Bulletin I25187 rev. A 05/94
ST333C..L SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
620A
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST333C..L
620
55
1230
25
11000
11500
605
553
400 to 800
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
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1
ST333C..L Series
Bulletin I25187 rev. A 05/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
04
ST333C..L
08
800
900
400
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
50
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
1430
1670
1080
530
50
V
DRM
50
40
I
TM
180
o
el
1250
1170
880
400
50
50
55
2340
2310
2090
1190
50
V
DRM
-
40
I
TM
100µs
1940
2010
1800
990
50
-
55
6310
3440
2040
990
50
V
DRM
-
40
I
TM
Units
5620
5030
1750
800
50
-
55
A
V
A/µs
°C
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST333C..L
620 (305)
55 (75)
1230
11000
11500
9250
9700
Units
A
°C
Conditions
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
t
Maximum
I
2
t
for fusing
605
553
428
391
KA
2
s
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
6050
KA
√s
2
t = 0.1 to 10ms, no voltage reapplied
2
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ST333C..L Series
Bulletin I25187 rev. A 05/94
On-state Conduction
Parameter
V
TM
Max. peak on-state voltage
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
ST333C..L Units
1.96
0.91
0.93
0.58
mΩ
0.58
600
1000
mA
V
Conditions
I
TM
= 1810A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
V
T(TO)1
Low level value of threshold
Low level value of forward
slope resistance
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST333C..L Units
1000
1.1
Min
10
Max
30
µs
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
Typical delay time
Max. turn-off time
t
q
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST333C..L
500
50
Units
V/µs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST333C..L Units
60
10
10
20
V
W
A
Conditions
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
T
J
= T
J
max, t
p
≤
5ms
5
200
3
20
0.25
mA
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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3
ST333C..L Series
Bulletin I25187 rev. A 05/94
Thermal and Mechanical Specification
Parameter
T
J
T
stg
ST333C..L
-40 to 125
-40 to 150
0.11
0.05
0.011
0.005
9800
(1000)
Units
°C
Conditions
Max. operating temperature range
Max. storage temperature range
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
K/W
wt
Approximate weight
Case style
250
TO - 200AC (B-PUK)
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction
Single Side Double Side
0.012
0.014
0.018
0.026
0.045
0.010
0.015
0.018
0.027
0.046
Single Side Double Side
0.008
0.014
0.019
0.027
0.046
0.008
0.014
0.019
0.028
0.046
Units
Conditions
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
33
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9
10
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- L = Puk Case TO-200AC (B-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
dv/dt - t
q
combinations available
50
DN
DM
DL
DP
DK
--
--
100
EN
EM
EL
EP
EK
--
--
200
--
FM *
FL *
FP
FK
FJ
--
400
--
--
HL
HP
HK
HJ
HH
dv/dt (V/µs)
20
10
CN
12
CM
15
CL
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
t
q
(µs)
18
CP
20
CK
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
25
--
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
30
--
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
*
Standard part number.
All other types available only on request.
4
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ST333C..L Series
Bulletin I25187 rev. A 05/94
Outline Table
0.7 (0.03) MIN.
27 (1.06) MAX.
34 (1.34) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20°± 5°
58.5 (2.3) DIA. MAX.
4.7 (0.18)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Maximum Allowable Heatsin k Temperature (°C)
130
120
110
100
90
80
70
60
50
40
30
0
100
200
300
400
500
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
30°
ST333C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
ST333C..L Series
(Single Side Cooled)
R
thJ-hs
(DC) = 0.11 K/W
Conduction Period
30°
60°
90°
120°
180°
60°
90°
120°
180°
DC
100 200 300 400 500 600 700 800
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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