®
STPS1L30M
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
(max)
FEATURES AND BENEFITS
■
■
■
■
■
■
1A
30 V
150°C
0.38 V
A
C
STmite
(DO216-AA)
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop for higher efficiency
and extented battery life
Low thermal resistance
Avalanche capability specified
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 3: Absolute Ratings
(limiting values)
Symbol
Parameter
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
RMS forward voltage
I
F(AV)
I
FSM
P
ARM
T
stg
T
j
dV/dt
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Table 2: Order Code
Part Number
STPS1L30M
Marking
1L3
Value
30
2
T
c
= 140°C
δ
= 0.5
10 ms sinusoidal
tp = 1µs Tj = 25°C
1
50
1200
-65 to + 150
150
10000
Unit
V
A
A
A
W
°C
°C
V/µs
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated V
R
, T
j
= 25°C)
1
dPtot
-
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink
dTj
Rth
(
j
–
a
)
September 2004
REV. 3
1/6
STPS1L30M
Table 4: Thermal Resistance
Symbol
R
th(j-c)
* Junction to case
R
th(j-l)
*
Junction to ambient
Parameter
Value
20
250
Unit
°C/W
°C/W
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
T
j
= 25°C
T
j
= 85°C
I
R
*
Reverse leakage current
T
j
= 25°C
T
j
= 85°C
T
j
= 25°C
T
j
= 85°C
T
j
= 25°C
V
F
*
Forward voltage drop
T
j
= 85°C
T
j
= 25°C
T
j
= 85°C
Pulse test:
* tp = 380 µs,
δ
< 2%
Min.
Typ
0.13
5.25
0.05
3.5
Max.
0.39
16.5
0.24
10.5
0.15
7
0.39
0.34
0.53
0.51
Unit
V
R
= V
RRM
V
R
= 20V
V
R
= 10V
mA
0.03
2.4
I
F
= 1A
I
F
= 3A
0.33
0.28
0.45
0.43
2
V
To evaluate the conduction losses use the following equation: P = 0.34 x I
F(AV)
+ 0.07 I
F (RMS)
Figure 1: Conduction losses versus average
current
P
F(AV)
(W)
0.50
0.45
0.40
0.35
0.30
0.25
δ
=1
δ
= 0.05
δ
= 0.1
δ
= 0.2
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
I
F(AV)
(A)
1.1
δ
= 0.5
R
th(j-a)
=R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
R
th(j-a)
=270°C/W
0.20
0.15
0.10
0.05
0.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
T
0.4
0.3
0.2
I
F(AV)
(A)
δ
=tp/T
1.0
1.1
1.2
tp
0.1
0.0
1.3
T
amb
(°C)
0
25
50
75
100
125
150
2/6
STPS1L30M
Figure 3: Normalized avalanche
derating versus pulse duration
P
ARM
(t
p
)
P
ARM
(1µs)
1
power
Figure 4: Normalized avalanche
derating versus junction temperature
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
power
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
I
M
(A)
22
20
18
16
14
12
10
8
6
T
C
=125°C
T
C
=75°C
T
C
=25°C
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
δ
= 0.2
δ
= 0.1
Single pulse
δ
= 0.5
4
2
0
I
M
t
0.2
0.1
T
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
t
p
(s)
1.E-03
1.E-02
1.E-03
0.0
1.E-04
δ
=tp/T
tp
1.E-01
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
I
R
(mA)
1.E+03
T
j
=150°C
Figure 8: Reverse leakage current versus
junction temperature (typical values)
I
R
(mA)
1.E+03
V
R
=30V
1.E+02
T
j
=125°C
1.E+02
1.E+01
T
j
=100°C
T
j
=75°C
1.E+01
1.E+00
T
j
=50°C
1.E+00
1.E-01
T
j
=25°C
1.E-01
V
R
(V)
1.E-02
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
T
j
(°C)
1.E-02
0
25
50
75
100
125
150
3/6
STPS1L30M
Figure 9: Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 10: Forward voltage drop versus
forward current
I
FM
(A)
2.0
1.8
1.6
1.4
1.2
T
j
=85°C
(typical values)
T
j
=85°C
(maximum values)
100
1.0
0.8
0.6
0.4
T
j
=25°C
(maximum values)
V
R
(V)
10
1
10
100
0.2
0.0
0.00
V
FM
(V)
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
R
th(j-a)
(°C/W)
250
200
150
100
50
S(mm²)
0
0
20
40
60
80
100
120
140
160
180
200
4/6
STPS1L30M
Figure 12: STmite Package Mechanical Data
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ.
A
0.85 1.00 1.15 0.033 0.039
A1 -0.05
0.05 -0.002
b
0.40
0.65 0.016
b2
0.70
1.00 0.027
c
0.10
0.25 0.004
D
1.75 1.90 2.05 0.069 0.007
E
1.75 1.90 2.05 0.069 0.007
H
3.60 3.75 3.90 0.142 0.148
L
0.50 0.63 0.80 0.020 0.025
L2
1.20 1.35 1.50 0.047 0.053
L3
0.50
0.019
ref
ref
R
0.07
0.003
R1
0.07
0.003
L3
D
b2
b
H
L2
L
R
E
C
A1
R1
0° to 6°
A
Max.
0.045
0.002
0.025
0.039
0.010
0.081
0.081
0.154
0.031
0.059
Figure 13: Foot Print Dimensions
(in millimeters)
1.82
1.38
2.03
1.10
0.75
0.50
0.71
Table 6: Ordering Information
Ordering type
STPS1L30M
Marking
1L3
Package
STmite
Weight
15.5 mg
Base qty
12000
Delivery mode
Tape & reel
Table 7: Revision History
Date
Jul-2003
13-Sep-2004
Revision
2A
3
Last update.
STmite package dimensions reference A1 change: from
blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.
Description of Changes
5/6
