power
ST300C..L
10.0
2.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
5ms
p
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
TYP.
200
I
GT
DC gate current required
to trigger
100
50
2.5
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
1.8
1.1
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
5ms
p
V
5.0
MAX.
-
200
-
-
3.0
-
10.0
0.25
mA
V
V
mA
T
J
= T
J
max, t
p
5ms
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
J
= T
J
max
www.irf.com
3
ST300C..L Series
Bulletin I25193 rev. B 04/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
ST300C..L
-40 to 125
-40 to 150
0.11
0.05
0.011
0.006
9800
(1000)
Units
°C
Conditions
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
K/W
N
(Kg)
g
wt
Approximate weight
Case style
250
TO - 200AC (B-PUK)
See Outline Table
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
Single Side Double Side
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
Rectangular conduction
Single Side Double Side
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
Units
Conditions
T
J
= T
J
max.
K/W
Ordering Information Table
Device Code
ST
1
30
2
0
3
C
4
20
5
L
6
1
7
8
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
www.irf.com
ST300C..L Series
Bulletin I25193 rev. B 04/00
Outline Table
0.7 (0.03) MIN.
27 (1 .0 6 ) M AX .
34 (1.34) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20°± 5°
5 8. 5 (2 .3 ) D I A . M A X .
4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
30
0
100
30˚
Maximum Allowable Heatsink Temperature (°C)
ST300C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
130
120
110
100
90
80
70
60
50
40
30
20
0
30˚
60˚
90˚
120˚
180˚
DC
Conduction Period
ST300C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
Conduction Angle
60˚
90˚
120˚
180˚
200
300
400
500
100 200 300 400 500 600 700
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
www.irf.com
5
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