ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
515 A
TO-200AC (B-PUK)
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
International standard case TO-200AC (B-PUK)
High surge current capability
Low thermal impedance
High speed performance
Lead (Pb)-free
Designed and qualified for industrial level
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
TYPICAL APPLICATIONS
•
•
•
•
Inverters
Choppers
Induction heating
All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
515
T
hs
55
995
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
25
7950
8320
316
289
400 to 1200
Range
10 to 30
- 40 to 125
UNITS
A
°C
A
°C
A
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
kA
2
s
V
µs
°C
Note
• t
q
= 10 to 20 µs for 400 to 800 V devices
t
q
= 15 to 30 µs for 1000 to 1200 V devices
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
ST303C..L
08
10
12
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1100
1300
50
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
1130
1010
680
230
50
V
DRM
50
40
10/0.47
950
820
530
140
1800
1850
1560
690
50
V
DRM
-
1540
1570
1300
510
5660
2830
1490
540
50
V
DRM
-
4990
2420
1220
390
V
A/µs
55
10/0.47
°C
Ω/µF
A
55
40
10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I
2
√t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
515 (190)
55 (85)
995
7950
8320
6690
Sinusoidal half wave,
initial T
J
= T
J
maximum
7000
316
289
224
204
3160
2.16
1.44
1.48
0.57
0.56
600
1000
mΩ
V
kA
2
√s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 1255 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω,
I
G
= 1 A
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94374
Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 515 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned on current
Typical delay time
minimum
Maximum turn-off
time
(1)
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5
Ω
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: See table in device code
VALUES
1000
0.83
10
30
µs
UNITS
A/µs
Note
(1)
t = 10 to 20 µs for 400 to 800 V devices; t = 15 to 30 µs for 1000 to 1200 V devices
q
q
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω
T
J
= T
J
maximum, t
p
≤
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
T
J
= T
J
maximum, rated V
DRM
applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.11
0.05
0.011
0.005
9800
(1000)
250
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AC (B-PUK)
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 515 A
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.012
0.014
0.018
0.026
0.045
DOUBLE SIDE
0.010
0.015
0.018
0.027
0.046
RECTANGULAR CONDUCTION
SINGLE SIDE
0.008
0.014
0.019
0.027
0.046
DOUBLE SIDE
0.008
0.014
0.019
0.028
0.046
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Maximum Allowable Heats Temp erature (°C)
ink
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
0
50
100
150
200
250
300
350
Average On-state Current (A)
30°
60°
90°
120°
180°
Conduction Angle
130
120
110
100
90
80
70
60
50
40
30
0
100
200
30°
S 303C..L S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.11 K/ W
S 303C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.05 K/ W
Conduc tion Angle
60°
90°
120°
180°
600
700
300
400
500
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
100
30°
Maximum Allowable Heatsink T
emperature (°C)
S 303C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.11 K/ W
130
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
S 303C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.05 K/ W
Conduction Period
Conduc tion Period
60°
90°
120°
180°
DC
400
600
800
1000 1200
60°
90°
120°
180°
200
300
400
DC
500
600
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94374
Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 515 A
Maximum Average On-state Power Loss (W)
Peak Half S Wave On-s
ine
tate Current (A)
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
100 200 300 400 500 600 700 800
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
8000
7500
Maximum Non Repetitive S
urge Current
Vers Pulse T
us
rain Duration. Control
Of Conduction May Not Be Maintained.
7000
Initial T = 125°C
J
No Voltage Reapplied
6500
Rated V
RRM
R
eapplied
6000
5500
5000
4500
4000
3500
S 303C..L S
T
eries
0.1
Pulse T
rain Duration (s)
1
S 303C..L S
T
eries
T = 125°C
J
3000
0.01
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
Maximum Average On-state Power Loss (W)
2600
2400
2200
2000
1800
1600
1400
DC
180°
120°
90°
60°
30°
1200 RMSLimit
1000
800
600
400
200
0
0
200
400
600
1000
T = 25°C
J
T = 125°C
J
Conduction Period
S 303C..L S
T
eries
T = 125°C
J
800
1000 1200
S 303C..L S
T
eries
100
0
1
2
3
4
5
6
7
8
Average On-state Current (A)
Instantaneous On-state Voltage (V)
Fig. 6 - On-state Power Loss Characteristics
T
rans
ient Thermal Impedance Z
thJ-hs
(K/ W)
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
10
100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 9 - On-state Voltage Drop Characteristics
1
Peak Half S Wave On-state Current (A)
ine
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
S
teady S
tate Value
R
thJ-hs
= 0.11 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.05 K/ W
(Double S Cooled)
ide
(DC Operation)
0.1
0.01
S 303C..L S
T
eries
0.001
0.001
S 303C..L S
T
eries
0.01
0.1
1
10
S
quare Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Document Number: 94374
Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
