STPS20L15
Low drop OR-ing power Schottky diode
Datasheet - production data
A
K
Description
K
K
K
Packaged in TO-220AC or D²PAK, this device is
especially intended for use as an OR-ing diode in
fault tolerant power supply equipments.
Table 1: Device summary
Symbol
Value
20 A
15 V
0.28 V
125 °C
K
A
A
A
NC
I
F(AV)
V
RRM
V
F
(typ.)
NC
TO-220AC
D²PAK
T
j
(max.)
Features
Very low forward voltage drop for less power
dissipation and reduced heatsink size
Reverse voltage suited to OR-ing of 3 V, 5 V
and 12 V rails
Avalanche capability specified
ECOPACK
®
2 compliant component for
D²PAK on demand
October 2016
DocID5512 Rev 4
1/12
www.st.com
This is information on a product in full production.
Characteristics
STPS20L15
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
j
Notes:
(1)
(dP
tot
/dT
j
)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
(1)
T
C
= 115 °C, DC
t
p
= 10 ms sinusoidal
t
p
= 10 µs, T
j
= 125 °C
Value
15
30
20
310
970
-65 to +150
125
Unit
V
A
A
A
W
°C
< (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
R
th(j-c)
Junction to case
Table 4: Static electrical characteristics
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 100 °C
T
j
= 25 °C
V
F
(1)
Forward voltage drop
T
j
= 125 °C
Notes:
(1)
Pulse
Parameter
Max. value
1.6
Unit
°C/W
Min.
-
-
-
-
-
Typ.
Max.
6
Unit
mA
V
R
= 15 V
I
F
= 19 A
I
F
= 40 A
I
F
= 19 A
I
F
= 40 A
200
500
0.41
0.52
0.28
0.42
0.33
0.50
V
test: t
p
= 380 µs, δ < 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.18 x I
F(AV)
+ 8.10
-3
x I
F2(RMS)
2/12
DocID5512 Rev 4
STPS20L15
Characteristics
1.1
Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
8
7
6
Figure 2: Average forward current versus ambient
temperature (δ = 1)
22
PF(AV)(W)
δ = 0.1
δ = 0.05
δ = 0.2
IF(AV)(A)
Rth(j-a) = Rth(j-c)
δ
= 0.5
δ
=1
20
18
16
14
12
Rth(j-a) = 35 °C/W
Rth(j-a) = 15 °C/W
5
4
3
10
8
2
1
0
0
2
4
6
8
IF(AV)(A)
10
12
14
16
δ
= tp/T
18
T
6
4
2
0
T
tp
20
22
δ = tp/T
tp
25
50
Tamb(°C)
75
100
125
0
Figure 3: Normalized avalanche power derating
versus pulse duration (T
j
= 125 °C)
1
P
ARM
(t p )
P
ARM
(10 µs)
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
1. 0
Zth(j-c)/Rth(j-c)
0. 8
0.1
0. 6
0. 4
δ = 0.5
0.01
δ = 0.2
T
tp(s)
0. 2
δ = 0.1
t
p
(µs)
0.001
Single pulse
1
10
100
1000
δ = tp/T
tp
0. 0
1. 0E -4
1. 0E -3
1. 0E -2
1. 0E -1
1. 0E +0
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
5E +2
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
5. 0
IR(mA)
T
j
= 100 °C
C(nF)
F = 1 MHz
Tj = 25 °C
1E +2
1E +1
1. 0
1E +0
T
j
= 25 °C
1E -1
0
2
4
6
VR(V)
8
10
12
14
16
VR(V)
0. 1
1
2
5
10
20
DocID5512 Rev 4
3/12
Characteristics
Figure 7: Forward voltage drop versus forward
current (typical values)
STPS20L15
Figure 8: Forward voltage drop versus forward
current (maximum values)
200
100
IF (A)
Tj = 100 °C
10
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VF (V)
1.6
1.8
Figure 9: Thermal resistance junction to ambient versus copper surface under tab for D²PAK
80
70
60
R
th(j-a)
(°C/W)
50
40
30
20
Epoxy printed board FR4, eCU= 35 µm
10
S
Cu
(cm²)
0
0
5
10
15
20
25
30
35
40
4/12
DocID5512 Rev 4
STPS20L15
Package
information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
Recommended torque value: 0.55 N·m (for TO-220AC)
Maximum torque value: 0.7 N·m (for TO-220AC)
DocID5512 Rev 4
5/12
