Bulletin I25239 10/06
ST733CLPbF SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
940A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST733C..L
940
55
1900
25
20000
20950
2000
1820
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
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ST733CLPbF Series
Bulletin I25239 10/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
04
ST733C..L
08
800
900
400
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
75
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
2200
2050
1370
500
50
V
DRM
50
40
I
TM
180
o
el
1900
1660
1070
370
50
50
55
3580
3600
2900
1220
50
V
DRM
-
40
I
TM
100μs
3100
3130
2450
980
50
-
55
6800
3750
2120
960
50
V
DRM
-
40
I
TM
Units
5920
3240
1780
770
50
-
55
V
A/μs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
cooled
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
20000
20950
16800
17600
I
2
t
Maximum I
2
t for fusing
2000
1820
1410
1290
I
2
√t
Maximum I
2
√t
for fusing
20000
KA
2
√s
KA s
2
ST733C..L
940 (350)
55 (85)
1900
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
t = 0.1 to 10ms, no voltage reapplied
2
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ST733CLPbF Series
Bulletin I25239 10/06
On-state Conduction
Parameter
V
TM
V
T(TO)1
Max. peak on-state voltage
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
ST733C..L
1.63
1.09
1.20
0.32
Units
Conditions
I
TM
= 1700A, T
J
= T
J
max, t = 10ms sine wave pulse
p
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
Low level value of forward
slope resistance
m
Ω
0.29
600
1000
mA
r
t
2
I
H
I
L
High level value of forward
slope resistance
Maximum holding current
Typical latching current
T
J
= 25°C, I
T
> 30A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, I
G
= 1A
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
t
d
ST733C..L
1000
1.5
Min
10
Max
20
Units
A/µs
Conditions
T
J
= T
J
max, V
DRM
= rated V
DRM
, I
TM
= 2 x di/dt
Gate pulse: 20V 20Ω, 10µs 0.5µs rise time
T
J
= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t = 1µs
p
Typical delay time
µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= T
J
max, I
TM
= 550A, commutating di/dt = -40A/µs
V
R
= 50V, t
p
= 500µs, dv/dt: see table in device code
t
q
Max. turn-off time
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST733C..L
500
75
Units
V/μs
mA
Conditions
T
J
= T
J
max. linear to 80% V
DRM
, higher value
available on request
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST733C..L
60
10
10
20
Units
W
A
Conditions
T
J
= T
J
max., f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
Max. peak positive gate current
Maximum peak positive
gate voltage
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
V
5
200
3
20
0.25
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= 25°C, V
A
= 12V, Ra = 6Ω
V
mA
V
T
J
= T
J
max, rated V
DRM
applied
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ST733CLPbF Series
Bulletin I25239 10/06
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
ST733C..L
-40 to 125
-40 to 150
0.073
0.031
0.011
0.005
14700
(1500)
Units Conditions
°C
DC operation single side cooled
K/W
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
N
(Kg)
g
See Outline Table
R
thJ-hs
Max. thermal resistance,
junction to heatsink
R
thC-hs
Max. thermal resistance,
case to heatsink
F
Mounting force, ± 10%
K/W
wt
Approximate weight
Case style
255
TO - 200AC (B-PUK)
ΔR
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction
0.009
0.011
0.014
0.020
0.036
0.009
0.011
0.014
0.021
0.036
Rectangular conduction
0.006
0.011
0.015
0.021
0.036
0.006
0.011
0.015
0.022
0.036
Units
Conditions
Single Side Double Side Single Side Double Side
K/W
T
J
= T
J
max.
Ordering Information Table
Device Code
ST
1
73
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9
10
P
11
1
- Thyristor
2
- Essential part number
3
- 3 = Fast turn off
4
- C = Ceramic Puk
5
- Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
- L = Puk Case TO-200AC (B-PUK)
7
- Reapplied dv/dt code (for t
q
test condition)
8
- t
q
code
9
- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
= 1000V/µsec (Special selection)
11
- P = Lead Free
dv/dt - t
q
combinations available
dv/dt (V/µs)
10
12
t
q
(µs)
15
18
20
20
CN
CM
CL
CP
CK
50
DN
DM
DL
DP
DK
100
EN
EM
EL
EP
EK
200
--
FM *
FL *
FP
FK
400
--
--
HL
HP
H
* Standard part number.
All other types available only on request.
4
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ST733CLPbF Series
Bulletin I25239 10/06
Outline Table
0.7 (0.03) MIN.
27 (1.06) MAX.
34 (1.34) DIA. MAX.
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20°± 5°
58.5 (2.3) DIA. MAX.
4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Maximum Allowable Heatsink T
emperature (°C)
Maximum Allowable Heatsink T
emp erature (°C)
130
120
110
100
90
80
70
60
50
40
0
100
200
30°
S 733C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
130
120
110
100
90
80
70
60
50
40
30
20
0
200
S 733C..L S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
Conduction Angle
Conduction Period
60°
90°
120°
180°
30°
60°
90°
120°
180°
DC
800
1000
300
400
500
600
700
400
600
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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