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ST730C12L3PBF

Silicon Controlled Rectifier, 2000A I(T)RMS, 990000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AC, METAL, BPUK-4

器件类别:模拟混合信号IC    触发装置   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
BUTTON
包装说明
DISK BUTTON, O-MXDB-X4
针数
4
制造商包装代码
B-PUK
Reach Compliance Code
compliant
外壳连接
ISOLATED
标称电路换相断开时间
150 µs
配置
SINGLE
最大直流栅极触发电流
200 mA
最大直流栅极触发电压
3 V
最大维持电流
600 mA
JEDEC-95代码
TO-200AC
JESD-30 代码
O-MXDB-X4
最大漏电流
80 mA
通态非重复峰值电流
18700 A
元件数量
1
端子数量
4
最大通态电流
990000 A
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
最大均方根通态电流
2000 A
重复峰值关态漏电流最大值
80000 µA
断态重复峰值电压
1200 V
重复峰值反向电压
1200 V
表面贴装
YES
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
处于峰值回流温度下的最长时间
40
触发设备类型
SCR
文档预览
Bulletin I25191 rev. D 04/03
ST730C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
990A
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
case style TO-200AC (B-PUK)
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°C
ST730C..L
990
55
2000
25
17800
18700
1591
1452
800 to 2000
150
- 40 to 125
www.irf.com
1
ST730C..L Series
Bulletin I25191 rev. D 04/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
08
12
ST730C..L
14
16
18
20
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
800
1200
1400
1600
1800
2000
V
RSM
, maximum non-
repetitive peak voltage
V
900
1300
1500
1700
1900
2100
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
80
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one-cycle
non-repetitive surge current
ST730C..L
990 (375)
55 (85)
2000
17800
18700
15000
15700
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
KA
2
s
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
1591
1452
1125
1027
I
2
√t
Maximum I
2
√t
for fusing
15910
0.98
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
V
1.12
(I >
π
x I
T(AV)
),T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
mΩ
0.27
1.62
600
mA
1000
T
J
= 25°C, anode supply 12V resistive load
V
(I >
π
x I
T(AV)
),T
J
= T
J
max.
I
pk
= 2000A, T
J
= T
J
max, t
p
= 10ms sine pulse
0.32
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
t
q
Typical delay time
Typical turn-off time
ST730C..L
1000
1.0
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
r
1µs
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/µs
µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 750A, T
J
= T
J
max, di/dt = 60A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t
p
= 500µs
150
2
www.irf.com
ST730C..L Series
Bulletin I25191 rev. D 04/03
Blocking
Parameter
dv/dt
I
DRM
I
RRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST730C..L
500
80
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
I
GM
+V
GM
-V
GM
Maximum peak gate power
ST730C..L
10.0
2.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
p
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
TYP.
200
I
GT
DC gate current required
to trigger
100
50
2.5
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
1.8
1.1
V
5.0
MAX.
-
200
-
-
3.0
-
10
0.25
mA
V
V
mA
T
J
= T
J
max, t
p
5ms
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
J
= T
J
max
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
ST730C..L
-40 to 125
-40 to 150
0.073
0.031
0.011
0.006
14700
(1500)
Units Conditions
°C
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
K/W
N
(Kg)
g
wt
Approximate weight
Case style
255
TO - 200AC (B-PUK)
See Outline Table
www.irf.com
3
ST730C..L Series
Bulletin I25191 rev. D 04/03
∆R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Conduction angle
Single Side Double Side
180°
120°
90°
60°
30°
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.020
0.036
Single Side Double Side
0.006
0.010
0.015
0.021
0.036
0.006
0.011
0.015
0.021
0.036
K/W
T
J
= T
J
max.
Units
Conditions
Ordering Information Table
Device Code
ST
1
73
2
0
3
C
4
20
5
L
6
1
7
8
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Thyristor
Essential part number
0 = Converter grade
C = Ceramic Puk
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
L = Puk Case TO-200AC (B-PUK)
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/µsec (Standard selection)
L
= 1000V/µsec (Special selection)
4
www.irf.com
ST730C..L Series
Bulletin I25191 rev. D 04/03
Outline Table
0.7 (0.03) MIN.
27 (1.06) MAX.
34 (1.34) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
6.2 (0.24) MIN.
20°± 5°
58.5 (2.3) DIA. MAX.
4.7 (0.18)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
Maximum Allowa ble Heatsink Temperature (°C)
130
120
110
100
90
80
70
60
50
40
0
100
200
Maximum Allow able Heatsink T
emperat ure (°C)
S 730C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
130
120
110
100
90
80
70
60
50
40
30
20
0
200
30°
S 730C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
Conduction Angle
Conduc tion Period
30°
60°
90°
120°
180°
60°
90°
120°
180°
400
600
800
DC
1000 1200
300 400
500
600
700
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-s
tate Current (A)
Fig. 2 - Current Ratings Characteristics
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5
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