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ST300S12P3

PHASE CONTROL THYRISTORS

器件类别:模拟混合信号IC    触发装置   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
包装说明
POST/STUD MOUNT, O-MUPM-X2
Reach Compliance Code
compli
标称电路换相断开时间
100 µs
配置
SINGLE
最大直流栅极触发电流
200 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-209AE
JESD-30 代码
O-MUPM-X2
JESD-609代码
e0
最大漏电流
50 mA
通态非重复峰值电流
8000 A
元件数量
1
端子数量
2
最大通态电流
300000 A
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
470 A
重复峰值关态漏电流最大值
50000 µA
断态重复峰值电压
1200 V
重复峰值反向电压
1200 V
表面贴装
NO
端子面层
TIN LEAD
端子形式
UNSPECIFIED
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
文档预览
Bulletin I25158 rev. B 01/94
ST300S SERIES
PHASE CONTROL THYRISTORS
Stud Version
Features
Center amplifying gate
Hermetic metal case with ceramic insulator
International standard case TO-209AE (TO-118)
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
300A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
ST300S
300
75
470
8000
8380
320
292
400 to 2000
100
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
V
µs
°C
case style
TO-209AE (TO-118)
www.irf.com
1
ST300S Series
Bulletin I25158 rev. B 01/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
04
08
ST300S
12
16
18
20
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
1800
2000
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1700
1900
2100
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
50
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Case temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
ST300S
300
75
470
8000
8380
6730
7040
Units Conditions
A
°C
A
DC @ 64°C case temperature
t = 10ms
t = 8.3ms
A
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
√s
2
180° conduction, half sine wave
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
320
292
226
207
I
t
2
Maximum I
√t
for fusing
2
3200
0.97
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
r
t
2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
V
0.98
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.73
1.66
600
mA
1000
T
J
= 25°C, anode supply 12V resistive load
V
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 940A, T
J
= T
J
max, t
p
= 10ms sine pulse
0.74
2
www.irf.com
ST300S Series
Bulletin I25158 rev. B 01/94
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST300S
1000
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
1µs
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di /dt = 1A/µs
g
r
Typical delay time
1.0
µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t
p
= 500µs
t
q
Typical turn-off time
100
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST300S
500
50
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
Maximum peak gate power
ST300S
10.0
2.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
5ms
p
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
TYP.
I
GT
DC gate current required
to trigger
200
100
50
V
GT
DC gate voltage required
to trigger
2.5
1.8
1.1
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
5ms
p
V
5.0
MAX.
-
200
-
-
3
-
10.0
0.25
mA
V
V
mA
T
J
= T
J
max, t
5ms
p
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
J
= T
J
max
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3
ST300S Series
Bulletin I25158 rev. B 01/94
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST300S
-40 to 125
-40 to 150
0.10
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, ± 10%
DC operation
K/W
0.03
48.5
(425)
Nm
(lbf-in)
g
Mounting surface, smooth, flat and greased
Non lubricated threads
wt
Approximate weight
Case style
535
TO - 209AE (TO-118)
See Outline Table
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.011
0.013
0.017
0.025
0.041
0.008
0.014
0.018
0.026
0.042
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
30
2
0
3
S
4
20
5
P
6
0
7
8
1
2
3
4
5
6
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding Stud
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
P = Stud base 16UNF threads
M = Stud base metric threads (M24 x 1.5)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
8
-
Critical dv/dt: None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
4
www.irf.com
ST300S Series
Bulletin I25158 rev. B 01/94
Outline Table
CERAMIC HOUSING
22 (0.87) MAX.
4.3 (0.17) DIA.
4.5 (0.18) MAX.
7)
MI
N.
9 .5
(0 .
3
WHITE GATE
10.5 (0.41)
NOM.
RED SILICON RUBBER
RED CATHODE
38 (1.50)
MAX. DIA.
255 (10.04)
245 (9.65)
245 (9.65) ± 10 (0.39)
FLEXIBLE LEAD
C.S. 50mm 2
(0.078 s.i.)
22
(
0.8
6)
WHITE SHRINK
RED SHRINK
27.5 (1.08)
MAX.
SW 45
3/4"16 UNF-2A
49 (1.92) MAX.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
21 (0.82) MAX .
47 (1.85)
MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
CERAMIC HOUSING
17 (0.67) DIA.
3/8"-24UNF-2A
25 (0.98)
MI N
.
Fast-on Terminals
AMP. 280000-1
REF-250
38 (1.5)
77.5 (3.05)
80.5 (3.17)
DIA. MAX.
47 (1.85)
21 (0.83)
All dimensions in millimeters (inches)
27.5 (1.08)
MAX.
SW 45
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
MAX.
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
MAX.
www.irf.com
5
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