ST93C46A,46C,46T
ST93C47C,47T
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
DUAL ORGANIZATION: 64 x 16 or 128 x 8
BYTE/WORD and ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST93C46 version
– 3V to 5.5V for ST93C47 version
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ENHANCED ESD/LATCH UP
PERFORMANCE for ”C” VERSION
ST93C46A, ST93C46C, ST93C46T,
ST93C47C, ST93C47T are replaced by the
M93C46
DESCRIPTION
This specification covers a range of 1K bit serial
EEPROM products, the ST93C46A,46C,46T
specified at 5V±10% and the ST93C47C,47T
specified at 3V to 5.5V.
In the text, products are referred to as ST93C46.
The ST93C46 is a 1K bit Electrically Erasable
Programmable Memory (EEPROM) fabricated with
SGS-THOMSON’s High EnduranceSingle Polysili-
con CMOS technology. The memory is accessed
through a serial input (D) and output (Q).
Table 1. Signal Names
S
D
Q
C
ORG
V
CC
V
SS
Chip Select Input
Serial Data Input
Serial Data Output
Serial Clock
Organisation Select
Supply Voltage
Ground
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
VCC
D
C
S
ORG
ST93C46
ST93C47
Q
VSS
AI00871C
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/13
ST93C46A/46C/46T, ST93C47C/47T
Table 2. Absolute Maximum Ratings
(1)
Symbol
T
A
T
STG
T
LEAD
V
IO
V
CC
V
ESD
Electrostatic Discharge Voltage (Machine model)
(3)
Parameter
Ambient Operating Temperature
Storage Temperature
Lead Temperature, Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
Value
–40 to 125
–65 to 150
215
260
–0.3 to V
CC
+0.5
–0.3 to 6.5
(2)
Unit
°C
°C
°C
V
V
V
V
Input or Output Voltages (Q = V
OH
or Hi-Z)
Supply Voltage
Electrostatic Discharge Voltage (Human Body model)
ST93C46A,T
ST93C46C
ST93C46
2000
4000
500
Notes:
1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500
Ω).
3. EIAJ IC-121 (Condition C) (200pF, 0
Ω).
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST93C46
ST93C47
S
C
D
Q
1
2
3
4
8
7
6
5
AI00872C
ST93C46
ST93C47
VCC
DU
ORG
VSS
S
C
D
Q
1
2
3
4
8
7
6
5
AI00874C
VCC
DU
ORG
VSS
Warning:
DU = Don’t Use
Warning:
DU = Don’t Use
Figure 2C. SO, 90° Turn, Pin Connections
ST93C46T
ST93C47T
DU
VCC
S
C
1
2
3
4
8
7
6
5
AI00982B
DESCRIPTION
(cont’d)
The 1K bit memory is divided into either 128 x 8 bit
bytes or 64 x 16 bit words. The organization may
be selected by a signal on the ORG input. The
memory is accessed by a set of instructions which
includes Read a byte/word, Write a byte/word,
Erase a byte/word, Erase All and Write All.
A Read instruction loads the address of the first
byte/word to be read into an internal address
pointer. The data is then clocked out serially.
The address pointer is automatically incremented
after the data is output and, if the Chip Select input
(S) is held High, the ST93C46 can output a sequen-
tial stream of data bytes/words. In this way, the
memory can be read as a data stream from 8 to
1024 bits long, or continuously as the address
ORG
VSS
Q
D
Warning:
DU = Don’t Use
2/13
ST93C46A/46C/46T, ST93C47C/47T
AC MEASUREMENT CONDITIONS
Input Rise and Fall Times
Input Pulse Voltages
Input Timing Reference Voltages
Output Timing Reference Voltages
≤
20ns
0.4V to 2.4V
1V to 2.0V
0.8V to 2.0V
Figure 3. AC Testing Input Output Waveforms
2.4V
2V
1V
2.0V
0.8V
OUTPUT
AI00815
0.4V
INPUT
Note that Output Hi-Z is defined as the point where data
is no longer driven.
Table 3. Capacitance
(1)
(T
A
= 25
°C,
f = 1 MHz )
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Condition
V
IN
= 0V
V
OUT
= 0V
Min
Max
5
5
Unit
pF
pF
Note:
1. Sampled only, not 100% tested.
Table 4. DC Characteristics
(T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5V to 5.5V or 3V to 5.5V)
Symbol
I
LI
I
LO
I
CC
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (TTL Inputs)
Supply Current (CMOS Inputs)
I
CC1
V
IL
Supply Current (Standby)
Input Low Voltage (D, C, S)
Test Condition
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
,
Q in Hi-Z
S = V
IH
, f = 1 MHz
S = V
IH
, f = 1 MHz
S = V
SS
, C = V
SS
,
ORG = V
SS
or V
CC
V
CC
= 5V
±
10%
3V
≤
V
CC
≤
4.5V
Input High Voltage (D, C, S)
V
CC
= 5V
±
10%
3V
≤
V
CC
≤
4.5V
Output Low Voltage
I
OL
= 2.1mA
I
OL
= 10
µA
I
OH
= –400µA
I
OH
= –10µA
2.4
V
CC
– 0.2
–0.3
–0.3
2
0.8 V
CC
Min
Max
±2.5
±2.5
3
2
50
0.8
0.2 V
CC
V
CC
+ 1
V
CC
+ 1
0.4
0.2
Unit
µA
µA
mA
mA
µA
V
V
V
V
V
V
V
V
V
IH
V
OL
V
OH
Output High Voltage
3/13
ST93C46A/46C/46T, ST93C47C/47T
Table 5. AC Characteristics
(T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 4.5V to 5.5V or 3V to 5.5V)
Symbol
t
SHCH
t
CLSH
t
DVCH
t
CHDX
Alt
t
CSS
t
SKS
t
DIS
t
DIH
Parameter
Chip Select High to Clock High
Clock Low to Chip Select High
Input Valid to Clock High
Temp. Range: grade 1
Clock High to Input Transition
Temp. Range:
grades 3, 6
Test Condition
Min
50
100
100
100
200
500
500
0
250
Note 1
250
500
ST93C46A
ST93C46C, 47C
t
CHCL
t
CLCH
t
W
f
C
t
SKH
t
SKL
t
WP
f
SK
Clock High to Clock Low
Clock Low to Clock High
Erase/Write Cycle time
Clock Frequency
0
Note 2
Note 2
250
250
10
1
300
200
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
MHz
t
CHQL
t
CHQV
t
CLSL
t
SLCH
t
SLSH
t
SHQV
t
SLQZ
t
PD0
t
PD1
t
CSH
Clock High to Output Low
Clock High to Output Valid
Clock Low to Chip Select Low
Chip Select Low to Clock High
t
CS
t
SV
t
DF
Chip Select Low to Chip Select High
Chip Select High to Output Valid
Chip Select Low to Output Hi-Z
Notes:
1. Chip Select must be brought low for a minimum of 250 ns (t
SLSH
) between consecutive instruction cycles.
2. The Clock frequency specification calls for a minimum clock period of 1
µs,
therefore the sum of the timings t
CHCL
+ t
CLCH
must be greater or equal to 1
µs.
For example, if t
CHCL
is 250 ns, then t
CLCH
must be at least 750 ns.
Figure 4. Synchronous Timing, Start and Op-Code Input
tCLSH
C
tSHCH
S
tDVCH
D
START
OP CODE
tCHCL
tCLCH
tCHDX
OP CODE
START
OP CODE INPUT
AI01428
4/13
ST93C46A/46C/46T, ST93C47C/47T
Figure 5. Synchronous Timing, Read or Write
C
tCLSL
S
tDVCH
D
An
tCHQL
Q15/Q7
tCHDX
A0
tSLQZ
Q0
tCHQV
tSLSH
Hi-Z
Q
ADDRESS INPUT
DATA OUTPUT
AI00820C
tSLCH
C
tCLSL
S
tDVCH
D
An
tCHDX
A0/D0
tSHQV
Hi-Z
Q
BUSY
tW
ADDRESS/DATA INPUT
WRITE CYCLE
AI01429
tSLSH
tSLQZ
READY
DESCRIPTION
(cont’d)
counter automatically rolls over to ’00’ when the
highest address is reached.
Programming is internally self-timed (the external
clock signal on C input may be disconnected or left
running after the start of a Write cycle) and does
not require an erase cycle prior to the Write instruc-
tion. The Write instruction writes 8 or 16 bits at one
time into one of the 128 bytes or 64 words. After
the start of the programming cycle a Busy/Ready
signal is available on the Data output (Q) when
Chip Select (S) is High.
An internal feature of the ST93C46 provides
Power-on Data Protection by inhibiting any opera-
tion when the Supply is too low. The design of the
ST93C46 and the High Endurance CMOS technol-
ogy used for its fabrication give an Erase/Write
cycle Endurance of 1,000,000 cycles and a data
retention of 40 years.
The DU (Don’t Use) pin does not affect the function
of the memory and it is reserved for use by SGS-
THOMSON during test sequences.The pin may be
left unconnected or may be connected to V
CC
or
V
SS
. Direct connection of DU to V
SS
is recom-
mended for the lowest standby power consump-
tion.
5/13
模拟电子
