STB160NF3LL
N-channel 30V - 0.0028Ω - 160A - D
2
PAK
STripFET™ III Power MOSFET
General features
Type
STB160NF3LL
V
DSS
30V
R
DS(on)
<0.0033Ω
I
D
160A
(1)
1. Value limited by wire bonding
■
■
■
■
100% avalanche tested
Ultra low on-resistance
Logic level device
Low threshold drive
3
1
D
2
PAK
Description
The STB100NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable fot the most
demanding DC-DC converter applications where
high efficiency is to be achieved.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB160NF3LL
Marking
B160NF3LL
Package
D
2
PAK
Packaging
Tape & reel
June 2006
Rev 2
1/13
www.st.com
13
Contents
STB160NF3LL
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB160NF3LL
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D(1)
I
D(1)
I
DM(2)
P
tot
dv/dt
(3)
E
AS (4)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Peak diode recovery avalanche energy
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
Value
30
30
± 16
160
160
640
300
2
2
1.2
-55 to 175
°C
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I
SD
≤
160A, di/dt
≤
100A/µs, V
DD
=V(
BR)DSS
, T
j
≤
T
JMAX
4. Starting T
j
= 25 °C, I
D
= 30A, V
DD
= 15V
Table 2.
Rthj-case
Rthj-amb
T
J
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
(1)
0.5
62.5
300
°C/W
°C/W
°C
1. for t
≤
10sec. 1.6mm from case
3/13
Electrical characteristics
STB160NF3LL
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= 20V
V
DS
= 20V, T
C
= 125°C
V
GS
= ± 16V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 80A
V
GS
= 4.5V, I
D
= 80A
1
0.0028
0.0035
0.0033
0.0048
Min.
30
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V
,
I
D
= 80A
Min.
Typ.
110
5500
1700
300
50
350
150
130
80
30
45
110
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 15V, I
D
= 80A
R
G
= 4.7Ω V
GS
= 4.5V
(see
Figure 13)
V
DD
= 24V, I
D
= 160A,
V
GS
= 4.5V, R
G
= 4.7Ω
(see
Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/13
STB160NF3LL
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 160A, V
GS
= 0
100
250
6
Test conditions
Min.
Typ.
Max.
160
640
1.3
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
I
SD
= 160A, di/dt =
Reverse recovery time
100A/µs,
Reverse recovery charge
V
DD
= 20V, T
j
= 150°C
Reverse recovery current
(see
Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
嵌入式系统
