STI150N10F7,
STP150N10F7
N-channel 100 V, 0.0036
Ω
typ., 110 A, STripFET™ F7
Power MOSFETs in I
2
PAK and TO-220 packages
Datasheet
−
production data
Features
Order codes
STI150N10F7
TAB
V
DS
100 V
R
DS(on)max
0.0042
Ω
I
D
P
TOT
STP150N10F7
110 A 250 W
TAB
•
Among the lowest R
DS(on)
on the market
•
Excellent figure of merit (FoM)
3
12
3
1
2
•
Low Crss/Ciss ratio for EMI immunity
•
High avalanche ruggedness
I PAK
2
TO-220
Applications
•
Switching applications
Figure 1. Internal schematic diagram
Description
These N-channel Power MOSFETs utilize
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1. Device summary
Order codes
STI150N10F7
150N10F7
STP150N10F7
Marking
Package
I
2
PAK
TO-220
Packaging
Tube
August 2014
This is information on a product in full production.
DocID024552 Rev 4
1/15
www.st.com
Contents
STI150N10F7, STP150N10F7
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
DocID024552 Rev 4
STI150N10F7, STP150N10F7
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
D
I
DM (1)
P
TOT
E
AS(2)
T
J
T
stg
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Single pulse avalanche energy
Operating junction temperature
-55 to 175
Storage temperature
°C
Parameter
Value
100
±20
110
110
440
250
495
Unit
V
V
A
A
A
W
mJ
°C
1. Pulse width is limited by safe operating area
2. Starting T
j
=25 °C, I
D
=30 A, V
DD
=50 V
Table 3. Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
0.6
62.5
Unit
°C/W
°C/W
DocID024552 Rev 4
3/15
15
Electrical characteristics
STI150N10F7, STP150N10F7
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V
(BR)DSS
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current
Gate-body leakage
current
Test conditions
V
GS
= 0, I
D
= 250 µA
V
GS
= 0, V
DS
= 100 V
V
GS
= 0,
V
DS
= 100 V, T
C
=125 °C
V
DS
= 0, V
GS
= +20 V
2.5
Min.
100
1
100
100
4.5
0.0036 0.0042
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-
V
GS
= 10 V, I
D
= 55 A
resistance
Table 5. Dynamic
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
V
DD
= 50 V, I
D
= 110 A,
V
GS
= 10 V
(see
Figure 14)
-
-
-
Typ.
8115
1510
67
117
47
26
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
Table 6. Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50 V, I
D
= 55 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 13)
Test conditions
Min.
-
-
-
-
Typ.
33
57
72
33
Max.
-
-
-
-
Unit
ns
ns
ns
ns
4/15
DocID024552 Rev 4
STI150N10F7, STP150N10F7
Electrical characteristics
Table 7. Source drain diode
Symbol
I
SD
I
SDM (1)
V
SD (2)
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 110 A, V
GS
= 0
I
SD
= 110 A, di/dt = 100 A/µs
V
DD
= 80 V, T
J
=150 °C
(see
Figure 15)
Test conditions
Min.
-
-
-
-
-
-
70
165
4.7
Typ.
Max. Unit
110
440
1.2
A
A
V
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID024552 Rev 4
5/15
15
