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ST300S08M0LPBF

Silicon Controlled Rectifier, 470A I(T)RMS, 300000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AE, TO-118, 3 PIN

器件类别:模拟混合信号IC    触发装置   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
TO-118
包装说明
POST/STUD MOUNT, O-MUPM-H3
针数
3
Reach Compliance Code
compliant
标称电路换相断开时间
100 µs
配置
SINGLE
关态电压最小值的临界上升速率
1000 V/us
最大直流栅极触发电流
200 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-209AE
JESD-30 代码
O-MUPM-H3
最大漏电流
50 mA
通态非重复峰值电流
8380 A
元件数量
1
端子数量
3
最大通态电流
300000 A
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大均方根通态电流
470 A
断态重复峰值电压
800 V
重复峰值反向电压
800 V
表面贴装
NO
端子面层
Nickel (Ni)
端子形式
HIGH CURRENT CABLE
端子位置
UPPER
处于峰值回流温度下的最长时间
40
触发设备类型
SCR
文档预览
ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
RoHS
COMPLIANT
• Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Lead (Pb)-free
• Designed and qualified for industrial level
TO-209AE (TO-118)
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
300 A
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
300
T
C
75
470
8000
8380
320
292
400 to 2000
100
- 40 to 125
kA
2
s
V
µs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
ST300S
12
16
18
20
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
I
DRM
/I
RRM
MAXIMUM
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE AT T
J
= T
J
MAXIMUM
AND OFF-STATE VOLTAGE
V
mA
V
400
800
1200
1600
1800
2000
500
900
1300
1700
1900
2100
50
Document Number: 94406
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
300
75
DC at 64 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
470
8000
8380
6730
Sinusoidal half wave,
initial T
J
= T
J
maximum
7040
320
292
226
207
3200
0.97
0.98
0.74
0.73
1.66
600
1000
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 940 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dIdt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
Ω,
t
r
1 µs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs, gate 0 V 100
Ω,
t
p
= 500 µs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/µs
mA
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
Revision: 11-Aug-08
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
100
50
2.5
1.8
1.1
10
VALUES
TYP.
MAX.
UNITS
Vishay High Power Products
10.0
2.0
3.0
20
5.0
-
200
-
-
3
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.10
0.03
48.5
(425)
535
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-209AE (TO-118)
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.011
0.013
0.017
0.025
0.041
RECTANGULAR CONDUCTION
0.008
0.014
0.018
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94406
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST300SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 300 A
Maximum Allowable Case T
emperature (°C)
120
110
S 300S S
T
eries
R
thJC
(DC) = 0.10 K/ W
Maximum Allowable Case T
emperature (°C)
130
130
120
110
100
90
80
70
60
0
100
S 300SS
T
eries
R
thJC
(DC) = 0.10 K/ W
Conduction Angle
Conduc tion Period
100
90
80
70
0
50
100
150
200
250
300
350
Average On-state Current (A)
30°
60°
90°
120°
180°
30°
60°
90°
120°
200
180°
DC
400
500
300
Average On-s
tate Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
480
440
400
360
320
280
180°
120°
90°
60°
30°
R Limit
MS
0.
08
0.
12
hS
R
t
K/
W
A
=
03
0.
K/
W
W
K/
el
-D
0.2
K/
W
ta
R
240
200
160
120
80
40
Conduc tion Angle
0.3
K/ W
0.4
K/ W
0. 6 K
/
W
S
T300SS
eries
T = 125°C
J
0
40
1.2 K/
W
0
25
80 120 160 200 240 280 320
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
650
600
550
500
450
400
350
300
RMSLimit
250
200
150
100
50
0
0
100
DC
180°
120°
90°
60°
30°
R
th
SA
=
03
0.
0.
08
W
K/
0.1
2
0.2
K/
W
el
-D
K/
W
K/ W
ta
R
Conduc tion Period
0.3
K/ W
S 300SS
T
eries
T = 125°C
J
200
300
400
0.6 K
/
W
1.2 K/ W
500
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94406
Revision: 11-Aug-08
ST300SPbF Series
Phase Control Thyristors
(Stud Version), 300 A
Pea k Half S Wave On-state Current (A)
ine
Peak Half S Wave On-state Current (A)
ine
Vishay High Power Products
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
8500
8000
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration. Control
7500 Of Conduction May Not Be Maintained.
Initial T = 125°C
J
7000
No Voltage Reapplied
Rated V
RRM
Reapplied
6500
6000
5500
5000
4500
4000
3500
3000
0.01
S 300S S
T
eries
0.1
Pulse T
rain Duration (s)
1
S 300S S
T
eries
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Ins
tantaneous On-state Current (A)
T
J
= 25°C
T = 125°C
J
1000
S 300S S
T
eries
100
0
1
2
3
4
5
6
7
8
9
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
rans
ient Therma l Impedanc e Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.10 K/ W
(DC Operation)
0.1
0.01
S 300S S
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94406
Revision: 11-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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